• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.287-287
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• 2011

동시 계수 도플러 넓어짐 양전자 소멸 분광법으로 n, p형 Cz-Si의 시료에 양성자를 0, 4 MeV 에너지와 조사량의 변화에 의한 결함을 측정하였으며, 고체 구조 특성에 대하여 조사하였다. 양전자와 전자의 쌍소멸로 발생하는 511 keV 감마선 스펙트럼의 수리적 해석 방법인 S-변수와 W-변수를 사용하여, 구조 변화를 측정하였다. 양성자 조사에너지의 세기에 따라 결함이 증가하였으며, 양성자의 조사량의 변화에 대하여는 큰 변화가 없었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제6권3호
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• pp.360-367
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• 1996

The OISF (Oxidation Induced Stacking Fault)is expected to affect the electrical properties in Si single crystals, and the nuclei of OISF are believed to be formed during the crystal growing process. Initial oxygen concentration, dopant type and its density, and cooling rate are regareded as major factors on OISF formation. In this study, the variations of OISF density under various cooling rate were investigated. Si single crystal was heated to $1400^{\circ}C$ in Ar ambient and cooled down to room temperature at different cooling rate, using horizontal tube furnace. After that, they were oxidized at $1150^{\circ}C$, and then, OISF was observed with optical microscope. The relation between oxide procipitates and OISF nucleation was investigated by FTIR analysis. As a result, it was found that there exists the intermediate cooling rate range in which OISF nucleation is highly enhanced. And also, it was found that OISF nucleation is closely related with silicon oxide procipitation in Si single crystals.

• Geophysics and Geophysical Exploration
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• 제3권3호
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• pp.94-100
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• 2000

Many nondestructive test methods used for metallic materials have some limit in application to concrete materials due to their heterogeneity. Impact echo method utilizes the resonance frequency of reflected seismic waves from defects or the boundary between two materials and can be applied to investigate the interior of concrete structures. In this study, a field data acquisition system for the impact echo method was assembled and field tests under various conditions were performed. The impact echo method was applied for investigating thickness/defects/backfilling of concrete structures/tunnel lining/airport pavement. The applicability of the impact echo method to the civil engineering field was substantiated by providing results within $10\%$ errors.

• Journal of the Korean Vacuum Society
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• 제22권6호
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• pp.341-347
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• 2013

The n-type and p-type silicon samples were exposed by 40.0, 3.98 MeV proton beams ranging between 0 to $20.0{\times}10^{13}protons/cm^2$. Coincidence Doppler Broadening Positron Annihilation Spectroscopy (CDBPAS) were applied to study of defect characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the gamma spectrum and the total counts of whole gamma spectrum. The S-parameter values strongly depend on the irradiated proton beam that indicated the defects generate more, rather than the energy intensity. 40 MeV irradiated proton beam in the n-type silicon at $20.0{\times}10^{13}protons/cm^2$ was larger defects than 3.98 MeV irradiated proton beam. It was analysis between the proton irradiation beams and the proton intensities of the irradiation. Because of the Bragg peak, SRIM results shows mainly in a certain depth of the sample to form the defect by the proton irradiation, rather than the defects to appear for the entire sample.

• Applied Microscopy
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• 제36권3호
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• pp.155-163
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• 2006

The defects in a synthesized crystal of ${\alpha}-Al_2O_3$ used as substrate for growing of semi-conductor materials such as GaN were examined by the conventional transmission electron microscopy (TEM), Large Angle CBED and High-Angle Annular Dark Field (HAADF) STEM methods. The dominant defects found in the specimen are basal microtwins with the thickness of ${\sim}2\;to\;32 nm$ and the associated strong strain field at the interface of microtwin/matrix, basal dislocations and complex dislocations in the one of {$2\bar{1}\bar{1}3$} pyramidal slip plane. All these basal and pyramidal dislocations seem to be strong related to basal microtwins. It was also found that the density of defects is very uneven. In the certain area with the dimension of a few fm, the dislocation density is quite high as an order of ${/sim}10^{10}/cm^2, but the average density is roughly estimated to be less than ${\sim}10^5/cm^2, as is usually expected in general synthesized crystals.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.55.1-55.1
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• 2011

의료용 고속 에어터빈 핸드피스는 주로 치과에서 치아 절삭 및 치료에 사용하는 도구로써 치의학 분야에서 가장 폭넓게 사용되는 의료장비 중 하나이다. 핸드피스용 소재는 황동 혹은 스테인레스 강이 주로 사용되었으나, 최근 고내식성, 인체친화성이 높은 티타늄을 사용한 가벼운 재질의 핸드피스 제품들이 개발되어 독일 및 일본을 중심으로 출시되고 있다. 티타늄으로 제조되는 부분은 헤드와 바디로써, 본 연구에서는 에어터빈의 케이스에 해당하는 헤드부 제조에 있어서 정밀주조 공정 적용의 타당성을 조사하였다. 티타늄은 특히 용융점이 높고 유동성이 좋지 않을 뿐만 아니라 주형과의 반응성이 높기 때문에 주조 시 제품 내/외 부에 결함발생 빈도가 높다. 이와 같은 주조결함 제어를 위하여 상용 유한요소 프로그램인 ProCASTTM을 사용하여 핸드피스 헤드 제조 시 유동 및 응고해석을 수행하였다. 또한 헤드 부 형상에 따른 주조성을 조사하여 이를 바탕으로 최적 주조방안 도출을 위한 정밀주조 공정해석 연구를 수행하였다.

• Journal of the Korean Ceramic Society
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• 제38권1호
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• pp.56-60
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• 2001

90.24 mol% ZrO$_2$-5.31 mol% $Y_2$O$_3$-4.45 mol% Nb$_2$O$_{5}$ 조성의 (Y,Nb)-TZP와 (Y,Nb)-TZP/Al$_2$O$_3$복합체를 155$0^{\circ}C$~1$600^{\circ}C$에서 1~2시간 소결하여 제조하였다. 시편의 결함에 대한 저항성을 조사하기 위하여 R-curve, Weibull modulus, slow crack growth 변수 등을 조사하였다. 실험결과, (Y,Nb)-TZP와 (Y,Nb)-TZP/Al$_2$O$_3$복합체 모두 상용 3Y-TZP 보다 우수한 결함 저항성이 관찰되었다. (Y,Nb)-TZP/Al$_2$O$_3$복합체의 결함 저항성은 $Al_2$O$_3$첨가에 의한 결정립 가교 인화, 분산강화, R-curve 효과에 의한 것으로 추정된다.

• Journal of the Korean Vacuum Society
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• 제13권1호
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• pp.14-21
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• 2004

It is essential to increase the switching speed of power devices to reduce the energy loss because high frequency is commonly used in power device operation these days. In this work electron irradiation has been conducted to reduce the lifetime of minority carriers and thereby to increase the switching speed of a$p^+- n^-$ junction diode. Effects of electron irradiation on the electrical properties of the diode are reported The switching speed is effectively increased. Also the junction leakages and the forward voltage drop which are anticipated to increase are found to be negligible in the $p^+- n^-$ junction diodes irradiated with the optimum energy and dose. The analysis results of DLTS and C-V profiling indicate that the defects induced by electron irradiation in the silicon substrate are donor-like ones which have the energy levels of 0.284 eV and 0.483 eV. Considering all the experimental results in this study, it might be concluded that electron irradiation is a very useful technique in improving the switching speed and thereby reducing the energy loss of $p^+- n^-$ junction diode power devices.

• Journal of Korea Multimedia Society
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• 제14권6호
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• pp.766-774
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• 2011

We survey the software faults according to the software characteristics, so we can use it to make a software testcases. We divide the software fault according to six characteristics, functionality, usability, reliability, efficiency, maintainability, and portability. We analyze the software faults to find the common factors according to the software products, also we survey the number of faults according to six characteristics. We propose the method of weight application using the relative comparison of the number of faults.

• The Journal of the Korea institute of electronic communication sciences
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• 제14권3호
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• pp.513-518
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• 2019

The non-destructive testing equipment using an eddy current was developed to check for defect in the vehicle transmission component. A defect master sample was made to test all types of defects that occur in the component and also an eddy current detector was manufactured and used to test and detect all kinds of defects. In addition, testing was held against the actual defective items to investigate the cause and type of defects, and a comparative study was conducted based on results from the examination. The software system of the eddy current detector was developed so that even a non-specialist can make assessment of detect in the component from the test results displayed on the monitor.