• Title/Summary/Keyword: 반도전자

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Dielectric Strength Enhancement of Extra High Voltage XLPE Power Cable by Micro-Structural Treatment on Semi-Conductive Interface (XLPE 계면에서의 라멜라 구조 제어 및 전기적 특성)

  • Cho, Dae-Hee;Shim, Sung-Ik;Youn, Bok-Hee;Lee, Sang-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.293-296
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    • 2004
  • 초고압 케이블의 절연물질로 널리 사용되고 있는 가교 폴리에틸렌의 전기적 특성은 라멜라 결정 조직의 밀도와 라멜라 조직의 성장방향과 밀접한 관련이 있는 것으로 알려지고 있다. 본 연구에서는 반도전 물질에 2종의 첨가제를 이용하여 처방한 3종의 반도전 컴파운드에 대하여 시편 제작 조건에 따른 미세 조직을 제어하여 폴리에틸렌의 미세 조직을 변화시킴으로써, 라멜라 조직이 전기적 특성에 미치는 영향을 분석하였다. 전기적 특성은 AC 절연파괴 전압을 측정하였으며, 미세 조직 변화를 조사하기 위하여 TEM 이미지 분석 통하여 라멜라 밀도를 통계적으로 정성 분석하여 상관관계를 규명하였다.

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Study on the Development of Qualification for Semiconductor Machine Maintenance (반도체장비유지보수 자격개발에 관한 연구)

  • Kang, Seog-Joo;Kang, Yeong-Heon
    • Proceedings of the KAIS Fall Conference
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    • 2011.12a
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    • pp.25-28
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    • 2011
  • 본 연구는 반도체 산업에서 반도체장비유지보수에 사용되어지는 반도체장비 유지보수 분야의 전문기술인력을 효과적으로 양성할 수 있는 반도체장비 유지보수의 자격종목을 개발하고자 하는데 그 목적이 있다. 연구의 목적을 달성하기 위하여 반도체장비 유지보수 분야의 국내외 실태 조사, 문헌조사를 통하여 반도체장비 유지보수 관련 교육훈련기관 및 검정 수요 예상 인력을 파악했으며, 유사자격제도(전자부품장착기능사, 전자부품장착산업기사, 생산자동화기능사, 생산자동화산업기사 등)를 분석하였고, 직무분석을 통하여 반도체장비유지보수기능사의 직무 및 교육내용을 분석하였다. 또한 반도체장비 유지보수 자격종목 신설에 대한 설문조사를 실시했으며, 반도체장비유지보수기능사 자격종목의 출제기준 및 채점 방법을 제시했고, 필기시험과 실기시험에 대한 모의 검정시험도 실시하였다. 이러한 결과를 토대로 반도체장비유지보수기능사에 대한 교육프로그램을 만들었으며, 자격검정을 실시할 수 있는 출제기준을 제시하였다.

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Investigation on Electrical Property of Amorphous Oxide SiZnSnO Semiconducting Thin Films (비정질 산화물 SiZnSnO 반도체 박막의 전기적 특성 분석)

  • Byun, Jae Min;Lee, Sang Yeol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.4
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    • pp.272-275
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    • 2019
  • We investigated the electrical characteristics of amorphous silicon-zinc-tin-oxide (a-SZTO) thin films deposited by RF-magnetron sputtering at room temperature depending on the deposition time. We fabricated a thin film transistor (TFT) with a bottom gate structure and various channel thicknesses. With increasing channel thickness, the threshold voltage shifted negatively from -0.44 V to -2.18 V, the on current ($I_{on}$) and field effect mobility (${\mu}_{FE}$) increased because of increasing carrier concentration. The a-SZTO film was fabricated and analyzed in terms of the contact resistance and channel resistance. In this study, the transmission line method (TLM) was adopted and investigated. With increasing channel thickness, the contact resistance and sheet resistance both decreased.

Time-Domain Read-Out Circuit for Inductive Sensor Applications (인덕티브 센서 응용을 위한 시간 영역 리드아웃 회로)

  • Jong-Yeob Oh;Sung-Hun Jo
    • The Journal of the Korea institute of electronic communication sciences
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    • v.18 no.4
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    • pp.625-640
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    • 2023
  • This paper propose a circuit that can measure the inductance of an inductive sensor used in IOT applications. The circuit was constructed using the characteristics of an RL low-pass filter circuit, comparator, current control switch, and capacitor, and the inductance value within the range 1[nH] < L ≤ 1[H] can be derived through the duration time during the output voltage of the RL low-pass filter circuit is greater than the reference voltage.

반도체제조의 생산성 제고를 위한 반도체 공정 주변기술

  • Lee, Yong-Il;Bae, Nam-Jin
    • Electronics and Telecommunications Trends
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    • v.3 no.1
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    • pp.53-64
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    • 1988
  • 소자의 집적도가 향상됨에 따라 공정조건 제어의 중요성이 부각되고 있다. 따라서 제조환경의 엄격한 제어가 요구되고, 사용되는 화학약품 및 탈이온수의 순도가 중요해지고 있다. 즉, 반도체 제조공정의 주변기술에 대한 중요성이 높아지는 추세이다. 본고에서는 이러한 주변기술의 발전동향에 대해 간략하게 기술하였다.

Prediction of Budget Prices in Electronic Bidding using Deep Learning Model (딥러닝 모델을 이용한 전자 입찰에서의 예정가격 예측)

  • Eun-Seo Lee;Gwi-Man Bak;Ji-Eun Lee;Young-Chul Bae
    • The Journal of the Korea institute of electronic communication sciences
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    • v.18 no.6
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    • pp.1171-1176
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    • 2023
  • In this paper, we predicts the estimated price using the DNBP (Deep learning Network to predict Budget Price) model with bidding data obtained from the bidding websites, ElecNet and OK EMS. We use the DNBP model to predict four lottery preliminary price, calculate their arithmetic mean, and then estimate the expected budget price ratio. We evaluate the model's performance by comparing it with the actual expected budget price ratio. We train the DNBP model by removing some of the 15 input nodes. The prediction results showed the lowest RMSE of 0.75788% when the model had 6 input nodes (a, g, h, i, j, k).

Fabrication of High Density and High Uniformity Irradiation Light Source for Exposure Curing System Using 365 nm and 385 nm Wavelength SMD LED and High Transmittance Silicone Resin TIR Bar Type Lens (365 nm 및 385 nm SMD LED와 TIR 바형 렌즈를 이용하는 고밀도 고균일성 특성의 경화용 광원모듈 제작 )

  • Pil Hong Jeong;Beom Jin Kim;Yeong Jin Kim;Dong Gyu Jeon;Hyo Min Kim;Jae Hyeon Kim;Hyeong Min Kim;Gyu Seong Lee;Kawan Anil;Eung Ryul Park;Soon Jae Yu;Min Jun Ann;Do Won Hwang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.4
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    • pp.394-399
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    • 2024
  • An irradiator is developed using two UVA wavelength ranges of SMD LEDs as a curing light source. This module has dimensions of 545×111×300 mm3 and is equipped with a TIR bar-shaped lens made of PDMS silicone resin. The developed irradiator offers high uniformity, with 89% in the centerline of the horizontal axis direction, for two different wavelength ranges of 365 nm and 385 nm. The radiation intensity from the light source module shows highly directional characteristics, and the irradiator provides a maximum irradiance of 1,634 mW/cm2 at a working distance of 50 mm. During the initial 5 minutes of operation, the irradiance experiences a rapid decrease. However, this issue is addressed by optimizing the LED's current reduction characteristics and managing the Transistor's temperature rise in the constant current circuit. After continuous operation for approximately 60 minutes. The highest temperature, near the central part of the irradiating surface, reaches 69.7℃, while the lowest temperature, near the edges, is 41.1℃.

Fabrication of InSb TFT and Parameters EXtraction Using Optimization Technique (InSb TFT의 제작과 최적화 기법에 의한 파라메타 추출)

  • Kim, Hong Bae;Son, Sang Hee;Kwack, Kae Dal
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.24 no.1
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    • pp.67-72
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    • 1987
  • InSb TFT is fabricated by the vacuum evaporation method and I-V characteristics are measured. Employing Davidon Fletcher-Powell algorithm, the device parameters are extracted. The current-voltage relations calculated by extracdted parameters are in good agreement with experimental results. It is found that optimization technique may be more simple and accurate than curve fitting method in device parameters extration.

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High power X-band SSPA Design using Gysel Power Combiner (Gysel 전력결합기를 이용한 고출력 X-band SSPA 설계)

  • Lee, Sang-Rok;Lim, Eun-Jae;Rhee, Young-Chul
    • The Journal of the Korea institute of electronic communication sciences
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    • v.9 no.4
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    • pp.425-432
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    • 2014
  • Necessity of compact X-band solid-state weather radar is required to provide weather data, which generate locally in a lot of Korea's mountainous area, rather than tube-type radar. Solid State Power Amplifier (SSPA) for using Dual-polarization method in weather radar is able to obtain desired high output by combining many low output power devices in parallel. Thus, Power combiner applying to high-output power amplifier has disadvantages such as path loss, ballast resistance problem by high frequency and high power, heat release. Therefore, In this paper we demonstrated the excellence of isolation, which is the result from modified Gysel power combiner. As a result, we designed X-band 250W solid state power amplifier with peak power 54dBm, 25% power efficiency for weather radar.