• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.110-116
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• 2005

Suitable compositions which are sinterable at low temperature in the $BaO-B_{2}O_{3}-ZnO$ glass system were investigated as a function of the ratio between BaO and ZnO. The effect of $Al_{2}O_3$ filler on densification and physical characteristics of the glass was also examined. When the amount of $Al_{2}O_3$ filler increased, the densification rate and the values of dielectric constant, thermal expansion coefficient and hardness in the glass-filler composites decreased gradually. The decreasing rate of the physical properties accelerated when fine $Al_{2}O_3$ filler was used. However, the fracture toughness of the composite rather increased due to the existence of filler particles and pores which effectively suppressed crack propagation with addition of fine $Al_{2}O_3$ filler.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.504-504
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• 2011

최근 디지털 프린팅 기술의 핵심기술로 떠오르고 있는 잉크젯 프린팅 기술은 최근 기존의 문서인쇄 뿐 아니라, 직물 인쇄, 태양전지 등의 다양한 반도체 소자 제조에 널리 활용되고 있으며, 점차 그 응용 분야를 넓혀가고 있다. 특히 thermal 방식의 잉크젯 피린팅 기술은 etching, thin film process, lithography등의 반도체 공정 기술을 이용하여 제작할 수 있기 때문에, 현재 잉크젯 프린팅 기술은 대부분 thermal 방식을 체택하고 있다. 이러한 thermal 잉크젯 프린팅 방법에서는 잉크를 토출시키기 위하여, 전기적 에너지를 열에너지로 전환하는 전자저항막층이 필수적으로 필요하게 되는데, 이러한 전자저항막층은 수백도가 넘는 고온 및 잉크와 접촉으로 인한 부식 및 산화 문제가 발생할 수 있는 열악한 환경에서 사용되므로, Ta, SiN과 같은 보호층을 필수적으로 필요로 한다. 그러나 최근 잉크젯 프린터의 고해상도 고속화, 대면적 인쇄성 등과 같은 다양한 요구 증가에 따라, 잉크젯 프린터의 저전력 구동이 이슈로 떠올라 열효율에 방해가 되는 보호층을 제거할 필요성이 제기되고 있다. 지금까지는 Poly-Si, $HfB_2$, TiN, TaAl, TaN _0.8 등의 물질들이 잉크젯 프린터용 전자저항막 물질로 연구되거나 실제로 사용되어져 왔으나, 이러한 물질들을 보호층을 제거하는 경우 쉽게 산화되거나, 부식되는 문제점을 가지고 있다. 따라서, 기존 전자저항막의 기능을 만족시키면서, 산화나 부식에 대한 강한 내성을 가져 보호층을 제거하더라도 안정적으로 구동이 가능한 하이브리드 기능성(히터 + 보호층)을 가지는 잉크젯 프린터용 전자저항막 물질의 개발이 시급한 실정이다. 본 연구에서는 자기조립특성을 가져 정밀제어가 가능한 원자층증착법(Atomic Layer Deposition)을 이용하여 원자/나노 단위의 미세 구조 컨트롤을 통해 내열 내산화 내부식성 저온도저항계수를 동시에 가지는 다기능성 전자저항막을 설계 및 개발하고자 하였다. 전자저항막 개발을 위하여 우수한 내부식 내산화성을 가지고 결정립 크기에 따른 온도저항계수 조절이 가능한 platinum group metal들과 전기 저항 및 내열성 향상을 위한 물질의 복합구조막을 원자증증착법으로 증착하였다. 또한, 전자저항막 증착시 미세구조와 공정 변수가 내부식성, 내산화성, 그리고 온도저항계수에 미치는 영향을 체계적으로 연구하여, proto-type의 inkjet printhead를 구현하였다.

• Applied Chemistry for Engineering
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• v.17 no.1
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• pp.12-15
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• 2006

The purpose of this study was to investigate the effect of reaction conditions, solvents, and surfactants on the average size and size distribution of silica particles in preparing silica fine powders by sodium silicate. Silica fine particles were synthesized by varying kinds of solvents and surfactants using the emulsion method. Span 20, Span 40, Span 60, and Span 80 were used as nonionic surfactants, Dispersing solvents were n-Hexane, n-Heptane, iso-Octane, and n-Decane of the alkane group. In these experiments, it was known that the optimum dispersion stirring time to form the emulsion of the constant size was around 6 min. The mean sizes of silica particles, at a variety of the dispersion stirring speeds, decreased as the dispersion stirring speed increased. Also, in the case of the solvents, the size of the formed silica particles decreased when the molecular weight of the solvent increased. Lastly, in the case of the surfactants, the mean size of silica particles increased as the hydrophobic lipophilic balance (HLB) value of the surfactant decreased.

• Economic and Environmental Geology
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• v.50 no.1
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• pp.27-34
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• 2017

Mineral carbonation for the storage of carbon dioxide is a CCS option that provides an alternative for the more widely advocated method of geological storage in underground formation. Carbonation of magnesium- or calcium-based minerals, especially the carbonation of waste materials and industrial by-products is expanding, even though total amounts of the industrial waste are too small to substantially reduce the $CO_2$ emissions. The mineral carbonation was performed with steelmaking reduction slag as starting material. The steelmaking reduction slag dissolution experiments were conducted in the $H_2SO_4$ and $NH_4NO_3$ solution with concentration range of 0.3 to 1 M at $100^{\circ}C$ and $150^{\circ}C$. The hydrothermal treatment was performed to the starting material via a modified direct aqueous carbonation process at the same leaching temperature. The initial pH of the solution was adjusted to 12 and $CO_2$ partial pressure was 1MPa for the carbonation. The carbonation rate after extracting $Ca^^{2+}$ under $NH_4NO_3$ was higher than that under $H_2SO_4$ and the carbonation rates in 1M $NH_4NO_3$ solution at $150^{\circ}C$ was dramatically enhanced about 93%. In this condition well-faceted rhombohedral calcite, and rod or flower-shaped aragonite were appeared together in products. As the concentration of $H_2SO_4$ increased, the formation of gypsum was predominant and the carbonation rate decreased sharply. Therefore it is considered that the selection of the leaching solution which does not affect the starting material is important in the carbonation reaction.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.143-144
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• 2010

3-5족 화합물 반도체를 이용한 집광형 삼중 접합 태양전지는 40% 이상의 광변환 효율로 많은 주목을 받고 있다[1]. 삼중 접합 태양전지의 하부 셀은 기계적 강도가 높고 장파장을 흡수할 수 있는 Ge이 사용된다. Ge위에 성장될 III-V족 단결정막으로서 Ge과 격자상수가 일치하는 GaInP나 GaAs가 적합하고, 성장 중 V족 원소의 열확산으로 인해 Ge과 pn접합을 형성하게 된다. 이때 GaInP의 P의 경우 GaAs의 As보다 확산계수가 낮아 태양전지 변환효율향상에 유리한 얇은 접합 형성이 가능하고, 표면 에칭효과가 적기 때문에 GaInP를 단결정막으로 선택하여 p-type Ge기판 위 성장으로 단일접합 Ge구조 제작이 가능하다. 하지만 이종접합 구조 성장으로 인해 발생한 계면사이의 전위나 미세결함들이 결정막내부에 존재하게 되며 이러한 결함들은 광학소자 응용 시 비발광 센터로 작용할 뿐 아니라 소자의 누설전류를 증가시키는 원인으로 작용하여 태양전지 변환효율을 감소시키게 된다. 이에 결함감소를 통해 소자의 전기적 특성을 향상시키고자 수소 열처리나 플라즈마 공정을 통해 수소 원자를 박막내부로 확산시키고, 계면이나 박막 내 결함들과 결합시킴으로서 결함들의 비활성화를 유도하는 연구가 많이 진행되어 왔다 [2][3]. 하지만, 격자불일치를 갖는 GaInP/Ge 구조에 대한 수소 열처리 및 불순물 준위의 거동에 대한 연구는 많이 진행되어 있지 않다. 따라서 본 연구에서는 Ga0.45In0.55P/Ge구조에 수소 열처리 공정을 적용을 통하여 단결정막 내부 및 계면에서의 결함밀도를 제어하고 이를 통해 태양 전지의 변환효율을 향상시키고자 한다. <111> 방향으로 $6^{\circ}C$기울어진 p-type Ge(100) 기판 위에 유기금속화학증착법 (MOCVD)을 통해 Si이 도핑된 200 nm의 n-type GaInP층을 성장하여 Ge과 단일접합 n-p 구조를 제작하였다. 제작된 GaInP/Ge구조를 furnace에서 250도에서 90~150분간 시간변화를 주어 수소열처리 공정을 진행하였다. 저온 photoluminescence를 통해 GaInP층의 광학적 특성 변화를 관찰한 결과, 1.872 eV에서 free-exciton peak과 1.761 eV에서 Si 도펀트 saturation에 의해 발생된 D-A (Donor to Acceptor)천이로 판단되는 peak을 검출할 수 있었다. 수소 열처리 시간이 증가함에 따라 free-exciton peak 세기 증가와 반가폭 감소를 확인하였고, D-A peak이 사라지는 것을 관찰할 수 있었다. 이러한 결과는 수소 열처리에 따른 단결정막 내부의 수소원자들이 얕은 불순물(shallow impurity) 들로 작용하는 도펀트들이나, 깊은 준위결함(deep level defect)으로 작용하는 계면근처의 전위, 미세결함들과의 결합으로 결함 비활성화를 야기해 발광세기와 결정질 향상효과를 보인 것으로 판단된다. 본 발표에서는 상술한 결과를 바탕으로 한 수소 열처리를 통한 박막 및 계면에서의 결함준위의 거동에 대한 광분석 결과가 논의될 것이다.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.850-857
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• 1995

VO$_{x}$ and V$_{1-x}$ Sn$_{x}$O$_2$thin films were fabricated on a glass under various $O_2$pressure by reactive e-beam evaporation method. Thermochromism and transition temperatures of these thin films were examined by measuring spectral solar transmittances with spectrophotometer at various temperatures, and their stoichiometries were analyzed by RBS. Oxygen pressure of 5$\times$10$^{-5}$ . Torr was found to be optimum to fabricate near stoichiometric VO$_2$thin film by reactive e-beam evaporation. Rapid thermal annealing(RTA) was adopted to crystallize the thin films and annealing at 40$0^{\circ}C$ ~45$0^{\circ}C$ for 20 ~ 30 seconds was found to be the optimum annealing condition for the crystallization of VO$_2$thin film of 100nm-300nm thickness. 1~6 atomic percent of Sn was doped into VO$_2$thin films to fabricate V$_{1-x}$ Sn$_{x}$O$_2$thin films. These V$_{1-x}$ Sn$_{x}$O$_2$thin films showed distinct thermochromism and significantly higher transition temperatures than VO$_2$thin film.

• Korean Journal of Mineralogy and Petrology
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• v.33 no.1
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• pp.1-10
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• 2020

The atomic structures of silicate liquids at high pressure provide insights into the transport properties including thermal conductivities or elemental partitioning behavior between rocks and magmas in Earth's interior. Whereas the local electronic structure around silicon may vary with the arrangement of the nearby oxygens, the detailed nature of such relationship remains to be established. Here, we explored the atomic origin of the pressure-induced changes in the electronic structure around silicon by calculating the partial electronic density of states and L₃-edge X-ray absorption spectra of SiO₂ polymorphs. The result showed that the Si PDOS at the conduction band varies with the crystal structure and local atomic environments. Particularly, d-orbital showed the distinct features at 108 and 130 eV upon the changes in the coordination number of Si. Calculated Si XAS spectra showed features due to the s,d-orbitals at the conduction band and varied similarly with those observed in s,d-orbitals upon changes in the crystal structures. The calculated Si XAS spectrum for α-quartz was analogous to the experimental Si XRS spectrum for SiO₂ glass, implying the overall similarities in the local atomic environments around the Si. The edge energies at the center of gravity of XAS spectra were closely related to the Si-O distance, thus showing the systematic changes upon densification. Current results suggest that the Si L_2,3-edge XRS, sensitive probe of the Si-O distance, would be useful in unveiling the densification mechanism of silicate glasses and melts at high pressure.

• Resources Recycling
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• v.27 no.2
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• pp.38-47
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• 2018

Integrated gasification combined cycle (IGCC) is a next generation energy production technology that converts coal into syngas with enhanced power generation efficiency and environmental performance. IGCC produces almost coal gasification slag as the solid by-product. IGCC slag is generated about 140,000 tons for a year although recycling of it is still in the early stages. We evaluated the potential of IGCC slag which is generated from a pilot plant in South Korea as an alkali-activated cement. Samples which were activated with the combined activator of sodium silicate solution and caustic soda had an average compressive strength of 4.5 MPa, showing expansion. Expansion of the alkali-activated slag was presumed to be caused by free CaO in the slag, although it was not detected by the ethylene glycol method. Samples that were activated with the combined activator of sodium aluminate and caustic soda had an average compressive strength of 10 MPa. Hydroxy sodalite and $C_3AH_6$ were found to be the new crystalline phases. IGCC slag can be used as an alkali-activated material, but the strength performance should be improved with proper mix design approach to calculate optimum proportions which can alleviate the expansion issue at the same time.

• The Journal of the Petrological Society of Korea
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• v.16 no.2 s.48
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• pp.59-72
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• 2007

Kilauea volcano located in the southern part of Hawaii island chains has been formed by continuous and sporadic eruption activities from 16 century to September of 1982. Kilauea volcano was investigated from collecting the samples of basalt to identify the geochemical characteristics of the lavas. Olivine, clinopyroxene, plagioclase, and opaque minerals with glass groundmass are observed. Clinopyroxene formed glomerophopyritic texture with plagioclase and zoning texture was observed in some of plagioclase phenocrysts. Major elements such as $K_2O$, $P_2O_5$, $TiO_2$ increased with respect to MgO. $Al_2O_3$ and CaO show the kink on Marker diagram due to the crystal fractionation of plagioclase and clinopyroxene with plagioclase respectively. Olivine has a wide range of Fo% ranging from 60 to 90, and MnO and FeO in the olivine are decreased with increasing Fo% oppositely increased $SiO_2$, MgO, and NiO. Ni in the whole rock is controlled not only by the mode of olivine but also by the Ni abondance in the olivine.

• Journal of the Korean Vacuum Society
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• v.19 no.6
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• pp.475-482
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• 2010

Polycrystalline NiO thin films were deposited on glass substrate by RF magnetron sputtering using only Ar as a plasma sputter gas. based on the analysis of x-ray diffraction (XRD), NiO films had a polycrystalline cubic (NaCl type) structure. NiO thin films grown below and above $200^{\circ}C$ showed preferred orientation of (111) and (220) respectively. It showed colossal change in electrical resistivity as much a ${\sim}10^7$ order form an insulating state of $105\;{\Omega}cm$ below $200^{\circ}C$ to a conducting state of $10^{-2}{\sim}10^{-1}\;{\Omega}cm$ above $300^{\circ}C$ such a Mott metal-insulator transition (MIT) in polycrystalline.