Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Capacitor characteristics of SBT Ferroelectric Thin Films depending on substrate conditions

기판 조건에 따른 SBT 강유전체 커패시터의 특성

  • Published : 2000.02.01
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Abstract

Ferroelectric SrxBi2+yTa2O9+$\alpha$ thin films with various compositions(x=0.7, 0.8, 1, y=0.3, 0.4) were prepared by sol-gel method. The film with moled ratio of 0.8:2.3:2.0 in Sr/Bi/Ta, which was deposited on Pt/SiO2/Si (100), showed better ferroelectric properties than other films. To investigate substrate effects, the same compositions were spin coated on Pt/Ti/SiO2/Si (100) substrates. At an applied voltage of 5V, the dielectric constant($\varepsilon$r), remanent polarization (2Pr) and coercive field (Ec) of the Sr0.8Bi2.3Ta2O9+$\alpha$ thin film prepared on Pt/Ti/SiO2/Si (100) were about 296, 24$\mu$C/$\textrm{cm}^2$ and Ec of 49kV/cm respectively. Both SBT films firred at 80$0^{\circ}C$ revealed no fatigue up to 1010 cycles. Retention characteristics of these capacitors showed no degradation up to 104 sec.

Keywords

References

  1. Jpn. J. Appl. Phys. v.32 Evaluation of imprint properties in Sol-Gel ferroelectric Pb(ZrTi)O₃thin film capacitors T. Mihara;H. Watanabe;C. A. Paz de A raujo
  2. Nature v.374 Fatigue-free ferroelectric capacitors with platinum electrodes C. A. -Paz de Araujo;J. D. Cuchiaro;L. D. M cMillian;M. C. Scott;J. F. Scott
  3. IEEE. Trans. Elect. v.E81 C Structural defects in $Sr_{0.7}Bi_{2.3}Ta_2O_{9+{\alpha}}$ thin film for ferroelectric memory T. Osaka;S. Ono;A. Sakakibara;I. Koiwa
  4. Jpn. J. Appl. Phys. v.35 Chemical processing and dielectric properties of ferroelectric $SrBi_2Ta_2O_9$ thin films H. Takahashi;T. Hara
  5. Appl. Phys. Lett. v.66 Preparation and ferroelectric properties of $SrBi_2Ta_2O_9$ thin films K. Amanuma;T. Hase;Y. Miyasaka
  6. Jpn. J. Appl. Phys. v.35 Crystallization of $Sr_{0.7}Bi_{2.3}Ta_2O_{9+{\alpha}}$ thin films by chemical liquid deposition I. Koiwa;T. Hase;J. Mita;T. Iwabuchi;T. Osaka;S. Ono;M. Maeda
  7. Materials Science and Engineering v.B34 Fatigue-free $SrBi(Ta_xNb_{1-x})_2O_9$ ferroelectric thin films S. B. Desu;T. Li
  8. Integrated Ferroelectrics v.12 Sol-Gel and MOD processing of layered perovskite films M. Klee;U. Mackens
  9. Integrated Ferroelectrics v.15 Sr content dependence of ferroelectric properties in $SrBi_2Ta_2O_9$ thin films T. hase;T. Noguchi;K. Amanuma;Y. Miyasaka
  10. Jpn. J. Appl. Phys. v.35 Chemical processing and dielectric properties of ferroelectric SrBi_2Ta_2O_9$ thin films T. Hayashi;H. Takahashi;T. Hara
  11. Jpn. J. Appl. Phys. v.34 Preparation of Bi-based ferroelectric thin films by sol-gel method T. Atsuki;N. Soyama;T. Yonezawa;K. Ogi
  12. J. Appl. phys. v.84 Electronic characteristics of the $SrBi_20Ta_2O_9$-Pt junction K. Watanabe;A. J. Hartmann;R. N. Lamb;J. F. Scott