• 한국전자파학회논문지
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• 제26권1호
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• pp.101-112
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• 2015

II~VI족 화합물 반도체 $Zn_xCd_{1-x}S$ 박막을 Indium-tin-oxide(ITO)가 도포된 유리기판 상에 열증발법을 사용하여 증착하였다. 박막의 합성비(molar ratio) x($0{\leq}x{\leq}1$)는 CdS(x=0) 박막과 ZnS(x=1) 박막을 포함하여, 삼원화합물 $Zn_xCd_{1-x}S$ 박막을 제조하기 위하여 변화시켰다. 또한, 증착한 박막의 결정성을 높이기 위하여 진공전기로에서 열처리 하였으며, 분광학적 특성조사를 위해서는 $400^{\circ}C$에서 열처리한 $Zn_xCd_{1-x}S$ 박막이 최적임을 알았다. $Zn_xCd_{1-x}S$ 박막의 합성비(x)와 전자적 구조를 조사하기 위하여 X-선 광전자 분광법(XPS)을 사용하였고, 박막시료의 광학적 에너지 띠 간격 $E_g$는 자외선-가시광-근접 적외선(UV-Vis-NIR) 분광법으로 측정하였으며, 합성비(x)값이 0에서 1까지 변화함에 따라 2.44~3.98 eV 범위의 값을 보여주었다. 끝으로, THz-TDS(Time Domain Spectroscopy) 시스템을 사용하고 $Zn_xCd_{1-x}S$ 박막의 THz파 특성을 측정하여 테라헤르츠(THz) 영역용 전자 및 광학 소자로서 응용가능성을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.39-42
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• 2002

There is a renewed interest in the application of photoconductors especially Cd(Zn)Te to x-ray imaging. In this paper, We investigate effects on x-ray detection characteristic of Zn dopped CdTe detector. Cd(Zn)Te film was fabricated by vacuum thermal evaporation method and then investigate physical analysis using EPMA and XRD. We investigated the leakage current and X-ray photosensitivity as applied voltage about fabricated Cd(Zn)Te film. Experimental results showed that the increase of Zn dopped concentration in $Cd_{1-x}Zn_{x}Te$ detector reduced a leakage current and improved a signal to noise ratio significantly.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 춘계학술대회 논문집
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• pp.35-37
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• 1988

Polycrystalline $Cd_{1-x}Zn_xS$ films were prepared by coaling a slurry which consisted of CdS, ZnS, $CdCl_2$ and propylene glycol on gloss substrates and by sintering in a nitrogen atmosphere. Microstructures, optical transmittance and electrical resistance of the sintered films have been investigatd. Grain shape of $Cd_{1-x}Zn_xS$ films sintered in a sealed boat was nearly spherical but the shape became, irregular when sintered in evaporating condition due to occurrence of CIGM (Chemically Induced Grain-boundary Migration). Controlling the rate of evaporation of $CdCl_2$, sintered $Cd_{1-x}Zn_xS$ films with high optical transmittance and low electrical resistance could be obtained.

• Nano
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• 제13권10호
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• pp.1850118.1-1850118.17
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• 2018

Nanoparticles of the semiconductor catalyst $Cd_xZn_{1-x}S$ were embedded into the metal organic framework MIL-101(Cr) to obtain $Cd_xZn_{1-x}S@MIL-101$(Cr) nanocomposites. These materials not only possess high surface areas and mesopores but also show good utilization of light energy. The ultraviolet-visible diffuse reflectance patterns of $Cd_xZn_{1-x}S@MIL-101$(Cr) nanocomposites showed that $Cd_{0.8}Zn_{0.2}S@MIL-101$(Cr) possessed good visible light response ability among the synthesized nanocomposites. The photocatalytic performance of the $Cd_xZn_{1-x}S@MIL-101$(Cr) nanocomposites were tested via degradation and mineralization of methylene blue in neutral water solution under light irradiation using a 300W xenon lamp. As a result, using $Cd_{0.8}Zn_{0.2}S@MIL-101$(Cr) as a catalyst, 99.2% of methylene blue was mineralized within 30 min. Due to the synergistic effect of adsorption by the MIL-101(Cr) component and photocatalytic degradation provided by the $Cd_{0.8}Zn_{0.2}S$ component, the $Cd_{0.8}Zn_{0.2}S@MIL-101$(Cr) catalyst displayed superior photocatalytic performance relative to $Cd_{0.8}Zn_{0.2}S$ and MIL-101(Cr). Furthermore, $Cd_{0.8}Zn_{0.2}S@MIL-101$(Cr) possessed excellent stability during photodegradation and exhibited good reusability. The remarkable photocatalytic performance of $Cd_{0.8}Zn_{0.2}S@MIL-101$(Cr) is likely due to the effective transfer of electrons and holes at the heterojunction interfaces.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1283-1285
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• 1997

In this paper, structural, optical and electrical properties of $Cd_{1-x}Zn_xS$ thin films prepared by co-evaporation method were studied. The crystal structure of $Cd_{1-x}Zn_xS$ films deposited at a substrate temperature of $150^{\circ}C$ was hexagonal with the c axis aligned perpendicular to the substrate. As increasing composition parameter x, the intensity of (002) peak decreased, which means poor crystalline and decreasing of preferential orientation. The optical bandgap of $Cd_{1-x}Zn_xS$ films varies from 2.41eV for CdS to 3.48eV for ZnS with x. The resistivity of the $Cd_{1-x}Zn_xS$ films increased with x.

• 태양에너지
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• 제8권1호
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• pp.41-48
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• 1988

Heterojunction solar cells of $n-Cd_{1-x}Zn_xS/p-Si$ were fabricated by solution growth technique. The crystal structure, spectral response, surface morphology, and I-V characteristics of the $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cells were studied. The $Cd_{1-x}Zn_xS$ layer deposited on a silicon substrate (111) were found to be a cubic structure with the crystal orientation (111), (220) of the CdS and to be a hexagonal structure with crystal orientation (100) of the ZnS. The open-circuit voltage, short-circuit current, fill factor, and conversion efficiency of $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cell under $100mW/cm^2$ illumination were found to be 0.43V, 38mA. 0.76, and 12.4%, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.56-58
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• 1989

All-polycrystalline Cd$_1$-xZnxS/CdTe solar cells have been fabricated by coating CdTe slurries with 4.5 wt% of CdCl$_2$on the sintered Cd$_1$-xZnxS films and by sintering CdTe layer at 6$25^{\circ}C$ for lh in nitrogen atmosphere. Solar efficiency of the sintered Cd$_1$-xZnxS/CdTe solar cells increases as the Zn content increases up to x=0.06 and then decreases with further increase in the Zn content. A solar efficiency of 12.5% under a solar intensity of 76mW/$\textrm{cm}^2$ was observed in a Cd 0.94 Zn0.06S/CdTe solar cell. By optimizing the amount of CdCl$_2$in the slurry and sintering conditions, it is possible to produce Cd$_1$-xZnxS/CdTe solar cells with efficiency higher than 12%.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.104-110
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• 2001

Structural, optical and electrical properties of Cd$_{1-x}$ Zn$_{x}$S films deposited by chemical bath deposition(CBD), which is a very attractive method for low-cost and large-area solar cells, are presented. Especially, in order to control more effectively the zinc component of the films, zinc acetate, which was used as the zinc source, was added in the reaction solution after preheating the reaction solution and the pH of the reaction solution decreased with increasing the concentration of zinc acetate. The films prepared after preheating and pH control had larger zinc component and higher optical band gap. The crystal structures of Cd$_{1-x}$ Zn$_{x}$S films was a wurtzite type with a preferential orientation of the (002) plane and the lattice constants of the films changed from the value for CdS to those for ZnS with increasing the mole ratio of the zinc acetate. The minimum lattice mismatch between Cd$_{1-x}$ Zn$_{x}$S and CdTe were 2.7% at the mole ratio of (ZnAc$_2$)/(CdAc$_2$+ZnAc$_2$)=0.4. As the more zinc substituted for Cd in the films, the optical transmittance improved, while the absorption edge shifted toward a shorterwavelength. the photoconductivity of the films was higher than the dark conductivity, while the ratio of those increased with increasing the mole ratio of zinc acetate. acetate.

• 한국광학회지
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• 제3권1호
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• pp.55-62
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• 1992

본 연구에서는 CdS, CdSe, ZnS, ZnSe 반도체를 첨가한 SK-16 유리와 ZK-1 유리를 직접 제작하고 열처리하여 유리속에 반도체의 미세결정을 생성시켜 착색유리를 만들고 sharp-cut용 광학 filter로써의 특성을 조사하였다. CdS, CdSe, ZnS 및 ZnSe 반도체를 첨가한 SK-16유리는 열처리돈도를 달리하였을 경우 광흡수단을 변화시킬 수 있는 범위가 30nm정도로 아주 좁았다. 그러나 $CdS_{1-x}Se_x$를 첨가한 SK-16 유리는 x값을 변화시키면서 열처리 함으로써 광흡수단을 ~130nm범위에서 변화시킬 수 있었고 광흡수계수도 높아 sharp-cut용 광학 filter용으로 좋은 특성을 나타내었다. CdSe와 $CdS_{0.5}Se_{0.5}$ 반도체를 첨가한 ZK-1 유리는 열처리온도를 달리 함으로서 흡수단을 변화시킬 수 있는 범위가 ~100nm나 되고 광흡수게수도 아주 높아 sharp-cut용 광학 fiter로 아주 우수한 특성을 나타내었다.

• 한국군사과학기술학회지
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• 제15권4호
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• pp.502-506
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• 2012

In order to find the structural characteristics of the thin films of group II-VI semiconductor compounds compared with those of powder materials, films were made of 4 powders of ZnS, CdS, CdSe, and CdTe(Aldrich), each with 99.99 % purity. For the ZnS/CdS multi-layers, the ZnS layer was coated over the CdS layer on an $AlO_x$ membrane, which served as a protective layer within a vacuum at the average speed of 1 ${\AA}$/sec. After studying the structures of the group II-VI semiconductor thin films by using X-ray spectroscopy, we found that the ZnS, ZnS/CdS, CdS, and CdSe films were hexagonal and exhibited some degree of preferred orientation. Also, the particles of the thin films of II-VI semiconductor compounds proved to be more homogeneous in size compared to those of the powder materials. These results were further verified through scanning electron microscopy(SEM), EDX analysis, and powder and thin film X-ray diffraction.