Growth and Properties of $Cd_{1-x}$$Zn_x$/S Films Prepared by Chemical Bath Deposition for Photovoltaic Devices

Chemical Bath Depsoition법에 의한 $Cd_{1-x}$$Zn_x$/S 박막의 제조 및 특성에 관한 연구

  • 송우창 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 이재형 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 김정호 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 박용관 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 양계준 (충주대학교 전자공학과) ;
  • 유영식 (여주대학 전기과)
  • Published : 2001.02.01

Abstract

Structural, optical and electrical properties of Cd$_{1-x}$ Zn$_{x}$S films deposited by chemical bath deposition(CBD), which is a very attractive method for low-cost and large-area solar cells, are presented. Especially, in order to control more effectively the zinc component of the films, zinc acetate, which was used as the zinc source, was added in the reaction solution after preheating the reaction solution and the pH of the reaction solution decreased with increasing the concentration of zinc acetate. The films prepared after preheating and pH control had larger zinc component and higher optical band gap. The crystal structures of Cd$_{1-x}$ Zn$_{x}$S films was a wurtzite type with a preferential orientation of the (002) plane and the lattice constants of the films changed from the value for CdS to those for ZnS with increasing the mole ratio of the zinc acetate. The minimum lattice mismatch between Cd$_{1-x}$ Zn$_{x}$S and CdTe were 2.7% at the mole ratio of (ZnAc$_2$)/(CdAc$_2$+ZnAc$_2$)=0.4. As the more zinc substituted for Cd in the films, the optical transmittance improved, while the absorption edge shifted toward a shorterwavelength. the photoconductivity of the films was higher than the dark conductivity, while the ratio of those increased with increasing the mole ratio of zinc acetate. acetate.

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References

  1. Sov. Phys. Semicond. v.3 E. I. Andirovich;Y. M. Yuabov;G. R. Yagudaev
  2. Research and Applications v.1 Photo-voltaics T. L. Chu;S. S. Chu
  3. Appl. Phys. Lett. v.25 no.10 A. L. Fahrenbruch;V. Vasilchenko;F. Buch;K. Mitchell;R. H. Bube
  4. IEEE Trans. Electron Devices v.ED-31 no.5 R. A. Mickelsen;W. S. Chen;Y. R. Hsiao;V. E. Lowe
  5. Appl. Phys. Lett. v.29 no.9 L. C. Burton;T. L. Hench
  6. Trans. KIEE v.47 no.7 J. H. Lee;H. Y. Lee;Y. K. Park;S. H. Shin;J. H. Shin;G. J. Park
  7. J. Appl. Phys. v.23 no.1 K. Yamaguchi;S. Sato
  8. J. Appl. Phys. v.63 no.3 G. K. Padam;G. L. Malhotra;S. U. M. Rao
  9. Thin Solid Films v.268 J. M. Dona;J. Herrero
  10. Solar Energy Materials and Solar Cells v.26 G. C. Morris;R. Vanderveen
  11. J. Appl. Phys. v.18 no.2 O. P. Agnihotri;B. K. Gupta
  12. Trans. KIEE v.48C no.8 J. H. Lee;H. Y. Lee;Y. K. Park
  13. 한국전기전자재료학회 v.12 no.3 이재형;이호열;박용관;신성호;신재혁;박광자
  14. Elements of X-ray diffraction B. D. Cullity
  15. Phys. Status Solidi v.A11 no.K135 D. Bonet
  16. J. Appl. Phys. v.48 R. S. Feigelson;N'Diaye;S. Y. Yin;R. Bube