• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.9
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• pp.82-90
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• 2014

In this paper, a couple of 4-channel differential transimpedance amplifier arrays are realized in a standard 0.18um CMOS technology for the applications of linear LADAR(laser detection and ranging) systems. Each array targets 1.25-Gb/s operations, where the current-mode chip consists of current-mirror input stage, a single-to-differential amplifier, and an output buffer. The input stage exploits the local feedback current-mirror configuration for low input resistance and low noise characteristics. Measurements demonstrate that each channel achieves $69-dB{\Omega}$ transimpedance gain, 2.2-GHz bandwidth, 21.5-pA/sqrt(Hz) average noise current spectral density (corresponding to the optical sensitivity of -20.5-dBm), and the 4-channel total power dissipation of 147.6-mW from a single 1.8-V supply. The measured eye-diagrams confirms wide and clear eye-openings for 1.25-Gb/s operations. Meanwhile, the voltage-mode chip consists of inverter input stage for low noise characteristics, a single-to-differential amplifier, and an output buffer. Test chips reveal that each channel achieves $73-dB{\Omega}$ transimpedance gain, 1.1-GHz bandwidth, 13.2-pA/sqrt(Hz) average noise current spectral density (corresponding to the optical sensitivity of -22.8-dBm), and the 4-channel total power dissipation of 138.4-mW from a single 1.8-V supply. The measured eye-diagrams confirms wide and clear eye-openings for 1.25-Gb/s operations.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.1
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• pp.148-156
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• 2013

This paper suggests a multi-level and multi-output SMPS based on a shared digital logic controller through independently operating in each dedicated time periods. Although the shared architecture can be devised with small area and high efficiency, it has critical drawbacks that real-time control of each DPWM generators are impossible and its output voltage can be unstable. To solve these problems, a real-time current compensation scheme is proposed as a solution. A current consumption of the core block and entire block with four driver buffers was simulated about 4.9mA and 30mA at 10MHz switching frequency and 100MHz core operating frequency. Output voltage ripple was 11 mV at 3.3V output voltage. Over/undershoot voltage was 10mV/19.6mV at 3.3V output voltage. The noise performance was simulated at 800mA and 100KHz load regulation. Core circuit can be implemented small size in $700{\mu}m{\times}800{\mu}m$ area. For the verification of proposed circuit, the simulations were carried out with Dong-bu Hitek BCD $0.35{\mu}m$ technology.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.2
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• pp.47-53
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• 2015

The effects of electroless nickel immersion gold (ENIG) and organic solderability preservative (OSP) surface finishes on the in-situ intermetallics reaction and the electromigration (EM) reliability of Sn-3.0Ag-0.5Cu (SAC305) solder bump were systematically investigated. After as-bonded, $(Cu,Ni)_6Sn_5$ intermetallic compound (IMC) was formed at the interface of the ENIG surface finish at solder top side, while at the OSP surface finish at solder bottom side,$ Cu_6Sn_5$ and $Cu_3Sn$ IMCs were formed. Mean time to failure on SAC305 solder bump at $130^{\circ}C$ with a current density of $5.0{\times}10^3A/cm^2$ was 78.7 hrs. EM open failure was observed at bottom OSP surface finish by fast consumption of Cu atoms when electrons flow from bottom Cu substrate to solder. In-situ scanning electron microscope analysis showed that IMC growth rate of ENIG surface finish was much lower than that of the OSP surface finish. Therefore, EM reliability of ENIG surface finish was higher than that of OSP surface finish due to its superior barrier stability to IMC reaction.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.40 no.1
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• pp.19-29
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• 2003

This paper proposes a CMOS readout circuit for uncooled micro-bolometer arrays adopting a four-point step calibration technique. The proposed readout circuit employing an 11b analog-to-digital converter (ADC), a 7b digital-to-analog converter (DAC), and an automatic gain control circuit (AGC) extracts minute infrared (IR) signals from the large output signals of uncooled micro-bolometer arrays including DC bias currents, inter-pixel process variations, and self-heating effects. Die area and Power consumption of the ADC are minimized with merged-capacitor switching (MCS) technique adopted. The current mirror with high linearity is proposed at the output stage of the DAC to calibrate inter-pixel process variations and self-heating effects. The prototype is fabricated on a double-poly double-metal 1.2 um CMOS process and the measured power consumption is 110 ㎽ from a 4.5 V supply. The measured differential nonlinearity (DNL) and integrat nonlinearity (INL) of the 11b ADC show $\pm$0.9 LSB and $\pm$1.8 LSB, while the DNL and INL of the 7b DAC show $\pm$0.1 LSB and $\pm$0.1 LSB.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.11
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• pp.70-77
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• 2013

We suggest a low area and high efficiency switched-mode power supply (SMPS) with a pulse width modulation (PWM) generator based on a pseudo relaxation-oscillating technique. In the proposed circuit, the PWM duty ratio is determined by the voltage slope control of an internal capacitor according to amount of charging current in a PWM generator. Compared to conventional SMPSs, the proposed control method consists of a simple structure without the filter circuits needed for an analog-controlled SMPS or the digital compensator used by a digitally-controlled SMPS. The proposed circuit is able to operate at switching frequency of 1MHz~10MHz, as this frequency can be controlled from the selection of one of the internal capacitors in a PWM generator. The maximum current of the core circuit is 2.7 mA, and the total current of the entire circuit including output buffer driver is 15 mA at 10 MHz switching frequency. The proposed SMPS has a simulated maximum ripple voltage of 7mV. In this paper, to verify the operation of the proposed circuit, we performed simulation using Dongbu Hitek BCD $0.35{\mu}m$ technology and measured the proposed circuit.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.3
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• pp.60-68
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• 2008

This work describes a re-configurable 10MS/s to 100MS/s, low-power 10b two-step pipeline ADC operating at a power supply from 0.5V to 1.2V. MOS transistors with a low-threshold voltage are employed partially in the input sampling switches and differential pair of the SHA and MDAC for a proper signal swing margin at a 0.5V supply. The integrated adjustable current reference optimizes the static and dynamic performance of amplifiers at 10b accuracy with a wide range of supply voltages. A signal-isolated layout improves the capacitor mismatch of the MDAC while a switched-bias power-reduction technique reduces the power dissipation of comparators in the flash ADCs. The prototype ADC in a 0.13um CMOS process demonstrates the measured DNL and INL within 0.35LSB and 0.49LSB. The ADC with an active die area of $0.98mm^2$ shows a maximum SNDR and SFDR of 56.0dB and 69.6dB, respectively, and a power consumption of 19.2mW at a nominal condition of 0.8V and 60MS/s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.3
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• pp.77-85
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• 2008

This work proposes a 12b 130MS/s 108mW $1.8mm^2$ 0.18um CMOS ADC for high-quality video systems such as TFT-LCD displays and digital TVs requiring simultaneously high resolution, low power, and small size at high speed. The proposed ADC optimizes power consumption and chip area at the target resolution and sampling rate based on a three-step pipeline architecture. The input SHA with gate-bootstrapped sampling switches and a properly controlled trans-conductance ratio of two amplifier stages achieves a high gain and phase margin for 12b input accuracy at the Nyquist frequency. A signal-insensitive 3D-fully symmetric layout reduces a capacitor and device mismatch of two MDACs. The proposed supply- and temperature- insensitive current and voltage references are implemented on chip with a small number of transistors. The prototype ADC in a 0.18um 1P6M CMOS technology demonstrates a measured DNL and INL within 0.69LSB and 2.12LSB, respectively. The ADC shows a maximum SNDR of 53dB and 51dB and a maximum SFDR of 68dB and 66dB at 120MS/s and 130MS/s, respectively. The ADC with an active die area of $1.8mm^2$ consumes 108mW at 130MS/s and 1.8V.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.11 s.353
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• pp.175-184
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• 2006

In this paper, we describe a 900MHz CMOS RF transceiver using an ISM band for ZigBee applications. The architecture of the designed rx front-end, which consists of a low noise amplifier, a down-mixer, a programmable gain amplifier and a band pass filter. And the tx front-end, which consists of a band pass filter, a programmable gain amplifier, an up-mixer and a drive amplifier. A low-if topology is adapted for transceiver architecture, and the total current consumption is reduced by using a low power topology. Entire transceiver is verified by means of post-layout simulation and is implemented in 0.18um RF CMOS technology. The fabricated chip demonstrate the measured results of -92dBm minimum rx input level and 0dBm maximum tx output level. Entire power consumption is 32mW(@1.8VDD). Die area is $2.3mm{\times}2.5mm$ including ESD protection diode pads.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.2
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• pp.39-46
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• 2012

The newly designed sense amplifier in this paper has rail-to-rail input range achieving low power consumption. Reducing static power consumption generated due to DC path to ground is key element for low power consumption in this paper. The proposed sense amplifier performs power-saving operation using negative feedback circuit that controls the current flow with the newly added PMOS input terminal. As a simulation result, the proposed sense amplifier consumed about over 50 % efficiency of the average power consumed by the typical Rail-to-Rail sense amplifier.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.11
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• pp.95-100
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• 2007

A low power PRAM using a power-dependant data inversion (PDI) scheme is proposed. The PRAM consumes large write power because large write currents are required during long time. Also, the power consumptions for storing #1# and #0# are different. The PDI circuit compares the power consumptions to store the original data and its inverted data, and then it stores the less power consuming data. Although the PDI scheme needs an additional inversion bit per data, the maximum and average powers of the PDI can be under 50% and 37.5% of the conventional write scheme, respectively. The average power for storing 8bit data is under 41%, due to the inversion bit. The 1K-bit PRAM chip with 128$\times$8bits was implemented with a 0.8${\mu}m$ CMOS technology with a 0.5${\mu}m$ GST cell.