• 한국광학회:학술대회논문집
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• 한국광학회 1999년도 제16회 광학 및 양자전자 학술발표회Proceedings of 16th Optics and Quantum Electronics Conference, 1999
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• pp.108-109
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• 1999

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.191-194
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• 2000

In this study, we have investigated the photoinduced birefringence(PB), ${\Delta}n$ in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with a He-Ne Laser at 633nm as In this study, we have investigated the photoinduced birefringence(PB), ${\Delta}n$ in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with a He-Ne Laser at 633nm as a pumping beam and a semiconductor laser at 780nm as a probing beam. The PB for the variable thickness of thin films was investigated. The thickness of the thin films is about $0.4{\mu}m$, $0.92{\mu}m$, $1.4{\mu}m$, $2.0{\mu}m$, respectively. The experimental result of PB in chalcogenide thin films was represented higher PB in the thickness of thin film, $0.92{\mu}m$. It was meant to represent higher PB in the thickness of the film that was made closely the optimal thickness, $0.96{\mu}m$. The optimal thickness of thin film, $0.96{\mu}m$ was calculated by the penetration depth of the pumping light Also, the PB in thickness of $0.92{\mu}m$ was obtained almost two times higher 0.15 than other thickness of thin films.

• 한국전기전자재료학회논문지
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• 제14권1호
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• pp.58-63
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• 2001

We have investigated the photoinduced birefrinence by the electric field effects in chalcogenide thin films. The electric field effects have investigated the various applied bias voltages(forward and reverse) in chalcogenide thin films. A pumping (inducing) and a probing bean were using a linearly polarized He-Ne laser light (633nm) and semiconductor laser light (780nm), respectively. The result was shown that the birefringence had a higher value in DC +2V than the others, Also, we obtained the birefringence in the electric field effects by various voltages. In addition, we have discussed the anisotropy property of chalcogenide thin films by the electric field effects.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.139-144
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• 2001

In this study, we have investigated the photoinduced birefringence of Ag plarized-photodoping in double-layer of Ag doped chalcognide thin films and dependence of polarization states in chalcogenide thin films. Also, we have investigated the polarization dependence of photoinduced birefringence and the anisotropy of absorption in an amorphous As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ chalcogenide thin films using two 632.8nm He-Ne lasers, which have a smaller energy than the optical energy gap (E$\sub$OP/) of the film, i.e., an exposure of sub-bandgap light (hν$\sub$op/). The photoinduced phenomena of Ag polarized-photodooping increasing the linear dichroism(d), about 84% and birefringence(Δn), about 23%. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.419-421
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• 2000

In this study, we observed the photoinduced birefringence of Ag polarized-photodoping in chalcogenide thin film and the double-layer of Ag doped chalcogenide thin film using the irradiation with the polarized He-Ne laser light. The photoinduced birefringence of Ag polarized-photodoping results in increasing the sensitivity of linearly anisotropy intensity and birefringence(${\Delta}n$). The Ag polarized-photodoping shows improvement of the photoinduced anisotropy property, in polarized photodoping of the chalcogenide thin film. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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• pp.148-149
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• 2000

유기 고분자는 기존 무기물질의 한계성을 감안해 볼 때, 전기 및 광학적 특성이 우수하여 이에 대한 연구가 매우 활발히 진행되고 있다. 이중에서 Azo 화합물은 특별한 물리적, 광학적 성질과 그 잠재적인 응용성 때문에 계속해서 지금도 많은 관심을 끌고 있다. 그래서 Azo 화합물은 액정과 함께 비선형 광학성질을 가지는 물질에 응용될 수 있으며, 또한 광 유도현상의 이색성(dichroism)및 복굴절(birefringence) 현상 같은 특성을 나타내고 있다.$^{l)2)3)}$ 선형 광학 실험중에서 단순 입사 방법$^{4)}$ 을 이용하여 전기 광학 계수를 측정하였으며, 다시 확장 지수함수(stretched exponential)모델$^{5)}$ 로써 극화(poling)와 완화(relaxation)의 꼴을 보았다. (중략)

• E2M - 전기 전자와 첨단 소재
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• 제2권2호
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• pp.117-126
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• 1989

9/65/35 PLZT 세라믹을 그레인 크기에 따라 2단소성법으로 제조하여 그 전기적, 광학적특성을 관찰하고 횡모드 복굴절방식의 반사형 디스플레이소자를 제작하여 그 동작특성을 조사하였다. P-E곡선은 슬림형의 히스테리시스를 타나냈으며 그레인이 커질수록 유기분극과 광투과율은 증가하지만 복굴절율은 감소하여 디스플레이소자 구동시 콘트라스트 비가 감소 하였다. 디스플레이소자의 동작개시 전압은 1mm전극 간격에서 300V이고, $V_{(CR.Max)}$ 전압은 550V였으며 가시각도에 따른 콘트라스트 비의 비율((60.deg./90.deg.), $G_{S}$:4.mu.m)은 0.67이었다.다.

• 전자공학회논문지D
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• 제34D권4호
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• pp.73-78
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• 1997

A polymeric waveguide TE-pass polarier operating at wavelengths around 1.55.mu.m is realized by utilizing the birefringence induced by photoleaching at room temperature. To implement the polarizer, the photobleached waveguide supporting only TE mode is integrated in the middle of the etched rib waveguide that supports TE and TM modes. It has a simple structure and requires no high temperature process like poling. The measured polarization extinction ratio is about 21dB and the estimted excess loss is about 0.4dB.