Journal of the Korean Society for Precision Engineering (한국정밀공학회지)

Korean Society for Precision Engineering (한국정밀공학회)
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Hydrodynamic Pressure and Shear Stress in Chemical Mechanical Polishing

화학기계적연마 공정의 윤활역학적 압력 및 전단응력 분포 해석

  • 조철호 (한양대학교 대학원 정밀기계공학과) ;
  • 박상신 (영남대학교 기계공학) ;
  • 안유민 (한양대학교 기계공학과)
  • Published : 2000.01.01
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Abstract

Chemical Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active and abrasive containing slurry. CMP process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves hydrodynamic behavior. The liquid slurry is trapped between the work piece and pad forming a hydrodynamic film. For the first step to understand material removal mechanism of the CMP process, the hydrodynamic analysis is done with semiconductor wafer. Three-dimensional Reynolds equation is applied to get pressure distribution of the slurry film. Shear stress distributions on the wafer surface are also analyzed

Keywords

References

  1. 정해도, '화학기계적 폴리싱(CMP)에 의한 층간 절연막의 광역 평탄화에 관한 연구,' 한국정밀공학회지, 제13권, 제11호, pp.46-56, 1996
  2. 이응숙, 강재훈, 신영재, 황경현, 이후상, 안대균, 'CMP장치의 설계 및 제작,' 한국정밀공학회 춘계학술대회 논문집, pp. 951-954, 1998
  3. 박진구, 이상호, 김형균, 'CMP 공정 후의 오염 제어,' 한국정밀공학회 춘계학술대회논문집, pp. 959-962
  4. Bhushan, M., Rouse, R., and Lukens, J.E., 'Chemical-Mechanical Polishing in Semidirect Contact Mode,' J. Electrochem. Soc., Vol. 142, No. 11,pp.3845-3851,1995 https://doi.org/10.1149/1.2048422
  5. Wang, D., Lee, J., Holland, K., Bibbly, T., Beaudoin, S., and Cale, T., 'Von Mises Stress in Chemical-Mechanical Polishing Process,' J. Electrochem. Soc., Vol. 144, No. 3, pp. 1121-1127,1997
  6. Srinivasa-Murthy, C., Wang, D., Beaudoin, S.P., Bibby, T., Holland, K., and Cale, T.S., 'Stress Distribution in Chemical Mechanical Polising,' Thin Solid Films, Vol. 308-309, pp. 533-537,1997 https://doi.org/10.1016/S0040-6090(97)00433-1
  7. Runnel, S.R., Eyman, L.M., 'Tribo1ogy analysis of Chemical Mechanaical Polishing,' J.Electrochem. Soc., Vol. 141, No. 6, pp. 1698-1701, 1994 https://doi.org/10.1149/1.2054985
  8. Runnels, S.R., 'Feature-Scale Fluid-Based Erosion Modeling for Chemical Mechanical Polishing,' J. Electrochem. Soc., Vol. 141, No.7, pp. 1900-1904, 1994 https://doi.org/10.1149/1.2055024
  9. Tichy, J., Levert, J.A., Shan, L., and Danyluk, S., 'Contact Mechanics and Lubrication Hydrodynamics of Chemical Mechanical Polishing,' J. Electrochem. Soc., Vol. 146, No.4., pp. 1523-1528, 1999 https://doi.org/10.1149/1.1391798
  10. Pinkus, O. and Sternlicht, B., Theory of Hydrodynamic Lubrication, McGraw Hill, pp. 1-23, 1961
  11. 박상신, 조철호, 안유민, '화학기계적 연마 가공에서의 윤활 특성 해석,' 윤활학회지, Vol. 15, No. 1, pp. 90-97, 1999
  12. Morris, J.L., Computational Methods in Elementary Numerical Analysis, John Wiley & Sons, pp. 261-323, 1983
  13. Patrick, W.J., Guthrie, W.L., Standley, C.L., and Schiable, P.M., 'Application of Chemical Mechanical Polishing to Fabrication of VLSI Circuit Interconnections,' J. Electrochem. Soc., Vol. 138, No. 6, pp. 1778-1784, 1991 https://doi.org/10.1149/1.2085872
  14. Dejule, R. 'CMP Grows in Sophistication,' Semiconductor International, Vol. 21, No. 13, pp. 56-62,1998