• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.6
• /
• pp.33-41
• /
• 2004

In this paper, a polarimetric fiber optic current sensor(P-FOCS) is experimented and fabricated, and then a possibility to the commercial utilization of the P-FOCS is also investigated. The P-FOCS measures an applied current by a Faraday rotation linearly proportional to a magnetic field generated by the applied current. The bending-induced linear birefringence in the sensing fiber is minimized by using the low birefringent fiber. Also, all fiber-optic components are used to avoid optical losses coming from the use of bulk components. A signal processing circuit is constructed and used to eliminate the effects of intensity variations in the output signal due to losses coming from misalignments of components such as fiber connectors. Using the optical source of 632.8nm wavelength, Faraday rotation is measured by passing through the sensing fiber within the solenoid of about 1500 turns which is equivalent to a current source of about 7500A. In the range of 1000A to 7500A, the measurement error for linearity is within about 1.5%.

• Proceedings of the KIEE Conference
• /
• 2015.07a
• /
• pp.1261-1262
• /
• 2015

본 논문에서는 PDLS 기반 사냑 간섭계를 사용하여 편광 간섭형 광섬유 진동 센서를 제안하였다. LD와 PD는 빠른 속도로 변하는 세기를 측정하기 위해 사용하였다. PZT를 사용하여 1~3000 Hz까지의 주파수 진동측정이 이루어졌으며 차단 주파수는 ~2100 Hz 였다. 그리고 단위 길이와 단위 스트레인 당 위상 이동은 ${\sim}3.48mrad/({\mu}{\varepsilon}{\cdot}m$)였으며, 최소 검출 가능한 스트레인 섭동은 2000 Hz에서 ${\sim}460p{\varepsilon}/Hz^{1/2}$이었다.

• Korean Journal of Optics and Photonics
• /
• v.16 no.4
• /
• pp.297-303
• /
• 2005

We present the double resonance optical pumping(DROP) spectra according to the laser power, the polarization combination of lasers, and the alignment of lasers in the transition $5P_{3/2}-4D_{5/2}\;and\;5P_{3/2}-4D_{5/2}$ of $^{87}Rb.$ We observed obviously changing DROP spectrum according to the laser power in the transition $5P_{3/2}-4D_{5/2}$ involved the cycling transition. The laser power effects are attributed to the low optical-pumping-effect in the cycling transition. We observed changing DROP spectrum depending on the polarizations of the lasers. The laser polarization effects are attributed to the changing transition probability according to the polarizations of lasers. We compared the co-propagation with the counter-propagation and the spectral linewidths were 12.2 MHz and 6.9 MHz, respectively.

• Korean Journal of Optics and Photonics
• /
• v.14 no.2
• /
• pp.184-188
• /
• 2003

We fabricated a P-I-i-I-N $GaAs/Al_{0.35}Ga_{0.65}As$waveguide phase modulator with significant phase shift for the TE mode but negligible for the TM mode. We selected the P-I-i-I-N structure to cause a phase shift about the TM mode. The wavelength of $\lambda=1.55$\mu\textrm{m}$ was measured for both the TE and TM modes, respectively. As a result, the measured phase shift efficiency ($\Delta\phi$) by using the Fabry-Perot resonance method was $7.9^{\circ}/V.mm$ for TE-polarized light. Also, no modulation was observed for TM-polarized light.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.12 no.1
• /
• pp.75-80
• /
• 1999

In this study, we have investigated the relationship between the generation of pretilt angle and the polarization component in cells with UV light irradiation on polyimide (PI) surface. It was found that the generated pretilt angle is about $1.4^{\circ}$ with S-polarized UV light irradiation of $75^{\circ}$ on PI surface; it may be attributed to the asymmetry triangular of polymer surface with oblique S-polarized UV light irradiation on PI surface. Also, we measured that the generated pretilt angle is about $2.0^{\circ}$ with oblique P polarized UV light irradiation of $75^{\circ}$ on PI surface. Consequently, we suggest that the generated pretilt angle of the NLC is attributed to the interaction between the LC molecules and the polymer surface with oblique polarized UV light irradiation on PI surface.

• Journal of the korean academy of Pediatric Dentistry
• /
• v.38 no.4
• /
• pp.317-326
• /
• 2011

QLF-D system composed with DSLR(digital single-lens reflex) camera, and the images of natural enamel caries and artificial caries was developed from 2 days to 14 days captured by QLF-D system. The correlation between lesion depth of the polarized microscope and luminosity ratio of QLF-D image was analyzed and the results were summarized as follows: 1. The Pearson correlation value between the lesion depth of polarized microscope images and luminosity ratio of QLF-D images was 0.969(p<0.01). 2. From Regression analysis of lesion depth from polarized image by demineralized period, the equation was y = 8.67x - 1.16(p<0.05). 3. From Regression analysis of luminosity ratio from QLF-D image by demineralized period, the equation was y = 3.53x + 6.42(p<0.05). From the results, QLF-D system can detect the enamel caries at the very early stage and can monitor the progression of demineralization and remineralization. For the convenient use of QLF-D system in the laboratory, the image analysing software was needed to analyze of interest site of enamel caries lesion.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.333-333
• /
• 2012

III-V 족 화합물 반도체 물질인 $InAs_xP_{1-x}$는 다양한 광전자 소자와 빠른 속도의 전자 소자로써의 사용 가능성으로 각광받고 있다. 이러한 $InAs_xP_{1-x}$를 소자 제작에 이용하기 위해서는 임의의 As 함량에 따른 InAsP 물질의 정확한 광학적 특성 분석이 필요하다. 따라서 본 연구에서는 1.5~6.0 eV 에너지 구간에서 $InAs_xP_{1-x}$ ($0{\leq}{\times}{\leq}1$) 화합물의 임의의 As 함량에 따른 유전함수를 보고하고자 한다. MBE (molecular beam epitaxy)를 이용하여 InP 기판 위에 성장시킨 $InAs_xP_{1-x}$ (x = 0.000, 0.13, 0.40, 0.60, 0.80, 1.000) 박막을 타원편광분석법을 이용하여 측정하였고, 이 때 화학적 에칭을 통해 산화막 층을 제거하여 순수한 유전함수 ${\varepsilon}$을 얻을 수 있었다. 측정된 유전함수 분석은 parametric 모델을 이용하였으며, parametric 모델은 Gaussian-broadened polynomial들의 합으로서 반도체 물질의 유전함수를 정확히 기술하는 분석법이다. Parametric 모델을 통해 얻어진 각각의 변수들을 As 조성비 x에 대한 다항식으로 피팅하였고, 그 결과 임의의 조성비에 대한 $InAs_xP_{1-x}$ ($0{\leq}{times}{\leq}1$)의 유전함수를 얻어낼 수 있었다. 본 연구 결과는 물질의 실시간 성장 모니터링이나 다층구조 분석, 광소자의 제작 등에 유용한 정보로 이용될 수 있을 것이다.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.7
• /
• pp.56-61
• /
• 1997

I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A $l_{0.48}$As pseudomorphic high electron mobility transistor (P-HEMT) structures were grown on semi-insulating InP substrates by molecular beam epitzxy method. The hall effect measuremetn was used to measure the electrical properties and the photoluminescence (PL) measurement was used to measure the electrical properties and the photoluminescence(PL) measurement for optical propety. By the cross-sectional transmission electron microscopy (XTEM) investigation of the V and X shape defects including slip with angle of 60.deg. C and 120.deg. C to surface in the sampel, the defects formation mecahnism in the I $n_{0.52}$A $l_{0.48}$As epilayers on InP substrates could be explained with the different thermal expansion coefficients between I $n_{0.52}$A $l_{0.48}$As epilayers and InP substrate.d InP substrate.

• Proceedings of the Optical Society of Korea Conference
• /
• 2007.02a
• /
• pp.163-164
• /
• 2007

We have described a polarization selective diffraction grating using liquid crystal polymer and experimentally demonstrated. From the experimental results, intensity ratios of 1.171 for p-polarization and of 0.0072 for s-polarization are achieved by 650nm wavelength, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.9
• /
• pp.1-6
• /
• 2000

Utilizing impurity free vacancy diffusion (IFVD) method, area selective intermixing of InGaAs/InGaAsP multi-quantum well (MQW) structure was done. After this, wavelength division demultiplexing waveguide type photodetectoers was integrated and measured. It showed large blue shift in bandgap due to intermixing of MQW. Photodetectors are based on typical p-i-n structure and devices having large and small bandgap areas line up linearly. Width of waveguide and length of each photodetector are 20 and 250 ${\mu}m$, respectively, TE/TM polarized light from tunable laser was butt-coupled to the photodetector and spectral response was measured. Photodetectors can demultiplexing 1480 and 1550 nm wavelength.