• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.383-386
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• 2000

The 0.6Ba(Zn$_{1}$3/Ta$_{2}$3/)O$_3$-0.4Ba(Co$_{1}$3/Nb$_{2}$3/)O$_3$ceramics were prepared by the conventional mixed oxide method. The structural properties of the 0.6BZT-0.4BCN ceramics with the sintering temperature were investigated by XRD, SEM. The 0.6BZT-0.4BCN ceramics had a complex-perovskite structure. Increasing the sintering temperature, the peak intensity of the superstructure reflection plane were increased and the density and ordering were increased. The density of the 0.6BZT-0.4BCN ceramics sintered at 1475$^{\circ}C$ was 6.455[g/cm$^3$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.422-425
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• 2001

The electrical properties of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-La$_2$O$_3$ based varistors were investigated with sintering temperature in the range of 1240~130$0^{\circ}C$. The varistors sintered at 1240~126$0^{\circ}C$ exhibited high density, which was 5.50~5.70 g/㎤ corresponding to 95.2~98.6% of theoretical density The varistor voltage was decreased in range of 718.47~108.00 V/mm with increasing sintering temperature. The varistors sintered at 1240~126$0^{\circ}C$ exhibited good electrical properties, in which the nonlinear exponent is in the range of 79.25~49.22 and leakage current is in the range of 0.26~1.00 $\mu$A. In particular, the varistor sintered at 1240\`c showed very excellent electrical properties, in which the nonlinear exponent is 79.25 and leakage current is 0.26 $\mu$A.A.A.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.137-142
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• 2000

The sintering and electrical properties of YMnO3 bulk ceramics were investigated with Y/Mn ratios(Mn rich ;0.80/1.20, 0.90/1.10, 0.95/1.05, and Y rich ; 1.00/1.00, 1.05/0.95, 1.10/0.90). The crystal structure of samples showed a hexagonal structure, and the sample of Y/Mn = 0.95/1.05 indicated higher c-axis oriented peak than other samples. In the case of Mn rich samples, the grain sizes were about 7.8${\mu}{\textrm}{m}$ and they showed 95% of theoretical density. Whereas, in the case of Y rich samples, the grain sizes were about 2.3${\mu}{\textrm}{m}$ and they showed 86%. The dielectric constant and dissipation factor of the Mn rich samples were smaller than those of the Y rich samples. The samples of Y/Mn = 0.90/1.10 showed the lowest a dissipation factor, and their dielectric constant, dissipation factor and Curie temperature were 36, 0.0136 and 68$0^{\circ}C$, respectively.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.674-681
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• 1997

Ternary compound ceramics, (1-y-x) BaTiO$_3$-y SrTiO$_3$-x MgTiO$_3$(0.00 x 0.20), were fabricated by the conventional ceramic process. The structural and dielectric properties of specimens were investigated while varying the composition and sintering temperature(1,200~1,45$0^{\circ}C$) in order to obtain the optimum condition of capacitor. As is well known, Curie temperature(T$_{c}$) of high dielectric-based ceramic(BaTiO$_3$) was shifted and temperature of capacitance was decreased in according to increase of solid solution with (Sr, Mg)TiO$_3$. As a result, a suitable condition of compound rate for capacitor was obtained such as the BSM-11(0.8BaTiO$_3$-0.1SrTiO$_3$-0.1MgTiO$_3$), and sintering temperature was sintered at 1,25$0^{\circ}C$ for two hours. In this case, dielectric constant<1,300, dielectric loss(tan$\delta$)<0.03, and the variation rate of capacitance had less than 3% in the range -10~7$0^{\circ}C$.>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.219-222
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• 2003

$0.2(PbMg_{1/3}Nb_{2/3}O_3)-0.8(PbZr_{0.475}Ti_{0.525}O_3)$ 조성을 이용하여 $5{\times}5{\times}5mm^3$의 적층형 세라믹 액츄에이터 소자를 tape casting 방법으로 제작하였다. 전극재로서는 Ag-Pd를 이용하여 총 50층의 layer를 적층하였으며, 적층된 액츄에이터를 $1100^{\circ}C$의 온도에서 소결하였다. X-ray diffractometer를 이용하여 제작된 소자와 열화된 소자의 구조적인 특성을 분석하였다. 제작된 소자의 열화 특성을 알아보기 위하여 60 Hz 의 triangular wave를 인가하여 열화전과 후의 p-E hystcresis loop의 변화를 살펴보았으며, 인가된 전압의 변화에 따라서 소자에서 발생되는 양의 열을 측정하였다. 파괴된 소자의 파단면에 대한 SEM 분석을 통하여 소자의 파괴 메카니즘을 알아보도록 하였다. 이로부터 전기적 기계적 열화가 소자의 동작에 미치는 영향에 대해서 알아 보았다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.245-248
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• 2003

저온동시소성 세라믹으로 제작된 모듈을 고주파 대역에 적용할 경우 dimension의 오차는 모듈 특성의 오차를 유발시킨다. Constrained sintering 기술은 XY 방향의 수축을 억제시킴으로써 세라믹 소결체의 dimensional tolerance를 향상시키기 위하여 개발된 기술이다. LTCC의 소성온도에서는 수축하지 않는 비소성층을 LTCC 적층체의 위 아래에 함께 적층시킴으로써 XY 방향의 수축은 기계적으로 억제되며, 두께 방향으로만 수축이 일어난다. 본 연구에서는 LTCC 기판을 constrained sintering 방법으로 소성하고, 그 특성값을 일반적인 소성방법으로 제작하였을 때와 비교하였다. 알루미나 테잎의 제조조건 빛 적층조건을 변화시켜 이에 따른 면수축 제어 특성의 변화를 고찰하였다. 실험결과 알루미나 테잎의 고형분 용량과 부착층의 두께가 면수축 제어를 위하여 고려되어야할 주요 인자임을 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.249-252
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• 2003

The microwave dielectric properties of $0.7Mg_4Ta_2O_9-0.3TiO_2$ ceramics were investigated. All samples were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by X-ray Diffractor meter. According to. the X-ray diffraction patterns of the $0.7Mg_4Ta_2O_9-0.3TiO_2$ ceramics, major phase of the hexagonal $Mg_4Ta_2O_9$ were appeared. In the case of $0.7Mg_4Ta_2O_9-0.3TiO_2$ ceramics sintered at $1400^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 11.72, 126,419GHz, $-31.82ppm/^{\circ}C$, respectively.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.238-239
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• 2007

In this study, the structural and microwave dielectric properties of the $Ba_{5}Nb_{4}O_{15}$ cation-deficient perovskite ceramics with sintering temperature were investigated. All sample of the $Ba_{5}Nb_{4}O_{15}$ ceramics were prepared by the conventional mixed oxide method and sintered at $1325^{\circ}C{\sim}1500^{\circ}C$. The bulk density, dielectric constant and quality factor of the $Ba_{5}Nb_{4}O_{15}$ ceramics were increased in the range of $1325^{\circ}C{\sim}1400^{\circ}C$ and decreased above the sintering temperature of 1400$^{\circ}C$. In the case of the $Ba_{5}Nb_{4}O_{15}$ ceramics sintered at 1400$^{\circ}C$ for 5h, the dielectric constant, quality factor and temperature coefficient of the resonant frequency (TCRF) were 39.55, 28,052GHz, 5.7ppm/$^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.18-25
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• 1998

G $d_{0.2}$C $e_{0.8}$ $O_{1.9}$(CGO) for electrolyte and L $a_{0.5}$S $r_{0.5}$Mn $O_3$(LSM50) for cathode in Solid Oxide Fuel Cells(SOFC) were synthesized by citrate process. Specimens were prepared with sintering temperatures at 110$0^{\circ}C$, 120$0^{\circ}C$ and 130$0^{\circ}C$, which were fabricated by slurry coating with citric acid contents. Interfacial resistance was measured between cathode and electrolyte using AC-impedance analyzer. With various citric acid content, the degree of agglomeration for the initial particles changed. Also sintering temperature changed the particle size and the degree of densification of cathode. Factors affecting the interfacial resistance were adherent degree of the electrolyte and cathode, distribution of TPB(three phase boundaries, TPB i.e., electrolyte/electrode/gas phase area) and porosity of cathode. By increasing the sintering temperature, particle size and densification of the cathode were increased. And then, TPB area which occurs catalytic reaction was reduced and so interfacial resistance was increased.sed.sed.d.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1167-1173
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• 2004

This paper reports the variations of varistor voltage, nonlinear exponent, leakage current, and dissipation factor against surge stress of ZnO-P $r_{6}$ $O_{11}$-CoO-C $r_2$ $O_3$-E $r_2$ $O_3$(ZPCCE)-based varistors manufactured with the variations of sintering temperature. It was found that the variations of electrical parameters against surge stressing current of 100 A/$\textrm{cm}^2$(8x20 ${\mu}\textrm{s}$) is not so large under the surge stress of 700 times. Among varistors, specially the varistor sintered at 134$0^{\circ}C$ exhibited the smallest variations, with %$\Delta$ $V_{lmA}$=+0.23%, %$\Delta$$\alpha$=+0.23%, %$\Delta$ $I_{L}$=0%, %$\Delta$tan$\delta$=-6.94%. The clamping voltage ratio( $V_{c}$/ $V_{lmA}$) of all varistors was less than 2.2.2.2.2.2.2.