• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.45-50
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• 2008

The effects of electrolytes and additives on the electropolishing of 50 and $20{\mu}m$ diameter copper via were investigated to flatten 3D SiP through via. The termination time was determined with analysis of applied potential on anode and cathode to avoid excess electropolishing. Acetic acid played a role of accelerator and glycerol played a role of inhibitor in phosphoric acid electrolytes. The overplated copper on the through via was effectively electropolished in the phosphoric electrolytes with acetic acid and glycerol addition. The electropolishing was terminated at the point of abrupt change of applied potential to remove only overplated copper on the through via.

• Transactions of the Korean Society of Mechanical Engineers
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• v.13 no.4
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• pp.611-617
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• 1989

A jet cutting system is a new concept of cutting device wihch requires high pressure up to thousands of atmospheric pressure. The use of water as a cutting medium brings in many of working advantages such as no dust, no gas, and no thermal distortion. And an introduction of abrasives into the water jet flow increases signigicantly cutting abilities and improves cutting performance. Cutting with abrasive water jet involves many operating variables, including design of the cutting system. For efficient cutting, the operating parameters have to chosen properly. In spite of several attempts to develop the cutting model theoretically, all of the optimization of the operating parameters is based upon exerimental results of each jet cutting system. In this paper, the effect of the parameters was measured and analysed in terms of pressure, abrasive, and transverse rate of a workpiece. Most of all, sufficient feeding of abrasives is the most important factor for efficient cutting performance.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.5 s.98
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• pp.40-47
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• 1999

In CMP for semiconductor wafer films, the acceptable within-chip planarity, within-wafer and wafer-to-wafer nonuniformity could be achieved by conditioning. The role of conditioning is to remove continuously polishing residues from pad and to maintain the initial pad surface pores. To reach these requirements, the diamond grits disk has been considered as a conventional conditioner. However, we have investigated many defects as scratch on wafers out of diamond grits shedding, contaminations from bonding materials, and pad pore subsidences by over-conditioning. So, this paper studies the effect of ultrasonic vibration in CMP conditioning as a representative. The effect of ultrasonic vibration was certified through ILD, Metal CMP.

• Proceedings of the Optical Society of Korea Conference
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• 1999.08a
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• pp.112-113
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• 1999

• Journal of the Korean Society for Precision Engineering
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• v.17 no.1
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• pp.179-184
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• 2000

Chemical Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active and abrasive containing slurry. CMP process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves hydrodynamic behavior. The liquid slurry is trapped between the work piece and pad forming a hydrodynamic film. For the first step to understand material removal mechanism of the CMP process, the hydrodynamic analysis is done with semiconductor wafer. Three-dimensional Reynolds equation is applied to get pressure distribution of the slurry film. Shear stress distributions on the wafer surface are also analyzed

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.303-304
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• 2012

공업적으로 널리 사용되는 내식강의 전해연마는 주로 고농도의 인산염 전해액 기반에 황산과 질산 첨가된 용액에서 $70^{\circ}C$ 이상의 고온에서 행해지다 보니 폐액 처리와 작업 환경이 좋지 않아 기피 기술로 인식 되어 있다. 본 연구에서는 환경 친화적인 상온 공정을 개발 하고자 에틸렌 글리콜 용액에 여러 가지 첨가제를 첨가하여 그 효과를 살펴보고 최적 조성과 공정 조건을 확립 하고자 하였다. 틸렌 글리콜에 물과 질산 암모니움을 첨가하여 점도와 pH, 전류 전압 특성을 구하고 여기에 첨가제인 설파메이트와 암모니움 클로라이드 첨가량을 정하고 각각의 효과를 확인 하였다. 이러한 결과를 바탕으로 SUS 316 재질에 대한 최적 연마조건을 설정하기 위해 조도 변화, 광택도 및 표면 조직 변화와 전해연마기구를 비교 검토하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.129-131
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• 2008

태양전지에서 발생되는 전력을 이용하여 중금속 성분이 함유된 공장 폐수에서 중금속 성분을 전착 회수하는 내용의 연구 및 장치를 개발하였다. 공장 폐수는 316L강을 전해연마한 후 배출되는 용액을 사용하였으며, 양극은 백금도금된 티타늄망을, 음극은 순수 동판을 사용하여 전해에 의해 중금속 성분을 전착시켰다. 전해액 및 전착 금속에 대한 분석도 이루어졌다.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.8
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• pp.134-140
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• 2002

Chemical mechanical polishing of aluminum and photoresist using colloidal silica-based slurry was experimented. The effects of slurry pH, silica concentration, and oxidizer ($H_2O_2$) concentration on surface roughness and removal rate were studied. The optimum slurry conditions for reduction of micro-scratch were investigated. The optimum chemical mechanical polishing with the colloidal silica-based slurry was compared with conventional chemical mechanical polishing with alumina-based slurry. Chemical mechanical polishing of the aluminum with the colloidal silica-based slurry showed improved result but chemical mechanical polishing of the photoresist did not. The improved result was comparative with that of chemical mechanical polishing with filtered alumina-based slurry which one of desirable methods to reduce the micro-scratch.

• The Journal of Korean Academy of Prosthodontics
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• v.58 no.3
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• pp.207-216
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• 2020

Purpose: To compare the polishing characteristics and their influence on Candida albicans adhesion to the recently introduced polyetherketoneketone (PEKK) and the conventional polymethylmethacrylate (PMMA) denture resin material. Materials and methods: Specimens from PEKK (Group E) and PMMA (Group M) were made in dimensions of 8 mm in diameter and 2 mm in thickness. The specimens were further divided into sub-groups according to the extent of polishing (ER, MR: rough; EP, MP: polished, N = 12 each). The specimens were polished using polishing machine and SiC foil. ER and MR group specimens were polished with 600 grit SiC foil only. EP and MP groups were further polished with 800, 1,000, 1,200 grit SiC foils sequentially. To measure the surface roughness values (Sa) of specimens, atomic force microscope (AFM) was used and scanning electron microscope (SEM) observation under 1,000, and 20,000 magnifications was performed to investigate surface topography. The polished specimens were soaked in C. albicans suspension for 2 hours with shaking to promote adhesion. The attached C. albicans were detached from the surface with 10 times of pipetting. The suspension of detached C. albicans was performed by serial dilution to 10³ times, and the diluted suspensions were inoculated on Sabouraud dextrose agar plates using spread plate method. After incubating the plate for 48 hours, colony forming unit (CFU)/plate of C. albicans was counted. Statistical analysis was performed using one-way ANOVA and Tukey HSD test to confirm significant difference between the groups (α=.05). Results: Average Sa value was significantly higher in MR group compared to other groups (P<.05), meaning that additional polishing steps reduced surface roughness effectively only in the PMMA specimens. There was no significant difference in Sa values between MP and EP groups. In SEM images, PEKK specimens showed numerous spikes of abraded material protruding from the surface and this phenomenon was more significant in EP group. The mean CFU/plate value was the highest in EP group and this was significant when it was compared to MP group (P<.05) which was the lowest. Conclusion: Polishing PEKK using serial SiC abrasive foil may result in higher adhesion of C. albicans. In clinic, this should be considered carefully.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.539-539
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• 2008

본 논문에서는 투명전도박막의 균일한 표면특성을 확보하기 위해 광역평탄화 공정을 적용하여 투명전도 박막의 표면 거칠기를 연구하였으며 슬러리의 종류에 따른 박막의 연마특성을 연구하였다. 본 실험에서 사용된 ITO 박막은 RF Sputtering에 의해 제작되었고 하부 기판은 석영 Glass가 사용되었다. 광역평탄화를 위한 CMP 공정은 고분자 물질계열의 패드위에 슬러리입자를 공급하고 웨이퍼 캐리어에 하중을 가하며 웨이퍼의 표면을 연마하는 방법으로 가공물을 탄성패드에 누르면서 상대 운동시켜 가공물과 친화력이 우수한 부식액으로 화학적 제거를 함과 동시에 초미립자로 기계적 제거를 하는 것이다. ITO 박막의 평탄화를 위한 공정조건은 Polisher pressure 300 g/$cm^2$, 슬러리 유속 80 ml/min, 플레이튼속도 60 rpm으로 하였다. 위의 조건에 따라 공정을 진행 후 연마특성을 측정하였으며 이때 사용된 슬러리는 산화막에 사용되는 실리카슬러리와 금속연마용 슬러리인 EPL을 사용하였다. 연마율은 실리카 슬러리가 EPL슬러리에 비해 높음을 확인 하였다. CMP 공정에 의해 평탄화를 수행 할 경우 실리카슬러리와 EPL슬러리 모두 CMP전에 비해 돌출된 힐록들이 감소되었음을 알 수 있었다. 비균일도 특성은 모든 슬러리가 양호한 특성을 나타내었다. 평탄화된 박막의 표면과 거칠기 특성은 AFM(XE-200, PSIA Company) 을 이용하여 분석을 하였다.