• Title/Summary/Keyword: 아날로그 비교기

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A 10-bit 10-MS/s 0.18-㎛ CMOS Asynchronous SAR ADC with split-capacitor based differential DAC (분할-커패시터 기반의 차동 디지털-아날로그 변환기를 가진 10-bit 10-MS/s 0.18-㎛ CMOS 비동기 축차근사형 아날로그-디지털 변환기)

  • Jeong, Yeon-Ho;Jang, Young-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.2
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    • pp.414-422
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    • 2013
  • This paper describes a 10-bit 10-MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) using a split-capacitor-based differential digital-to-analog converter (DAC). SAR logic and comparator are asynchronously operated to increase the sampling frequency. The time-domain comparator with an offset calibration technique is used to achieve a high resolution. The proposed 10-bit 10-MS/s asynchronous SAR ADC with the area of $140{\times}420{\mu}m^2$ is fabricated using a 0.18-${\mu}m$ CMOS process. Its power consumption is 1.19 mW at 1.8 V supply. The measured SNDR is 49.95 dB for the analog input frequency of 101 kHz. The DNL and INL are +0.57/-0.67 and +1.73/-1.58, respectively.

Design of a Low power Analog-to-Digital Converter with 8bit 10MS/s (8비트 10MS/s 저전력 아날로그-디지털 변환기 설계)

  • 손주호;이근호;설남오;김동용
    • The Journal of the Acoustical Society of Korea
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    • v.17 no.7
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    • pp.74-78
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    • 1998
  • 본 논문에서는 고속의 변환속도를 갖는 파이프라인드 방식과 저전력 특성을 갖는 축차 비교 방식 구조를 혼용하여 고속, 저전력 아날로그-디지털 변환기를 설계하였다. 제안 된 구조는 축차 비교 방식의 변환에서 비교기를 파이프라인드 구조로 연결하여 홀드된 주기 에 비교기의 기준 전위를 전 비교기의 출력값에 의해 변환하도록 하여 고속 동작이 가능하 도록 하였다. 제안된 구조에 의해 8비트 아날로그 디지털 변환기를 0.8㎛ CMOS공정으로 HSPICE를 이용하여 시뮬레이션한 결과, INL/DNL은 각각 ±0.5/±1이었으며, 100kHz 사인 입력 신호를 10MS/s로 샘플링 하여 DFT측정 결과 SNR은 41dB를 얻을 수 있었다. 10MS/s의 변환 속도에서 전력 소모는 4.14mW로 측정되었다.

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A 10-bit 10-MS/s Asynchronous SAR analog-to-digital converter with digital-to-analog converter using MOM capacitor (MOM 커패시터를 사용한 디지털-아날로그 변환기를 가진 10-bit 10-MS/s 비동기 축차근사형 아날로그-디지털 변환기)

  • Jeong, Yeon-Ho;Jang, Young-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.1
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    • pp.129-134
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    • 2014
  • This paper presents a 10-bit 10-MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) which consists of a digital-to-analog converter (DAC), a SAR logic, and a comparator. The designed asynchronous SAR ADC with a rail-to-rail input range uses a binary weighted DAC using metal-oxide-metal (MOM) capacitor to improve sampling rate. The proposed 10-bit 10-MS/s asynchronous SAR ADC is fabricated using a 0.18-${\mu}m$ CMOS process and its active area is $0.103mm^2$. The power consumption is 0.37 mW when the voltage of supply is 1.1 V. The measured SNDR are 54.19 dB and 51.59 dB at the analog input frequency of 101.12 kHz and 5.12 MHz, respectively.

A Time-Domain Comparator for Micro-Powered Successive Approximation ADC (마이크로 전력의 축차근사형 아날로그-디지털 변환기를 위한 시간 도메인 비교기)

  • Eo, Ji-Hun;Kim, Sang-Hun;Jang, Young-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.6
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    • pp.1250-1259
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    • 2012
  • In this paper, a time-domain comparator is proposed for a successive approximation (SA) analog-to-digital converter (ADC) with a low power and high resolution. The proposed time-domain comparator consists of a voltage-controlled delay converter with a clock feed-through compensation circuit, a time amplifier, and binary phase detector. It has a small input capacitance and compensates the clock feed-through noise. To analyze the performance of the proposed time-domain comparator, two 1V 10-bit 200-kS/s SA ADCs with a different time-domain comparator are implemented by using 0.18-${\mu}m$ 1-poly 6-metal CMOS process. The measured SNDR of the implemented SA ADC is 56.27 dB for the analog input signal of 11.1 kHz, and the clock feed-through compensation circuit and time amplifier of the proposed time-domain comparator enhance the SNDR of about 6 dB. The power consumption and area of the implemented SA ADC are 10.39 ${\mu}W$ and 0.126 mm2, respectively.

Low-power Analog-to-Digital Converter for video signal processing (비디오 신호처리용 저전력 아날로그 디지털 변환기)

  • 조성익;손주호;김동용
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.24 no.8A
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    • pp.1259-1264
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    • 1999
  • In this paper, the High-speed, Low-power Analog-Digital Conversion Archecture is porposed using the Pipelined archecture for High-speed conversion rate and the Successive-Approximation archecture for Low-power consumption. This archecture is the Successive-Approximation archecture using Pipelined Comparator array to change reference voltage during Holding Time. The Analog-to-Digital Converter for video processing is designed using 0.8${\mu}{\textrm}{m}$ CMOS tchnology. When an 6-bit 10MS/s Analog-to-Digital Converter is simulatined, the INL/DNL errors are $\pm$0.5/$\pm$1, respectively. The SNR is 37dB at a sampling rate of 10MHz with 100KHz sine input signal. The power consumption is 1.46mW at 10MS/s. When an 8-bit 10MS/s Analog-to Digital Converter is simulatined, the INL/DNL errors are $\pm$0.5/$\pm$1, respectively. The SNR is 41dB at a sampling rate of 100MHz with 100KHz sine input signal. The power consumption is 4.14m W at 10MS/s.

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A 2.5V 0.25㎛ CMOS Temperature Sensor with 4-bit SA ADC (4-비트 축차근사형 아날로그-디지털 변환기를 내장한 2.5V 0.25㎛ CMOS 온도 센서)

  • Kim, Mungyu;Jang, Young-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.2
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    • pp.378-384
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    • 2013
  • In this paper, a CMOS temperature sensor is proposed to measure the internal temperature of a chip. The temperature sensor consists of a proportional-to-absolute-temperature (PTAT) circuit for a temperature sensing part and a 4-bit analog-to-digital converter (ADC) for a digital interface. The PTAT circuit with the compact area is designed by using a vertical PNP architecture in the CMOS process. To reduce sensitivity of temperature variation in the digital interface circuit of the proposed temperature sensor, a 4-bit successive approximation (SA) ADC using the minimum analog circuits is used. It uses a capacitor-based digital-to-analog converter and a time-domain comparator to minimize power consumption. The proposed temperature sensor was fabricated by using a $0.25{\mu}m$ 1-poly 6-metal CMOS process with a 2.5V supply, and its operating temperature range is from 50 to $150^{\circ}C$. The area and power consumption of the fabricated temperature sensor are $130{\times}390{\mu}m^2$ and $868{\mu}W$, respectively.

Analog-to-Digital Converter using Pipelined Comparator Array (파이프라인드식 비교기 배열을 이용한 아날로그 디지털 변환기)

  • Son, Ju-Ho;Jo, Seong-Ik;Kim, Dong-Yong
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.37 no.2
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    • pp.37-42
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    • 2000
  • In this paper, The high-speed, low-Power analog-to-digital conversion structure is proposed using the pipelined comparator away for high-speed conversion rate and the successive- approximation structure for low-power consumption. This structure is the successive-approximation structure using pipelined comparator array to change the reference voltage during the holding time. An 8-bit 10MS/s analog-to-digital converter is designed using 0.8${\mu}{\textrm}{m}$ CMOS technology. The INL/DNL errors are $\pm$0.5/$\pm$1, respectively. The SNR is 41㏈ at a sampling rate of 10MHz with 100KHz sine input signal. The Power consumption is 4.14㎽ at 10MS/s.

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DC-DC Boost Converter using Offset-Controlled Zero Current Sensor for Low Loss Thermoelectric Energy Harvesting Circuit (저 손실 열전변환 하베스팅을 위해 제로전류센서의 오프셋을 조절하는 부스트 컨버터)

  • Joo, Sunghwan;Kim, Kiryong;Jung, Dong-Hoon;Jung, Seong-Ook
    • Journal of IKEEE
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    • v.20 no.4
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    • pp.373-377
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    • 2016
  • This paper presents a low power boost converter using offset controlled Zero Current Sensor (ZCS) control for thermoelectric energy harvesting.[1] [5] Offset controlled ZCS uses adjustable pre-offset that is controled by 6bit code each connected gate of NMOS for switching. Offset controlled ZCS demonstrates an efficiency that is higher than using analog comparator ZCS and that is smaller area than using delay line ZCS. Experimentally, the offset controlled ZCS system consumes 10 times less power than analog comparator ZCS based system at similar performance.

A 10-bit 10-MS/s 0.18-um CMOS Asynchronous SAR ADC with Time-domain Comparator (시간-도메인 비교기를 이용하는 10-bit 10-MS/s 0.18-um CMOS 비동기 축차근사형 아날로그-디지털 변환기)

  • Jeong, Yeon-Hom;Jang, Young-Chan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.05a
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    • pp.88-90
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    • 2012
  • This paper describes a 10-bit 10-MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) with a rail-to-rail input range. The proposed SAR ADC consists of a capacitor digital-analog converter (DAC), a SAR logic and a comparator. To reduce the frequency of an external clock, the internal clock which is asynchronously generated by the SAR logic and the comparator is used. The time-domain comparator with a offset calibration technique is used to achieve a high resolution. To reduce the power consumption and area, a split capacitor-based differential DAC is used. The designed asynchronous SAR ADC is fabricated by using a 0.18 um CMOS process, and the active area is $420{\times}140{\mu}m^2$. It consumes the power of 0.818 mW with a 1.8 V supply and the FoM is 91.8 fJ/conversion-step.

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Design of 6-bit 800 Msample/s DSDA A/D Converter for HDD Read Channel (HDD 읽기 채널용 6-bit 800 Msample/s DSDA 아날로그/디지털 변환기의 설계)

  • Jeong, Dae-Yeong;Jeong, Gang-Min
    • The KIPS Transactions:PartA
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    • v.9A no.1
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    • pp.93-98
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    • 2002
  • This paper introduces the design of high-speed analog-to-digital converter (ADC) for hard disk drive (HDD) read channel applications. This circuit is bated on fast regenerative autozero comparator for high speed and low-error rate comparison operation, and Double Speed Dual ADC (DSDA) architecture for efficiently increasing the overall conversion speed of ADC. A new type of thermometer-to-binary decoder appropriate for the autozero architecture is employed for no glitch decoding, simplifying the conventional structure significantly. This ADC is designed for 6-bit resolution, 800 Msample/s maximum conversion rate, 390 mW power dissipation, one clock cycle latency in 0.65 m CMOS technology.