Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication of InSb TFT and Parameters EXtraction Using Optimization Technique

InSb TFT의 제작과 최적화 기법에 의한 파라메타 추출

  • Kim, Hong Bae (Dept. of Semi. Eng., Chongju Univ.) ;
  • Son, Sang Hee (Dept. of Elec. Eng., Hanyang Univ.) ;
  • Kwack, Kae Dal (Dept. of Elec. Eng., Hanyang Univ.)
  • 김홍배 (청주대학교 반도체공학과) ;
  • 손상희 (한양대학교 전자공학과) ;
  • 곽계달 (한양대학교 전자공학과)
  • Published : 1987.01.01
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Abstract

InSb TFT is fabricated by the vacuum evaporation method and I-V characteristics are measured. Employing Davidon Fletcher-Powell algorithm, the device parameters are extracted. The current-voltage relations calculated by extracdted parameters are in good agreement with experimental results. It is found that optimization technique may be more simple and accurate than curve fitting method in device parameters extration.

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