Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Characteristics of the Oxygen Plasma and Its Application to Photoresist Stripping

산소 플라즈마의 특성과 포토레지스트 제거에의 응용

  • Whang, Ki Woong (Dept. of Electrical Eng., Seoul National Univ.) ;
  • Lee, Jong Duk (Dept. of Elec. Eng., Seoul National Univ.) ;
  • Kim, Joung Ho (Dept. of Electrical Eng., Seoul National Univ.)
  • 황기웅 (서울대학교 전기공학과) ;
  • 이종덕 (서울대학교 전자공학과) ;
  • 김정호 (서울대학교 전기공학과)
  • Published : 1987.01.01
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Abstract

The physical mechanism of a RF discharge used in photoresist stripping and etching process are not well understood and, plasma reactor design and the determination of optimum operating coditions are done largely on empirical basis. We analyzed the discharge process through the measurement of plasma characteristics and applied out results tothe analysis of the photoresist stripping. We investigated the effects of plasma electron density, neutral oxygen gas pressure and electrode temperature on the stripping rates and related their effects with the characteristics of plasma.

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