• Proceedings of the Korean Society of Postharvest Science and Technology of Agricultural Products Conference
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• 2003.10a
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• pp.202.1-202
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• 2003

기계적 박피와 수작업 박피로 처리된 감자와 우엉을 수도수, 염소수, 전해수A(pH 2.6), 전해수B(pH 8.5)등의 4가지 세정수로 세정 횟수를 달리하여 최소가공의 초기 단계인 박피와 세정처리에 따른 품질특성을 조사하였다 감자 박피에 최적 조건은 박피도구를 이용한 수작업 박피로 감모율 8.40%, 우엉은 brushing에 의한 박피 방법으로 감모율이 8.05%로 타 처리에 비하여 현저히 낮게 나타났다. 세정에 의한 미생물 살균효과는 수작업 박피 감자의 수도수 세정시 총균수는 처리 직후 4.5$\times$$10^4$CFU/g으로 무처리시의 4.8$\times$$10^4$CFU/g와 거의 차이가 없는 반면에 전해수A에 의한 세정은 $1.5\times$$10^2$CFU/g으로 나타나 뛰어난 살균효과를 나타내었고, 염소수와 전해수B로 세정된 시료도 각각 3.0$\times$$10^2$CFU/g 및 2.5$\times$$10^2$CFU/g로 나타나 전해수 처리구가 수도수 처리구에 비하여 전반적으로 2 log cycle 정도 낮은 수준으로 감소하였다. 이와 같은 살균효과는 대장균군수의 경우에도 마찬가지로 나타났다. 염소수 세정은 수도수와 동일한 방법으로 세정후 시간 경과에 따라 건조에 의한 표면색도가 점차 밝게 변하는 특징을 보였다. 마찬가지로 박피 우엉의 세정처리에 있어서도 전체적으로 전해수가 타 세정수보다 미생물 살균효과를 나타내었으며 특히, 감자에서와는 달리 1회 세정보다 2회 세정시 더 우수한 살균효과를 보여주었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.120-120
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• 2003

MOCVD법으로 TiN 표면에 Ru을 증착함에 있어서 Ru의 핵생성을 고양시키기 위한 ECR plasma 전처리 세정이 필요하다. 본 연구에서는 Ru 증착시 ECR $H_2O$$_2$, AE Plasma 전처리 세정 효과를 SEM, AES, XRD로 분석하였다. Ru의 핵생성은 ECR H$_2$, Ar Plasma의 노출시간이 증가할수록 향상된 반면, ECR $O_2$ plasma의 경우 노출시간이 증가할수록 핵생성 효과는 감소하였다. H$_2$ plasma 내의 H$_2$ion은 Ti와 NH$_3$를 형성하기 위해서 TiN과 반응하여 TiN을 Ti로 개질 시켰으며, Ar plasma 전처리 세정하는 동안 Ar plasma 내의 Ar ion은 TiN 또는 TiON 표면의 질소와 산소원자를 제거하는 효과를 나타내었다. 그 결과 TiN 표면상에서도 Ru의 핵생성이 쉽게 이루어졌으며 H$_2$, Ar ECR Plasma 전처리 세정에서 RU 핵생성이 향상되는 결과를 얻었다. 세 종류의 plasma중에서 Ar ECR plasma로 전처리 세정한 경우에 가장 높은 Ru 핵생성 밀도를 얻을 수 있었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.163-163
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• 2003

TiN barrier막 위에 metal organic chemical deposition(MOCVD)법으로 RuO$_2$ 를 증착시 TiN막 표면을 세정처리하지 않을 경우 RuO$_2$의 핵생성이 어렵고, 그로 인해 RuO$_2$ 연속막이 형성되기 힘들다. 그러므로 RuO$_2$의 핵생성을 향상시키기 위해 TiN막에 대한 전처리 세정이 필수적이다. TiN막의 전처리 세정방법으로 ECR plasma 세정법을 사용하였으며, $O_2$ plasma와 H$_2$ plasma 그리고 Ai plasma를 이용해 각각의 exposure time을 변화시키며 전처리 세정을 실시하였다. H$_2$ plasma와Ar plasma의 exposure time이 증가됨에 따라 RuO$_2$의 핵생성이 향상되었다. 본 연구에서는 scanning electron microscopy(SEM), Auger electron emission spectrometry(AES), Atomic Force Microscope(AFM), X-ray diffraction (XRD) 등의 분석을 통해 TiN막 표면에 대한 ECR plasma 전처리 세정 이 RuO$_2$의 핵생성과 연속막 성장에 미치는 효과에 대해 조사하였다.

• Clean Technology
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• v.19 no.3
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• pp.219-225
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• 2013

Environment-friendly and surfactant-free aqueous cleaning agents have been developed in order to solve various problems generated by surfactants in the aqueous cleaning agents. Aqueous surfactant-free cleaning agents, S-1 and S-2 have been formulated with water-soluble solvents such as propylene glycol and propylene glycol ether on their main components and with some additives. These solvents were chosen because of their good solubility in water and excellent solubility of fluxes which are major contaminants of printed circuit board in the electronic industry. Physical properties of the formulated and the imported cleaning agents were measured to predict their cleaning performance, and their cleaning abilities of flux and solder contaminants were evaluated under the various ultrasonic frequencies by a gravimetric method. The measurement results show that the physical properties of cleaning agent V are generally similar with those of formulated cleaning agents S-1 and S-2. Both the cleaning agent V and the formulated cleaning agents S-1 and S-2 showed similar trends that their pH decrease in the beginning and then increases later on with the increase of their dilution in water. It is considered that the wetting indices of the cleaning agents calculated with experimental values do not not have any influence on their cleaning ability. In ultrasonic cleaning tests under three ultrasonic frequencies of 28, 45, and 100 kHz, their best performances of cleaning solder and flux were obtained at 45 kHz and 28 kHz, respectively, and the cleaning performance of the formulated cleaning agents S-1 and S-2 was better than that of the cleaning agent V. However, in the case of the recommended diluted concentration of 25 wt% cleaning solution, the cleaning performance of the cleaner V for solder and flux was better in the initial stage of cleaning compared to the formulated cleaners. And it may be concluded that the formulated cleaning agents S-1 and S-2 can be applied to cleaning of solder and flux in the industry, based on the experimental results in this study.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 1999.05a
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• pp.69-74
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• 1999

각종 산업체의 공정에서 혹은 석탄 혹은 석유를 사용하는 화력발전설비에서 다량 발생되는 질소산화물(NOx), 황산화물(SOx)의 배출규제가 점점 강화되어 감에 따라 배출량 절감이 절실히 요구된다. 기존의 배기가스 정화장치는 처리대상에 따라 다양한 방법들이 사용되는데 황산화물의 경우 습식, 반건식, 건식세정법에 의해, 질소산화물은 선택적 촉매환원법(Selective Catalytic Reduction)과 선택적 무촉매환원법(Selective Non Catalytic Reduction)이 널리 이용되고 있다.(중략)

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.102-109
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• 2000

It is difficult to meet the cleanliness requirement of $10^{10}/\textrm{cm}^2$ for the giga level device fabrication with mechanical cleaning techniques like scrubbing which is widely used to remove the particles generated during Chemical Mechanical Polishing (CMP) processes. Therefore, the second cleaning process is needed to remove metallic contaminants which were not completely removed during the mechanical cleaning process. In this paper the experimental results for the removal of the metallic contaminants existing on the wafer surface using remote plasma $H_2$ cleaning and UV/$O_3$ cleaning techniques are reported. In the remote plasma $H_2$ cleaning the efficiency of contaminants removal increases with decreasing the plasma exposure time and increasing the rf-power. Also the optimum process conditions for the removal of K, Fe and Cu impurities which are easily found on the wafer surface after CMP processes are the plasma exposure time of 1min and the rf-power of 100 W. The surface roughness decreased by 30-50 % after remote plasma $H_2$ cleaning. On the other hand, the highest efficiency of K, Fe and Cu impurities removal was achieved for the UV exposure time of 30 sec. The removal mechanism of the metallic contaminants like K, Fe and Cu in the remote plasma $H_2$ and the UV/$O_3$ cleaning processes is as follows: the metal atoms are lifted off by $SiO^*$ when the $SiO^*$is evaporated after the chemical $SiO_2$ formed under the metal atoms reacts with $H^+ \; and\; e^-$ to form $SiO^*$.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.69-74
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• 2015

With difficulties during the cleaning of reflow flux residues due to the decrease of the part size and interconnection pitch in the advanced electronic devices, the need for the no-clean solder paste is increasing. In this study, an epoxy curable solder paste was made with SAC305 solder powder and the curable flux of which the main ingredient is epoxy resin and its reflow solderability, flux residue corrosivity and solder joint mechanical properties was investigated with comparison to the commercial rosin type solder paste. The fillet shape of the cured product around the reflowed solder joint revealed that the curing reaction occurred following the fluxing reaction and solder joint formation. The copper plate solderability test result also revealed that the wettability of the epoxy curable solder paste was comparable to those of the commercial rosin type solder pastes. In the highly accelerated temperature and humidity test, the cured product residue of the curable solder paste showed no corrosion of copper plate. From FT-IR analysis, it was considered to be resulted from the formation of tight bond through epoxy curing reaction. Ball shear, ball pull and die shear tests revealed that the adhesive bonding was formed with the solder surface and the increase of die shear strength of about 15~40% was achieved. It was considered that the epoxy curable solder paste could contribute to the improvement of the package reliability as well as the removal of the flux residue cleaning process.

• The Journal of Korean Academy of Prosthodontics
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• v.49 no.2
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• pp.138-144
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• 2011

Purpose: The purpose of this study was to evaluate the cleansing effect of recently developed alkaline ionized water, e-WASH, on microorganisms of the denture surface. Materials and methods: Removable partial and complete dentures were randomly assigned to the experimental group of 41 dentures, and the control group of 26. The denture was immersed in the e-WASH solution (experimental group), or tap water (control group) for 5 minutes. The plaque was collected from the denture surface before and after immersion, and smeared on the slide glass. Amount and motility of microorganisms were compared according to the morphology and strain of microorganisms, using the phase contrast microscope. Statistical analysis was accomplished with paired t-test and independent t-test at 95% confidence level (P<.05). Results: 1. The amount of cocci, bacilli, filamentous, spiral/comma, and the motility of bacilli, filamentous, and spiral/comma were decreased after denture cleansing with the alkaline ionized water, e-WASH (P<.05). But in the control group, only the amount of cocci showed a significant difference (P<.05), but no difference from the others. There were no differences in other analysis. 2. In the experimental group, the amount of cocci, bacilli, filamentous, spiral/comma, and the motility of bacilli, filamentous, and spiral/comma were smaller and more inactive compared to the control group (P<.05). Conclusion: These results indicated that the alkaline ionized water, e-WASH could effectively reduce the amount and motility of the experimented microorganisms on the denture surface, and that e-WASH could be recommended as an effective denture cleanser.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.54-54
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• 1997

• Food Science and Preservation
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• v.7 no.4
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• pp.403-408
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• 2000

To enlarge applicable field of electrolyzed acid-water(EAW) on food industry, quality changes of agaricus mushroom(Agaricus blazei Mui1l) washed with cooled EAW were investigated during storage at 5$\^{C}$. Total count and coliform count were decreased to 1/88 level and l0$^1$cfu/g respectively by immersion washing with EAW for 5 min. Agaricus mushroom washed with EAW had showed better quality properties such as weight loss, pH, acidity, browning, organoleptic properties after 3∼4 days of storage at 5$\^{C}$ except firmness of the trunk parts of agaricus mushroom comparing with non-treated one. △E values of agaricus mushroom showed lower increasement than those of non-treated ones after 3∼4 days of storage. Considering organoletpic and quality characteristics of stored agaricus mushroom synthetically, it was showed that EAW could be applicable to shelf life extension of argaricus mushroom.