• Journal of KIISE:Software and Applications
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• v.28 no.1
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• pp.46-51
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• 2001

2D로 확장한 HMM은 다수 제안되었지만 엄밀한 의미에 있어서 2D HMM이라고 하기에 부족한 점이 많다. 본 논문에서는 기존의 랜덤 필드 모형이 아닌 새로운 2D HMM을 제안한다. 상하 및 좌우 방향의 causal chain 관계를 가정하고 완전한 격자 형성 조건을 두어 2D HMM의 평가, 매개 변수를 추정하는 알고리즘을 제시하였다. 각각의 알고리즘은 동적 프로그래밍과 최우 추정법에 근거한 것이다. 변수 추정 알고리즘은 반복적으로 이루어지며 국소 최적치에 수렴함을 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.91-94
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• 1988

This paper is investigated on the diffraction grating formation of the amorphous As-Se-S-Ge films. AS$\_$40/Se$\_$15/S$\_$36/Ge$\_$10/ film of thickness 0.76 $\mu\textrm{m}$ has achieved a high diffraction efficiency of 4.6%. In this film, high diffraction efficiency is increased to 18% by chemical etching.

• Proceedings of the Materials Research Society of Korea Conference
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• 2004.05a
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• pp.57-57
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• 2004

• Proceedings of the KSEEG Conference
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• 2003.04a
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• pp.135-138
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• 2003

대부분의 제4기단층은 제3기 단층이 재활동한 것들로써, 신기 조구조적 단층 여부를 규명하려면, 제4기에 형성된 단구(段丘, Terrace)의 변위가 수반 증명되어야한다. 대표적인 단층은 읍천단층과 수렴단층을 들 수 있다. 특히 읍천단층은 기반암단층으로 언급될 경우에는 읍천 단층이라 하고, 제4기에 재활동한 부분을 거론할 경우에는 제4기 읍천단층이라고 구분하여 혼란을 피하도록 하였다. (중략)

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.133-133
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• 2010

3-5족 화합물 반도체를 이용한 집광형 삼중 접합 태양전지는 35% 이상의 광변환 효율로 주목을 받고 있다. 일반적으로 삼중 접합 태양전지는 넓은 영역대의 파장을 흡수하기 위해 밴드갭이 다른 InGaP, GaAs, Ge이 사용된다. 그 중 하부셀은 기계적 강도가 높고 장파장을 흡수할 수 있는 Ge이 사용되는데, p-type Ge 기판위에 III-V 결정막 성장 시 5족 원소가 확산되어 pn접합을 형성하게 된다. 이러한 구조를 가진 Ge 하부셀이 효율적으로 홀-전자 쌍을 형성하기 위해서는 두꺼운 베이스와 얇은 에미터 접합이 필요하다. InGaP의 phosphorus는 낮은 확산계수로 인해 GaAs의 arsenic에 비해 얇은 접합이 형성 가능하며, Ge표면 에칭효과가 더 적다는 장점이 있다. 이를 고려해 우리 연구그룹에서는 metalorganic chemical vapor depostion(MOCVD)을 이용하여 Ge기판위에 성장한 InGaP layer의 특성을 관찰해 보았다. <111>로 $6^{\circ}$ 기울어진 p-type Ge(100) 기판위에 MOCVD를 통해 InGaP layer를 형성하였고, 성장된 layer를 atomic force microscope(AFM)와 high-resolution x-ray diffraction(HRXRD)을 이용하여 표면형상, 조성, 응력상태 등을 각각 관찰하였다. 또한 phosphorus 확산에 의해 형성되는 도핑농도는 electrochemical capacitance-voltage(ECV)을 이용하여 관찰하였다. 성장된 Ge기판위의 InGaP layer의 경우 특징적으로 높이 50 nm, 밑변 길이 $1\;{\mu}m$의 경사진 표면을 관찰할 수 있었으며, 이러한 구조는 TMIn과 TMGa의 비율이 증가 할수록 감소하였다. 따라서 이러한 경사진 형태의 구조는 격자 불일치 때문인 것으로 판단된다. 추가적으로 V/III ratio의 최적화를 통해 1.3 nm의 표면 거칠기를 갖는 InGaP layer를 얻을 수 있었다. ECV를 통해 Ge 하부셀의 pn접합 형성을 관찰한 결과 약 160 nm에서 접합이 형성되는 것을 관찰할 수 있었다. 또한, 같은 성장 조건의 샘플을 1000 초 열처리 후에 접합깊이의 변화를 관찰한 결과 180 nm에서 접합이 관찰되었지만, GaAs의 arsenic에 의한 pn접합은 열처리 후에 그 깊이가 170 nm에서 300 nm로 증가 하였다. 따라서 삼중접합 태양전지의 제작 공정을 고려할 경우 phosphorus에 의한 접합 형성이 Ge 하부셀의 동작 특성에 유리할 것으로 판단된다.

• Applied Microscopy
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• v.39 no.2
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• pp.73-80
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• 2009

The plastid inclusion has long been known to exist in leaves of numerous plant species, especially in those of flowering plants. Among the inclusions, crystalline bodies are the most frequently distinguished structures of the foliar plastids, however, microtubules and phytoferritins are also reported occasionally. The crystalline inclusions vary in shape, and are located either in the stroma or within intrathylakoidal spaces, whereas microtubules and phytoferritins are more uniform in shape and are formed in the stroma. In crystalline structures, the composing elements exhibit a lattice pattern and/or paralleled tubules that are either bounded by membranes or exist without membrane enclosing. Other types of inclusions have not been shown to be enclosed by any membranous structures. According to the current survey, the plastid inclusion, with the exception of phytoferritins, has been shown to exhibit a crystalline or tubular pattern, and has been reported in more than 56 species of various families. Their occurrence is not restricted to any photosynthetic pathway, but is found to be randomly distributed among C-3, C-4 and CAM species, without phylogenetic relationships. The progress in plastid inclusion research reveals more information about the function and complexity, but the need for characterizing the 3-D structure of the crystalline inclusions also has been acknowledged in previous studies. A 3-D characterization would utilize tilting and tomography of serial sections with appropriate image processing that would provide valuable information on the sub-structures of the crystalline inclusions. In fact, recent studies performed on 3-D reconstruction of the plastid inclusions revealed important information about their comprising elements. In this article, the crystals and microtubules that have been reported in various types of plastids have been reviewed, with special consideration given to their possible sub-cellular function within the plastids.

• Polymer(Korea)
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• v.33 no.4
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• pp.297-306
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• 2009

A homologous series of side chain liquid crystalline polymers, poly [1-{4-(4'-cyanophenylazo)phenoxyalkyloxy}ethylene]s(CAPETn, where n, the number of methylene units in the spacer, is $2{\sim}10$) were synthesized from poly(vinyl alcohol) and 1-{4-(4'-cyanophenylazo)phenoxy}alkylbromides(CAPBn, n=$2{\sim}10$), and their thermotropic liquid crystalline phase behaviors were investigated. The CAPBn with n of $2{\sim}5$ did not show any liquid crystalline behavior, while those with n of 6 and $7{\sim}10$ showed enantiotropic and monotropic nematic phases, respectively. In contrast, among the CAPETn polymers, only CAPET5 exhibited an enantiotropic nematic phase, while other polymers showed monotropic nematic phases. The isotropic-nematic transition temperatures of CAPETns and their entropy variation at the phase transition that were higher values than those of CAPBns, demonstrated a typical odd-even effect as a function of n. These phase transition behaviors were disscussed in terms of the 'virtual trimer model' by Imrie. The mesophase properties of CAPETns were largely different from those reported for the polymers in which the (cyanophenylazo) phenoxy groups are attached to polyacrylate, polymethacrylate, and polystyrene backbones through polymethylene spacers. The results indicate that the mode of chemical linkage of the side group with the main chain plays an important role in the formation, stabilization, and type of mesophase.

• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.163-167
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• 2008

The electronic structure and magnetism of superlattice systems consisted of Heusler compound $Co_2MnSi$ (CMS) and zinc-blende MnAs (MA) are investigated by means of the all-electron full potential linearized augmented plane wave method within the generalized gradient approximation. Four superlattice systems are considered, that is CMS(m)/MA(n), where m and n, being either 2 or 4, denote the number of alternatingly arrayed layers of the compounds in a superlattice along [001] direction. From the calculated total magnetic moments as well as the total density of states, it is found that neither of the four systems is half-metallic. It is also found that the Mn atoms are antiferromagnetically coupled in the systems of CMS2/MA2 and CMS2/MA4. The total and atom-resolved density of states of the four superlattices are compared with those of the bulk $Co_2MnSi$ and MnAs, and the influences of the change in the systems symmetry on the magnetism and half-metallicity are discussed.

• Tunnel and Underground Space
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• v.17 no.5
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• pp.350-359
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• 2007

Most large cut slopes of open pit mines, roadways, and railways are steeply inclined and composed with rocks that do not contain soils. However, these rock slopes suffer both weathering and fragmentation. In the case of steep slopes, falling rock and collapse of a slope may often occur due to surface erosion. Cast-in place concrete and rubble work are the most widely used earth structure-based pressure supports that act as restraints against the collapse of the rock slope. In order to overcome the shortcomings of conventional retaining walls, a segmental grid retaining wall is being used with connects precasted segments to construct the wall. In this study, laboratory model test was conducted to estimate deformation behavior of segmental grid retaining wall with configuration of rear strecher, height and inclination of the wall. In order to examine the behavior characteristics of a segmental grid retaining wall, this research analyzes the aspects of spacial displacement through relative displacement according to change in the inclination of the wall. Also, the walls behavior according to the formation and status of the rear stretcher which serves the role of transferring the load from the header and the stretcher which make up the wall, the displacement of backfill materials in the wall, and the location of the maximum load were surveyed and the characteristics of displacement in the segmental grid retaining wall were observed. The test results of the segmental grid retaining wall showed that there was a sudden increase in failure load according to the decrease in the wall's height and the size of the in was greatly decreased. Furthermore, it revealed that with identical inclination and height, the structure of the rear stitcher did not greatly affect the starting point or size of maximum horizontal displacement, but rather had a stronger effect on the inclination of the wall.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.558-562
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• 1999

For 6H-SiC crystals which was obtained by sublimation growth, the formation of micropipes and internal planar defects was discussed in consideration of the inter-relationship between mass adsorption behavior and the defects origin on the growth interface on the basis of KSV theory and the the step growth pattern on the vicinal plane. Micropipes and planar defects was formed in the region which the step could not be grown by impurities impinging. It was realized that the internal defects formation was related to the crystallographic step planes formed on the growth interface and the migration of the molecules adsorbed on it.