• Journal of Power Electronics
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• 제5권1호
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• pp.62-66
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• 2005

A simple fault correction method for rotor position detection of a brushless DC(BLDC) motor with trapezoidal back EMF(electromotive force) using a Hall effect latch unit is presented. The reason why the Hall effect latch unit does not operate properly during the startup of a BLDC motor is thoroughly explained. To solve this problem, a simple code change method and its hardware implementation issues are proposed and discussed.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1181-1184
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• 2003

This paper proposes a new Sense Amplifier for MRAM. Current Sense Amplifier employs a latch-type circuit to amplify a signal from the selected memory cell. The proposed Sense Amplifier simplifies the circuit by amplifying the signal using cross-coupled PMOS transistors. It shows the same operation speed as the latch-type Sense Amplifier in simulation and occupies only 85% of the area taken by the latch-type Sense Amplifier.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 추계학술대회논문집A
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• pp.584-589
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• 2001

The latch needle cam system of circular knitting machines is analysed using multibody dynamics. A formulation is made to obtain the vertical stiffness between the needle and the cam. By implementing this formulation into data of the multibody dynamics program, the motion and the force between the needle and the cam are obtained.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1111-1113
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• 1995

To improve latch up characteristics of IGBT, this paper proposed new structure with reverse channel. IGBT proposed by this paper were designed on SOI substrate, $p^+$-substrate, and $n^+$-substrate, respectively. As a result of the simulation, we had achieved high latch up voltage and high conduction current density at IGBT with proposed structure. Latch up voltage of Conventional IGBT was 2.5V but IGBT with proposed structure was latched up at $5{\sim}94V$, respectively. And was showed high conduction current desity($10^4{\sim}10^7A/cm^2$)

• 한국기계가공학회지
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• 제14권5호
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• pp.102-106
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• 2015

In this paper, we study the optimal design for improved rotation latch system performance. The factors affecting the Torque generated in the armature were chosen as design variables. Utilizing the vertical matrix, the orthogonal array table was created to predict the results through minimal analysis. To confirm the Torque generation amount, by utilizing the commercial electromagnetic analysis software MAXWELL, finite element analysis was performed. The approximation method and experimental design through the commercial PIDO tool PIAnO for optimal design and calculations were utilized to perform experiments using an optimization method with evolutionary algorithms. Using the approximation model, design factors were determined that can maximize the torque generated in the armature, and the simulation was performed.

• 한국전기전자재료학회논문지
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• 제17권10호
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• pp.1034-1040
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• 2004

The latch-up current and switching characteristics of MOS-Controlled Thyristor(MCT) are studied with variation of the channel length and impurity concentration. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator is used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of impurity concentration. The channel length and impurity concentration of the proposed MCT power device show the strong affect on the anode current and turn-off time. The increase of impurity concentration in P and N channels is found to give the increase of latch-up current and forward voltage-drop.

• 대한전기학회논문지
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• 제45권2호
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• pp.249-255
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• 1996

A self-aligned latch-up suppressed IGBT has been proposed and the process method and the device characteristics of the IGBT have been verified by numerical simulation. As the source is laterally diffused through the sidewall of the trench in the middle of the body, the size of the source is small and the doping concentration of the source is lower than that of the p++ body and the emitter efficiency of the parasitic npn transistor is low so that latch-up may be suppressed. No additional mask steps for p++ region, source, and source contact are required so that small sized body can be obtained Latch-u current density higher than 10000 A/cm$^{2}$ have been achieved by adjusting the process conditions.

• 한국디자인학회:학술대회논문집
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• 한국디자인학회 2001년도 Bulletin of The 5th Asian Design Conference International Symposium on Design Science
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• pp.34.2-34
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• 2001

• The Korean Journal of Physiology and Pharmacology
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• 제15권3호
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• pp.171-177
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• 2011

Tonic smooth muscle exhibit the latch phenomenon: high force at low myosin regulatory light chains (MRLC) phosphorylation, shortening velocity (Vo), and energy consumption. However, the kinetics of MRLC phosphorylation and cellular activation in phasic smooth muscle are unknown. The present study was to determine whether $Ca^{2+}$-stimulated MRLC phosphorylation could suffice to explain the agonist- or high $K^+$-induced contraction in a fast, phasic smooth muscle. We measured myoplasmic [$Ca^{2+}$], MRLC phosphorylation, half-time after step-shortening (a measure of Vo) and contractile stress in rabbit urinary bladder strips. High $K^+$-induced contractions were phasic at both $22^{\circ}C$ and $37^{\circ}C$: myoplasmic [$Ca^{2+}$], MRLC phosphorylation, 1/half-time, and contractile stress increased transiently and then all decreased to intermediate values. Carbachol (CCh)-induced contractions exhibited latch at $37^{\circ}C$: stress was maintained at high levels despite decreasing myoplasmic [$Ca^{2+}$], MRLC phosphorylation, and 1/half-time. At $22^{\circ}C$ CCh induced sustained elevations in all parameters. 1/half-time depended on both myoplasmic [$Ca^{2+}$] and MRLC phosphorylation. The steady-state dependence of stress on MRLC phosphorylation was very steep at $37^{\circ}C$ in the CCh- or $K^+$-depolarized tissue and reduced temperature flattend the dependence of stress on MRLC phosphorylation compared to $37^{\circ}C$. These data suggest that phasic smooth muscle also exhibits latch behavior and latch is less prominent at lower temperature.

• 전기학회논문지
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• 제67권6호
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• pp.745-752
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• 2018

ICs(Integrated circuits) for nuclear power plant exposed to radiation environment occur malfunctions and data errors by the TID(Total ionizing dose) effects among radiation-damage phenomenons. In order to protect ICs from the TID effects, this paper proposes a radiation-hardening of the logic circuit(D-latch) which used for the data synchronization and the clock division in the ICs design. The radiation-hardening technology in the logic device(NAND) that constitutes the proposed RH(Radiation-hardened) D-latch is structurally more advantageous than the conventional technologies in that it keeps the device characteristics of the commercial process. Because of this, the unit cell based design of the RH logic device is possible, which makes it easier to design RH ICs, including digital logic circuits, and reduce the time and cost required in RH circuit design. In this paper, we design and modeling the structure of RH D-latch based on commercial $0.35{\mu}m$ CMOS process using Silvaco's TCAD 3D tool. As a result of verifying the radiation characteristics by applying the radiation-damage M&S (Modeling&Simulation) technique, we have confirmed the radiation-damage of the standard D-latch and the RH performance of the proposed D-latch by the TID effects.