Sintering and Dielectric of $YMnO_3$ Ceramics with the Effect of Y/Mn Ratio

Y/Mn의 혼합비에 따른 $YMnO_3$세라믹의 소결 및 유전특성

  • 김재윤 (부경대학교 전자공학과) ;
  • 김부근 (부경대학교 전자공학과) ;
  • 김강언 (부경대학교 전자공학과) ;
  • 정수태 (부경대학교 전자공학과) ;
  • 조상희 (경북대학교 무기재료공학과)
  • Published : 2000.02.01

Abstract

The sintering and electrical properties of YMnO3 bulk ceramics were investigated with Y/Mn ratios(Mn rich ;0.80/1.20, 0.90/1.10, 0.95/1.05, and Y rich ; 1.00/1.00, 1.05/0.95, 1.10/0.90). The crystal structure of samples showed a hexagonal structure, and the sample of Y/Mn = 0.95/1.05 indicated higher c-axis oriented peak than other samples. In the case of Mn rich samples, the grain sizes were about 7.8${\mu}{\textrm}{m}$ and they showed 95% of theoretical density. Whereas, in the case of Y rich samples, the grain sizes were about 2.3${\mu}{\textrm}{m}$ and they showed 86%. The dielectric constant and dissipation factor of the Mn rich samples were smaller than those of the Y rich samples. The samples of Y/Mn = 0.90/1.10 showed the lowest a dissipation factor, and their dielectric constant, dissipation factor and Curie temperature were 36, 0.0136 and 68$0^{\circ}C$, respectively.

Keywords

References

  1. J. Solid State Chem. no.129 Synthesis of Metastable Perovskite type YMnO₃and HoMnO₃ H. W. Brinks;H. Fjellvag;A. Kjekshus
  2. Ceramic Materials for Electronics R. C. Buchanan
  3. Appl. phys. Lett. v.69 no.7 Epitaxially grown YMnO₃film : New candidate for nonvolatiile memory devices N. Fujimura;T. Ishida;T. Yoshimura;T. Ito
  4. 强誘電體と 構造相轉移 中村輝太郞
  5. Jpn. Appl. Phy. no.32 T. Mihara;H. Watanabe;C. A. Araujo
  6. Jpn. Appl. Phy. no.33 T. Mihara;H. Watanabe;C. A. Araujo
  7. J. Crystal. Growth. no.174 Fomation of YMnO₃films directly on Si substrate Nobuaki Aoki;Norifumi Fujimur;Takeshi Yoshimura;Taichiro Ito
  8. Jpn. J. Appl. Phys. no.38 Fabrication of YMnO₃Thin Films on Si Substrates by a Pulsed Laser Deposition Method T. Yoshimura;N. Fujimura;N. Aoki;K. Hokayama;S. Tsukui;K. Kawabata;T. Ito
  9. Jpn. J. Appl. Phys. no.36 YMnO₃thin films prepared from solutions for Volatile memory devices N. Fujimura;H. Tanaka;H. Kitahata;K. Tadaga;T. Yoshimura;T. Ito;T. Minami
  10. J. Am. Ceramic. Soc. v.81 no.5 Microstructer and Dielectric Properties of YMnO₃thin films prepared by dip-coating H. Kitahata;K. Tadanaga;T. Minami;N. Fujimura;T. Ito
  11. X-선 회절 분석 김문집;서일환
  12. J. Mat. Soc. Lett. no.8 Dielectric properies of Barium Titanate with Sb₂O₃and ZnO K. H. Yoou
  13. Soviet. Physics. Solid. State v.7 no.1 Determination of the currie point of ferroelectrics YMnO₃and YbMnO₃ I. G. Ismailzade;S. A. Kizhaev