• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.2
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• pp.379-385
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• 2017

In general, distribution board, panel board and motor control center can be installed over a wide area such as residence of group, building, schools, factories, ports, airports, water service and sewerage, substation and heavy industries that are used to supply converts the voltages extra high voltage into optimal voltage. There are electrical accidents due to rise of contact temperature, loose contact between busbar, deterioration of the contact resistance, over temperature of the busbars. In this paper, we designed and implemented the busbar joint and temperature measurement system, which can measure the joint resistance of busbar and loose connection between busbar using potentiometer and non-contact infrared sensor. The experimental results show that tightening the bolt and nut is fully engaged, resistance was decreased and maximum error range was 0.1mm. Also, the experimental result showed that the temperature at the contact area is increased from $27.3^{\circ}C$ to $69.3^{\circ}C$by the contact resistance.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.2
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• pp.1348-1354
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• 2015

In this paper, chaotic circuit of the voltage controlled Lorentz system for engineering applications has been designed and implemented in an electronic circuit. The proposed circuit consists of MOS variable resistor, multipliers, capacitors, fixed resistors and operational amplifiers. The circuit was analysed by PSPICE program. PSPICE simulation results show that chaotic dynamics of the circuit can be controlled by the MOS variable resistor through time series analysis, frequency analysis and phase diagrams. Also, we implemented the proposed circuit in an electronic hardware system with discrete elements. Measured results of the circuit showed controllability of the circuit using the MOS resistor.

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.11a
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• pp.26.2-26.2
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• 2008

• The Transactions of the Korean Institute of Power Electronics
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• v.13 no.2
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• pp.103-109
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• 2008

This paper presents a new method for designing a ballast that can provide dimming control of an electrodeless fluorescent lamp. Frequency control of lamp power is inappropriate because the lamp coefficients such as equivalent impedance, coupling coefficient of the transformer, and plasma resistance are a function of lamp power. In this paper, the dimming is achieved by controlling the DC_Link voltage in relation to the lamp power. The DC_Link voltage is controlled by a buck converter. Simulation and experimental results of the proposed design method are presented in order to validate the proposed method.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.152-152
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• 2010

이종접합 태양전지에서 Intrinsic a-Si:H의 역할은 상당히 중요하다. Passivation 효과와 높은 Voc에 이르는 핵심적인 Layer이다. 본 연구는 Intrinsic a-Si:H Layer의 증착조건을 가변하여 최적의 Passivation 효과를 얻는데 목적이 있다. 웨이퍼는 n-Type $500\;{\mu}m$두께에를 사용하였다. Intrinsic a-Si:H Layer는 $SiH_4$ 가스와 $H_2$ 가스를 혼합하여 증착하게 되는데 혼합비는 1:5로 고정하였다. 증착두께는 이종접합 태양전지에서 필요한 5nm로 고정하였으며 증착장비는 PECVD를 이용하였다. PECVD는 VHF(60MHz)를 이용하였고 증착온도는 $200^{\circ}C$로 고정하여 진행하였다. 가변내용은 전극거리와 파워, 압력이다. 전극거리는 20mm에서 80mm까지 가변하였고 압력은 100mTorr에서 500mTorr까지 가변하였다. 파워는 플라즈마의 방정특성을 알아본 후 최소파워를 이용하여 증착하였다. 이는 증착 시 플라즈마에 의한 박막 손상을 최소화하기 위함이다. 측정은 QSSPC 방식으로 Carrier Lifetime과 Implied Voc를 측정하였으며 두께는 Ellipsometry를 이용하여 측정하였다. 전극거리 60mm에서 증착압력은 400mTorr이고 파워는 $14mW/cm^2$에서 가장 높은 Carrier Lifetime 과 Implied Voc를 나타내었다. Carrier Lifetime은 2.2ms이고 Implied Voc는 709mV를 달성 하였다. Carrier Lifetime이 높으면 Surface Recombination이 낮다는 의미이며 이는 고효율 이종접합 태양전지 제작에 있어서 직렬저항을 줄일 수 있는 필수적인 요소이다. Implied Voc는 이종접합 태양전지의 Voc에 직결된 인자로 이종접합 태양전지의 Voc를 예상할 수 있는 중요한 요소이다.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.12
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• pp.90-95
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• 2014

This paper presents a VHF/UHF-band variable gain low noise amplifier for multi-standard mobile TV tuners. A proposed VHF-band variable gain amplifier is composed of a resistive shunt-feedback low noise amplifier to remove external matching components, a single-to-differential amplifier with input PMOS transcoductors to improve low frequency noise performance, a variable shunt-feedback resistor and an attenuator to control variable gain range. A proposed UHF-band variable gain amplifier consists of a narrowband low noise amplifier with capacitive tuning to improve noise performance and interference rejection performance, a single-to-differential with gm gain control and an attenuator to adjust gain control range. The proposed VHF-band and UHF-band variable gain amplifier were designed in a $0.18{\mu}m$ RF CMOS technology and draws 22 mA and 17 mA from a 1.8 V supply voltage, respectively. The designed VHF-band and UHF-band variable gain amplifier show a voltage gain of 27 dB and 27 dB, a noise figure of 1.6-1.7 dB and 1.3-1.7 dB, OIP3 of 13.5 dBm and 16 dBm, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.5 s.96
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• pp.482-487
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• 2005

In this paper, we propose the control method of output impedance of each cascode unit cell of distributed amplifier by connecting varactors in the gate-terminal of common gate. Compared to common source unit cell, cascode unit cell has many advantages such as high gain and high output impedance as well as negative resistance loading. But if the transistor model which is used in design is inaccurate and process parameter is changed, oscillation sometimes can occur at band edge in which the gain start to drop. Therefore, we need control circuit which can prevent oscillation, although the circuit has already fabricated, and varactor connected to gate-terminal of common gate of cascode gain cell can play that part. Measured result of fabricated distributed amplifier shows the capability of contol of gain characteristic by adjusting of value of varactors, this can guarantee the stability of the circuit. The gain is $8.92\pm0.82dB$ over 49 GHz, the group delay is $\pm9.3 psec$ over 41 GHz. All transistor which has $0.15{\mu}m$ gate length is GaAs based p-HEMT, and distributed amplifier is put together with 4 stages.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.4
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• pp.117-128
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• 2016

Installation of earth grounding system is essential to ensure personnel safety and correct operation of electrical equipment. Earth parameters, especially, soil resistivity has to be determined in designing an efficient earth grounding system. The most common applied technique to measure soil resistance is Wenner four-point method. Implementation of this method is expensive, time consuming and cumbersome as large set of measurements with variable electrode spacing are required to obtain a one dimensional resistivity plot. It is advantageous to have a method which is of low cost and provides fast measurements. In this perspective, electrical resistance tomography (ERT) is applied to estimate subsurface resistivity profile. Electrical resistance tomograms characterize the soil resistivity distribution based on the measurements from electrodes placed in the region of interest. The nonlinear ill-posed inverse problem is solved using iterated Gauss-Newton method with Tikhonov regularization. Through extensive numerical simulations, it is found that ERT offers promising performance in estimating the three-dimensional soil resistivity distribution.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.3
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• pp.262-268
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• 2010

In this paper, a high power active tunable bandpass filter made of dielectric resonators and varactor diodes is designed using the active capacitance circuit generating negative resistance for tuning cellular TX, RX band. An active capacitance circuit's series feedback circuit using GaAs HFET whose $P_{1dB}$ is 32 dBm is used for compensating the losses from the varactor diodes of the tunable bandpass filter. The tuning elements, the varactor diodes are used as the back-to-back configuration to achieve the high power performance, The designed active capacitance circuit improves the insertion loss characteristics. The designed 2-stage active tunable dielectric bandpass filter at cellular band can cover from 800 MHz to 900 MHz. The insertion losses at 836 MHz and 881.5 MHz with 25 MHz bandwidth are 0.48 dB and 0.39 dB, respectively. The $P_{1dB}$ of the designed bandpass filter at TX and RX band are measured as 19.5 dBm and 23 dBm, respectively.

• The Transactions of the Korean Institute of Power Electronics
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• v.12 no.5
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• pp.372-377
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• 2007

This paper proposes a novel fault diagnosis method of a electrolytic capacitor used for DC-link voltage smoothing in adjustable speed drives. The equivalent series resistance (ESR) of the electrolytic capacitor is directly estimated from DC-link voltage and load currents and the status of the electrolytic capacitor is determined from the estimated ESR. To compensate the variation of the ESR owing to temperature variation, diodes are located on the same PCB near the capacitor and the temperature of the capacitor is sensed indirectly from the voltage drop of diodes. Simulation and experimental studies show the effectiveness of the proposed method.