• Proceedings of the KAIS Fall Conference
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• 2012.05b
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• pp.762-764
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• 2012

본 연구에서는 잉곳을 절삭하여 웨이퍼를 만들 때 발생하는 슬러리로부터 SiC를 분리하고, 이를 재생시켜 다공성 SiC 세라믹 히트싱크를 제작하였다. 또한 제작 된 다공성 SiC 세라믹 히트싱크의 열적물성치를 레이저 플래쉬 방법으로 측정하였고 알루미늄 히트싱크와의 비교실험을 통해 다공성 SiC 세라믹 히트싱크의 방열성능을 검증하였다.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.273-279
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• 2006

This study explored the possibility of porous Si (PS) formed by indirect electrode anodization used for effective isolation material for radio frequency integrated circuits (RFIC). We investigated the effect of current density and reaction time on the porosity size and depth, and X-ray diffraction of bulk Si and porous Si to evaluate the change in lattice parameter. Porosity size and depth usually increases with an increase in the current density and reaction time. PS increases the lattice parameter of Si compared to the bulk Si which causes the compressive stress of around 8 MPa. PS formed by the method is believed to be suitable for isolation material for RFIC because it is simple process as well as good compatibility to Si VLSI process.

• Korean Chemical Engineering Research
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• v.54 no.4
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• pp.459-464
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• 2016

In this study, the electrochemical characteristics of porous silicon/carbon composite anode were investigated to improve the cycle stability and rate performance in lithium ion batteries. In this study, the effect of TEOS and $NH_3$ concentration, mixing speed and temperature on particle size of nano silica was investigated using $St{\ddot{o}}ber$ method. Nano porous Si/C composites were prepared by the fabrication processes including the synthesis of nano $SiO_2$, magnesiothermic reduction of nano $SiO_2$ to obtain nano porous Si by HCl etching, and carbonization of phenolic resin. Also the electrochemical performances of nano porous Si/C composites as the anode were performed by constant current charge/discharge test, cyclic voltammetry and impedance tests in the electrolyte of $LiPF_6$ dissolved inorganic solvents (EC:DMC:EMC=1:1:1vol%). It is found that the coin cell using nano porous Si/C composite has the capacity of 2,006 mAh/g and the capacity retention ratio was 55.4% after 40 cycle.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.5
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• pp.2002-2008
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• 2012

In recent years, while the importance of thermal management has been emphasized due to smaller electronic products, various materials have been used as heat sink. In this study, porous ceramic heat sink was developed with SiC, successfully separated from the slurry of SiC occurring in solar energy materials industry and the thermal performance of porous SiC heat sink has been compared with those of aluminum heat sink and pure SiC heat sink through experiment. From the experimental results, it was verified that porous recycled SiC heat sink has better thermal performance than aluminum heat sink since its micropores increase the heat transfer area. In addition, the effect of the micropores on thermal performance has been quantified by increasing convective heat transfer coefficient with numerical analysis.

• Journal of Energy Engineering
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• v.2 no.2
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• pp.187-193
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• 1993

Porous matrices to contain and support phosphoric acid were prepared with PTFE as binder and SiC whisker or SiC powders of various particle size for phosphoric acid fuel cell(PAFC). Among the matrix characteristics the most important factors in stack performances were thought to be the bubble pressure and electrolyte wettability And then matrix was constructed to have pore size smaller than that of electrode. The bubble pressures and wettabilities of matrices manufactured with various size of SiC and different PTFE contents were investigated and related with the porosities measured by porosimeter, and then the optimum manufacturing condition of matrix for PAFC was determined.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.6
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• pp.855-859
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• 2012

Silicon nanowires (SiNWs) were fabricated by a metal-assisted chemical etching of Si and the porous structure on their surfaces was controlled by changing the volume ratio of the etching solution composed of hydrofluoric acid, hydrogen peroxide, and deionized water. The concentration of hydrogen peroxide as the oxidant was varied for controlling the porosity of SiNWs. The optical properties of porous SiNWs were unique and very different from those of single-crystalline Si, as characterized by measuring their photoluminescence and Raman spectra for different porosities.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.55-60
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• 2009

Porous silicon film is fabricated by electrochemical etching in a chemical mixture of HF and ethanol. Effects of Si type, Si resistivity, ultrasonic frequency, current density and etching time on surface morphology of PS film were studied. Electrochemical etching in ultrasonic bath promotes the uniformity of porous layer of Si. Frequency of ultrasonic was increased from 40 kHz to 130 kHz to obtain uniform pores on the Si surface. When current density was higher, the sizes of pores were larger. The new etching cell using back contact metal and current shield help to overcome nonhomogeneity and current crowding effect, and then leads to fabricate uniform pores on the Si surface. The distribution of pore size shows no notable tendency with etching time.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.4
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• pp.182-189
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• 2021

Porous ceramics were manufactured using the foaming method for the development of inorganic insulating materials. Silica fume and SiO₂ were used as main raw materials, and bentonite was used as a rapid setting agent for uniform structure formation of porous ceramics. The porous ceramics were sintered at 1200℃, and porosity, density, compressive strength, microstructure and thermal conductivity were analyzed. As the content of silica fume to SiO₂ of the porous ceramics increased 70 to 90 %, the specific gravity increased from 0.63 to 0.69, and the compressive strength increased from 9.41 Mpa to 12.86 Mpa. But, the porosity showed a tendency to decrease from 72.07 % to 70.82 %, contrary to the specific gravity. As a result of measuring the thermal conductivity, the porous ceramic with a silica fume content of 70 % showed a thermal conductivity of 0.75 to 0.72 W/m·K at 25 to 800℃, respectively, and, another that a silica fume content of 90 % showed a 0.66~0.86 W/m·K. So the lower the silica f ume content, the lower the thermal conductivity, which was conf irmed to be consistent with porosity result. As a result of microstructure analysis using SEM (Scanning Electron Microscope), pores in the range of tens to hundreds ㎛ were observed inside and outside the porous ceramic, and it was confirmed that the pore distribution was relatively uniform.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.99-104
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• 2007

Porous silicon exhibiting dual optical properties, both $Febry-P{\acute{e}}rot$ fringe (optical reflectivity) and photoluminescence had been developed and used as chemical sensors. Porous silicon samples were prepared by an electrochemical etch of p-type silicon wafer (boron-doped, <100> orientation, resistivity ; $1-10{\Omega}cm$). Two different types of porous silicon, fresh porous silicon (Si-H terminated) and oxidized porous silicon (Si-OH terminated)by the thermal oxidation, were prepared. Then the samples were exposed to the vapor of various organics, such as methanol, acetone, hexane, and toluene. Both reflectivity and photoluminescence were simultaneously measured under the exposure of organic vapors for sensing VOC's. These surface-modified samples showed unique respond in both reflectivity and photoluminescence with various organic vapors. While polar molecules exhibit greater quenching photoluminescence, molecules having higher vapor pressure show greater red shift for reflectivity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.51-55
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• 2015

The present research is focused on the effect of porous graphite what is influenced on the 4H-SiC crystal growth by PVT method. We expect that it produces more C-rich and a change of temperature gradient for polytype stability of 4H-SiC crystal as adding the porous graphite in the growth cell. The SiC seeds and high purity SiC source materials were placed on opposite side in a sealed graphite crucible which was surrounded by graphite insulator. The growth temperature was around $2100{\sim}2300^{\circ}C$ and the growth pressure was 10~30 Torr of an argon pressure with 5~15 % nitrogen. 2 inch $4^{\circ}$ off-axis 4H-SiC with C-face (000-1) was used as a seed material. The porous graphite plate was inserted on SiC powder source to produce a more C-rich for polytype stability of 4H-SiC crystal and uniform radial temperature gradient. While in case of the conventional crucible, various polytypes such as 6H-, 15R-SiC were observed on SiC wafers, only 4H-SiC polytype was observed on SiC wafers prepared in porous graphite inserted crucible. The defect level such as MP and EP density of SiC crystal grown in the conventional crucible was observed to be higher than that of porous graphite inserted crucible. The better crystal quality of SiC grown using porous graphite plate was also confirmed by rocking curve measurement and Raman spectra analysis.