• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.260-264
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• 2003

It is possible to design the high performance, integration and low cost radio frequency components by using LTCC(Low Temperature Cofired Ceramic) technology. But there is a critical point to design the spiral inductor because of crosstalk effects. of the crosstalk effect of the spiral inductor are investigated using full-wave analysis of the FEM(Finite Element Method) in this paper. The results show that input power of the spiral inductor are coupled from 0.1% to 10% above 3GHz. Therefore, we should consider the crosstalk effects when we design the LTCC.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.11
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• pp.1967-1971
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• 2007

In this paper, we verified basic forms and equivalent circuits of spiral inductors and various kinds of parasitics of equivalent circuits by using HFSS and Nexxim program that were 3-D EM analysis tools, and fabrication on-chip spiral inductors using Hynix's 0.25um 1-poly and 5-metal CMOS process. Comparing with PGS(patterned ground shield) and NPGS(non patterned ground shield) of spiral inductors of 3.5 turn, 4.5 turn and 5.5 turn, etc, the application of PGS could improve maximum Q value by 8-12%.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.12
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• pp.2269-2275
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• 2008

This paper examined the simulation results after applying not only spiral inductor's 3D EM simulation but also de-embedding technique to reduce the pad's RF effects. When calculating standard deviation with measurement results not only the gain at 0.5GHz${\sim}$4GHz but also noise figure at 1.8GHz${\sim}$4GHz, the simulation results includes de-embedded inductor' model improved gain deviation by 0.171 and noise figure deviation by 0.151 than the results from simulation with foundry inductor equivalent circuit models.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.1
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• pp.6-11
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• 2003

The multi layer spiral inductors, which enhance the quality factor Q of an inductor fabricated on the silicon substrate, has been designed using a TSMC CMOS 0.2sum 1-poly 5-metal layer technology. To investigate the performance of the designed inductors, a 2.5-dimensional field simulation tool(Momentum) is used. The simulation results show that the quality factor Q of the 5-metal inductor is improved 1.8 times over that of a convention31 spiral inductor at 2GHz for wireless LAN applications.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.107-108
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• 2008

This article describes optimization for PGS(Patterned Ground Shield) of rectangular spiral inductor using Taguchi's Design of Experiment. PGS is decrease method of parasite component by silicon substrate among dielectric loss reduction method. Using taguchi's design of experiment, each parameter is fixed upon that PGS high poison(A), slot spacing(B), strip width(C) and overlap turn number(D) of PGS design parameter. Then we verified that percentage contribution and design sensitivity analysis of each parameter and level by signal to noise ratio of larger-the-better type. We consider percentage contribution and design sensitivity of each parameter and level, and then verify that model of optimization for PGS is lower inductance decreasing ratio and higher Q-factor increasing ratio by EM simulation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.3
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• pp.343-351
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• 2008

In this paper, a spiral shaped common mode filter(CMF) embedded in a flexible printed circuit board(FPCB) is proposed for a multi-function cable. The CMF embedded in a FPC cable presents a new concept as a multi-function cable by the common mode rejection characteristics without a surface mounted device(SMD) CMF. The embedded CMF has a wideband common mode rejection bandwidth and an enhanced differential mode characteristics compared to conventional CMFs that use a magnetic material such as a ferrite of high loss. The proposed CMF of 3 turn inductors has a common mode rejection bandwidth from 0.4 GHz to 3.12 GHz and has 1.95 dB at 3 GHz, 6.97 dB at 8 GHz improvements of a differential mode insertion loss compared to the commercial LTCC(Low Temperature Co-fire Ceramics) CMFs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.109-111
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• 2006

This paper presents characterization and analysis of integrated ferromagnetic inductors in RF regime. Two different materials (CoFe/NiFe) are used as ferromagnetic material. Systematic studies of the inductance (L), the Q-factor (Q) and the structure of the inductor have been performed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.7
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• pp.713-721
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• 2004

This paper presents a high Performance LNA based on InGaP/GaAs HBT for 5.4㎓ WAM band applications. During the past days, InGaP/GaAs HBT has been being used for mainly high power amplifiers, but InCaP/GaAs is recognized as a suitable device for RF single chip. At this point, the research about a high performance LNA based on InGaP/GaAs HBT must be preceded, and in this paper, a excellent linearity and noise characteristics LNA based on InGaP/GaAs HBT is desisted and fabricated. The LNA is integrated in new of 0.9${\times}$0.9$\textrm{mm}^2$ single chip with high Q spiral inductors and MIM capacitors. The proposed LNA is biased at current point for optimum noise figure and gain characteristics, futhermore, excellent linearity is achieved. The proposed LNA shows 13㏈ gain, 2.1㏈ noise figure, and excellent linearity in terms of IIP3 of 5.5㏈m.