• Title/Summary/Keyword: 마이크로구조특성

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A Study on the Design and Fabrication of the UWB Bandpass Filter (초광대역 대역통과여파기의 설계와 제작에 관한 연구)

  • Goog, Jung-Hyoung;Choi, Byoung-Ha;Kim, Gyu-Cheol;Park, Jung-Ryul;Ham, Min-Su
    • Journal of Advanced Navigation Technology
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    • v.13 no.1
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    • pp.41-47
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    • 2009
  • In this paper, a band pass filter with a rejection band is proposed for UWB(Ultra Wide Band) communication system. First, low pass filter accessed cut off frequency of 10.2 GHz was designed using structure stepped impedance. And high pass filter accessed cut of frequency of 3.2 GHz was designed using parallel short-stub. There was implemented composite connection of designed low pass filter and high pass filter. The relative dielectric constant, the height, the loss tangent of the PCB substrate were ${\varepsilon}_r$=2.2, h=0.508 mm and loss tangent = 0.0009 respectively. The fabricated band pass filter shows a compact size of 3 cm. The fabricated band pass filter was characterized using 37169A VNA(Vector Network Analyzer). And measured result were obtained 7.5 GHz of bandwidth and -10 dB of return loss and -3 dB of insertion loss from pass band. The result of the research can be used for the UWB communications and MIC/MMIC, RFIC system.

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Miniaturized folded-slot antenna for 2.4 GHz ZigBee module (2.4GHz 지그비 모듈용 소형화된 폴디드 슬롯 안테나)

  • Lee, Young-Soon;Yoo, Jin-Ha
    • Journal of Advanced Navigation Technology
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    • v.17 no.2
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    • pp.171-176
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    • 2013
  • A microstrip-fed miniaturized folded-slot antenna that is cut at the finite ground plane edge for the size reduction is proposed as a ZigBee module operating in the 2.4 GHz frequency band, as specified by the IEEE standard 802.15.4. The antenna is fabricated within space limited to $35mm{\times}9mm$ on a $35mm{\times}35mm$ substrate, which is about the PCB size of a typical wireless ZigBee module. The measured impedance bandwidth and antenna gain are 2.37~2.49 GHz and 2.4 dBi respectively. The measured radiation patterns are similar to conventional folded-slot antennas and are also stable across the pass band. These properties and its compact structure help in making the antenna suitable for ZigBee module.

Internal Microstrip DualBand Antenna (내장형 마이크로스트립 듀얼밴드 안테나)

  • Park Seong-il;Ko Young-hyuk;Lee Hyeon-jin;Lim Yeong-seog
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.42 no.4 s.334
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    • pp.29-36
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    • 2005
  • Many novel designs of planar antennas for related applications such as internal mobile phone antennas, base station antennas, WLAN or Bluetooth antennas, and so on, have been reported very recently, especially since the year 2000. In this thesis, Dualband internal antenna for GSM/DSC handset is proposed. The antenna has a size of about 38mm$\times$90mm$\times$1mm, giving a total mobile phone PCB for support and fold type Patch of about 30mm$\times$8mm$\times$3.2mm. This antenna characteristic facilitates the fine-tuning of the two operating frequencies of 909MHz and 1762MHz in this dualband design. The measured radiation pattern in the E-plane and H-plane for operating frequencies of 909MHz and 1762MHz is compared and analyzed. The designed and fabricated two band internal antenna for GSM/DSC handset have a gain between 0dBi and 2.0dBi at all bands.

Fabrication and Design of a Compact Narrow Band Pass Filter Using Slot Type Split Spiral Resonators (슬롯형 분할 나선형 공진기를 이용한 소형 협 대역통과 필터 설계 및 제작)

  • Choi, Dong-Muk;Kim, Dang-Oh;Jo, Nam-I;Kim, Che-Young
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.47 no.4
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    • pp.38-42
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    • 2010
  • In this paper, a design method of the compact narrow band filter on the microstrip board is proposed using slot-type split spiral resonators. The design technique of this filter is based on cascading filter stages consisting of the combination of slot-type split spiral resonators, capacitive gaps between patches, and inductive grounded stubs with the meander configuration. By these means, it was possible to get the nearly symmetric frequency responses, adjustable bandwidths, compact sizes. And also excellent characteristic of the out-of-band rejection is achieved in contrast to the conventional filter design technique. The measured insertion loss shows good results about -3.47dB at the center frequency($f_0$=1GHz) and passband return loss is less than -12.62dB. The 3dB fractional bandwidth(FBW) is approximately 7.3%. The results of the frequency response measured on the fabricated band pass filter substrate show satisfactory agreement with the simulated frequency responses by the MWS(Microwave Studio) of CST in the region of interest.

Effects of pt catalyst on the sensitivity of ZnO nanowire gas sensor (ZnO 나노선 기반의 가스센서에서 Pt 촉매가 감도에 미치는 영향)

  • Jung, Tae-Hwan;Kwon, Soon-Il;Park, Seung-Beom;Lee, Seok-Jin;Yang, Kea-Joon;Lim, Dong-Gun;Park, Jae-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.281-281
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    • 2008
  • 최근 높은 비표면적, 우수한 결정성, 나노스케일의 크기 등 다양한 물리 화학적 특성을 지닌 1차원 나노구조체를 이용한 가스센서 연구가 활발히 진행되고 있다. 가스센서는 네트워크 된 나노선들 이용하여 벌크, 박막 보다 극대화된 비표면적으로 가스 감도와 반응 속도를 향상시킬 수 있었다. 촉매 첨가를 위해 Acetylacetone 용액 7 ml에 10 mM이 되도록 Pt 분말을 첨가하여 촉매용액을 제조하였다. 마이크로피펫을 이용하여 미량을 센서의 감응체 부문에 뿌려 대기 중에서 건조한 후 센서의 감도를 측정하였다. 측정은 $250^{\circ}C$에서 일산화탄소 가스 500 ppm의 가스농도로 촉정하였을 때 촉매가 첨가된 센서가 70% 이상의 개선된 감도를 나타내었다. 이는 나노선에 분산된 촉매에 주입되는 가스가 흡착되고 다시 표면의 산소와 반응하여 전기전도도를 변화시키는 것으로 보인다. 첨가된 촉매에 대한 영향을 분석하기 위해 AES, XRD, FT-IR, TEM 등의 분석을 실시하였다.

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A New Design of High-Speed 1-Bit Full Adder Cell Using 0.18${\mu}m$ CMOS Process (0.18${\mu}m$ CMOS 공정을 이용한 새로운 고속 1-비트 전가산기 회로설계)

  • Kim, Young-Woon;Seo, Hea-Jun;Cho, Tae-Won
    • Journal of IKEEE
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    • v.12 no.1
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    • pp.1-7
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    • 2008
  • With the recent development of portable system such as mobile communication and multimedia. Full adders are important components in applications such as digital signal processors and microprocessors. Thus It is important to improve the power dissipation and operating speed for designing a full adder. We propose a new adder with modified version of conventional Ratioed logic and Pass Transistor logic. The proposed adder has the advantages over the conventional CMOS, TGA, 14T logic. The delay time is improved by 13% comparing to the average value and PDP(Power Delay Product) is improved by 9% comparing to the average value. Layouts have been carried out using a 0.18um CMOS design rule for evaluation purposes. The physical design has been evaluated using HSPICE.

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Transmission Line Parameter Extraction and Signal Integrity Verification of VLSI Interconnects Under Silicon Substrate Effect (실리콘 기판 효과를 고려한 VLSI 인터컨넥트의 전송선 파라미터 추출 및 시그널 인테그러티 검증)

  • 유한종;어영선
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.36C no.3
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    • pp.26-34
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    • 1999
  • A new silicon-based IC interconnect transmission line parameter extraction methodology is presented and experimentally examined. Unlike the PCB or MCM interconnects, a dominant energy propagation mode in the silicon-based IC interconnects is not quasi-TEM but slow wave mode(SWM). The transmission line parameters are extracted taking the silicon substrate effect (i.e., slow wave mode) into account. The capacitances are calculated considering silicon substrate surface as a ground. Whereas the inductances are calculated by using an effective dielectric constant. In order to verify the proposed method, test patterns were designed. Experimental data have agreement within 10%. Further, crosstalk noise simulation shows excellent agreements with the measurements which are performed with high-speed time domain measurement ( i.e., TDR/TDT measurements) for test pattern, while RC model or RLC model without silicon substrate effect show about 20~25% underestimation error.

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A 60 GHz Bidirectional Active Phase Shifter with 130 nm CMOS Common Gate Amplifier (130 nm CMOS 공통 게이트 증폭기를 이용한 60 GHz 양방향 능동 위상변화기)

  • Hyun, Ju-Young;Lee, Kook-Joo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.11
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    • pp.1111-1116
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    • 2011
  • In this paper, a 60 GHz bidirectional active phase shifter with 130 nm CMOS is presented by replacing CMOS passive switchs in switched-line type phase shifter with Common Gate Amplifier(bidirectional amplifier). Bidirectional active phase shifter is composed of bidirectional amplifier blocks and passive delay line network blocks. The suitable topology of bidirectional amplifier block is CGA(Common Gate Amplifier) topology and matching circuits of input and output are symmetrical due to design same characteristic of it's forward and reverse way. The direction(forward and reverse way) and amplitude of amplification can be controlled by only one bias voltage($V_{DS}$) using combination bias circuit. And passive delay line network blocks are composed of microstrip line. An 1-bit phase shifter is fabricated by Dongbu HiTek 1P8M 130-nm CMOS technology and simulation results present -3 dB average insertion loss and respectively 90 degree and 180 degree phase shift at 60 GHz.

The Scattering Property of EVA/SiO2 Composite Film Formed Micro-aggregation Structure for Roll-to-roll Process (Roll-to-roll 적용 가능한 마이크로 응집 구조를 갖는 EVA/SiO2 복합 필름의 산란 특성)

  • Jo, Kuk Hyun;Yang, Jun Yeong;Lee, Si Woo;Park, Eun Kyoung;Choi, Geun Seok;Song, Ki Won;Kim, Hyo Jung
    • Textile Coloration and Finishing
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    • v.30 no.3
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    • pp.190-198
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    • 2018
  • We fabricated high transmission and high scattering poly(ethylene-co-vinyl acetate)(EVA) films embedding $SiO_2$ nanoparticles to improve outcoupling efficiency in organic display. The 800nm diameter $SiO_2$ nanoparticles aggregated and formed $1.56{\mu}m$ (with ${\pm}0.853{\mu}m$ standard deviation) diameter microparticles in EVA. The total transmission of scattering film was 83.3% on Polyethylene terephthalate(PET), which was higher than reference 82.8% PET substrate. The diffuse transmission and haze of the $SiO_2$ embedded EVA film were 76.1% and 91.4%, respectively. The optimized condition was 1:1 weight ratio of $SiO_2$ nanoparticles to EVA in Tetrahydrofuran(THF) solution. When the ratio of $SiO_2$ was larger than 1, the total transmission decreased by the increase in backscattering of light due to high scattering. With the optimized condition, we could succeed to fabricate a large scale film(35m in length) with a roll-to-roll process.

Broadband Quasi-Yagi Antenna with a Ring-type Balun for Indoor DTV Reception (링형 밸런을 이용한 실내 DTV 수신용 광대역 준-야기 안테나)

  • Lee, Jong-Ig;Yeo, Junho
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.5
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    • pp.906-912
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    • 2017
  • In this paper, we studied a design method for a broadband 3-element quasi-Yagi antenna (QYA) for indoor digital television (DTV) reception. The proposed QYA employs a novel balun between a microstrip (MS) line and a coplanar strip (CPS) line feeding the driver dipole. The proposed balun is constructed by connecting the end of MS line to CPS line through a shorting pin, and the CPS and ground reflector are connected through a circular ring-type conductor. An antenna, as an design example for the proposed antenna, is designed for the operation in the frequency band of 470-806 MHz for terrestrial DTV. The antenna fabricated on an FR4 substrate with a size of $270mm{\times}150mm$ showed a good performance such as a frequency band of 470-820 MHz for a voltage standing wave ratio < 2, a gain > 4.0 dBi, and a front-to-back ratio > 8.4 dB over the DTV frequency band.