• Journal of Nutrition and Health
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• 제51권1호
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• pp.23-30
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• 2018

Purpose: Runx2 (runt-related transcription factor 2), a bone-specific transcription factor, is a key regulator of osteoblast differentiation and its expression is induced by the activation of BMP-2 signaling. This study examined whether zinc modulates BMP-2 signaling and therefore stimulates Runx2 and osteoblast differentiation gene expression. Methods: Two osteoblastic MC3T3-E1 cell lines (subclones 4 as a high osteoblast differentiation and subclone 24 as a low osteoblastic differentiation) were cultured in an osteogenic medium (OSM) as the normal control, Zn-($1{\mu}M$ Zn) or Zn+($15{\mu}M$ Zn) for 24 h. The genes and proteins for BMP-2 signaling (BMP-2, Smad-1/p-Smad-1), transcription factors (Runx2, osterix), and osteoblast differentiation marker proteins were assessed. Results: In both cell lines, BMP-2 mRAN and protein expression and extracellular BMP-2 secretion all decreased in Zn-. The expression of Smad-1 (downstream regulator of BMP-2 signaling) and p-Smad-1 (phosphorylated Smad-1) also downregulated in Zn-. Furthermore, the expression of the bone-specific transcription factors, Runx2 and osterix, decreased in Zn-, which might be due to the decreased BMP-2 expression and Smad-1 activation (p-Smad-1) by Zn-, because Runx2 and osterix both are downstream in BMP-2 signaling. Bone marker gene expression, such as alkaline phosphatase (ALP), collagen type I (COLI), osteocalcin, and osteopontin were also downregulated in Zn-. Conclusion: The results suggest that a zinc deficiency in osteoblasts suppresses the BMP-2 signaling pathway via the suppression of Smad-1 activation, and this suppressed BMP-2 signaling can cause poor osteoblast differentiation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.319-320
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• 2009

In this study, high-quality Al-N doped p-type ZnO thin films were deposited on n-type Si (100) wafer or Si coated with buffer layer by DC magnetron sputtering in the mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin film showed higher carrier concentration $2.93\times10^{17}cm^{-3}$, lower resistivity of $5.349\;{\Omega}cm$ and mobility of $3.99\;cm^2V^{-1}S^{-1}$, respectively. According to PL spectrum, the Al donor energy level depth ($E_d$) of Al-N codoped p-type ZnO film was reduced to about 51 meV, and the N acceptor energy level depth ($E_a$) was reduced to 63 meV, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.419-420
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• 2008

In this study, high quality (Al,N)-codoped p-type ZnO thin films were obtained by DC magnetron sputtering. The film on buffer layer grown in 80% $N_2$ ambient shows highest hole concentration of $2.93\times10^{17}cm^{-3}$. The films show hole concentration in the range of $1.5\times10^{15}$ to $2.93\times10^{17}cm^{-3}$, resistivity of 131.2 to 2.864 $\Omega$cm, mobility of 3.99 to 31.6 $cm^2V^{-1}s^{-1}$. The films on Si show easier p-doping in ZnO than those on buffer layer. The film on Si shows the highest quality of optical photoluminescence (PL) characteristics. The donor energy level $(E_d)$ of (Al,N)-codoped ZnO films is about 50 meV and acceptor energy level $(E_a)$ is in the range of 63 to 71 meV. It will help to improve p-type ZnO films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.209-209
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• 2009

Fabrication of p-type ZnO has already proven difficult and usually inconsistent despite numerous worldwide efforts. Many research groups studied electrical and optical properties P, Li, As, N single doped ZnO thin film. In P-doped ZnO thin film, the reproducibility of p-type conduction with $P_2O_5$ as a dopant source was shown to be relatively poor. In this study, we made P single doped and Li & P co-doped ZnO target. To investigate electrical and optical properties of P single doped and Li & P co-doped ZnO thin film using $P_2O_5$ and $Li_3PO_4$ dopant source respectively was deposited by PLD. The growth temperature was changed 500, $700^{\circ}C$ and various oxygen partial pressure and post-annealing conditions was changed temperature, different gas ambient($O_2,N_2$). We investigate that how to change electrical and optical properties as function of growth temperature, oxygen partial pressure and post-annealing(RTA).

• 한국진공학회지
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• 제20권1호
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• pp.50-56
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• 2011

본 논문에서는 버퍼막 두께 및 열처리 온도에 따른 ZnO/b-ZnO/p-Si(111) 기반 이종접합 다이오드 전류 특성에 대한 연구가 진행되었고, b-ZnO (ZnO buffer layer) 버퍼막 두께 및 열처리 온도에 따른 p-Si(111) 기판 위에 증착시킨 ZnO 박막의 구조적, 전기적 특성 또한 연구되었다. X-ray diffraction (XRD) 방법을 이용하여 ZnO 박막의 구조적 특성을 측정하였고, semiconductor parameter analyzer를 이용하여 ZnO/b-ZnO/p-Si(111) 이종접합 다이오드의 I-V 특성을 평가하였다. XRD 분석 결과 버퍼막 열처리 온도 $700^{\circ}C$, 버퍼막 두께 70 nm에서 ZnO 박막은 우세한 (002) 방향의 c-축 배향성을 갖는 육방정계(hexagonal wurtize) 결정 구조를 나타내었다. 전기적 특성인 운반자 농도, 비저항 값의 경우에는 버퍼막 열처리 온도 $700^{\circ}C$, 버퍼막 두께 50 nm에서 우수한 전기적 특성(비저항: $2.58{\times}10^{-4}[{\Omega}-cm]$, 운반자 농도: $1.16{\times}10^{20}[cm^{-3}]$)을 보였다. 또한 ZnO/b-ZnO/p-Si(111) 이종접합 다이오드의 전류 특성은 버퍼막 열처리 온도 $700^{\circ}C$에서 버퍼막 두께가 증가할수록 전류 특성이 향상되는 경향을 보였다.

• 한국세라믹학회지
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• 제40권6호
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• pp.583-588
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• 2003

폐기물 함유 세라믹 재료의 성형과정에서 일어나는 일차적인 중금속 안정화 과정을 알아보기 위하여 중금속(Cd, Cr, Zn) 표준용액의 농도(10-30 ppm)와 pH(pH 3-9)를 조절하여 적점토, 백토와 제올라이트에 대해 회분식 흡착실험을 행하였다. pH증가에 따라 모든 흡착원료에서 Cd와 Zn의 흡착률은 증가하였고 pH 5 이상에서는 완만한 증가를 보였다. Cr의 경우 pH증가에 따른 흡착률의 증가는 관찰할 수 없었고 오히려 적섬토와 백토를 혼합한 원료의 경우에는 pH 3에서의 흡착률에 비해 pH 5 이상에서는 50%의 흡착률 감소를 보였다 세 가지 중금속 Cd, Cr, Zn을 함께 혼합한 중금속 용액을 적점토에 대해 실험한 결과 흡착률은 Cd, Zn>Cr 순이었으나, Cu, Fe, Pb의 중금속이 추가적으로 첨가될 경우 Fe>Pb, Cu>Cr>Zn>Cd 순으로 흡착률이 변화하였다. 이는 공존 양이온의 종류가 흡착률을 좌우하며 주어진 조건에서 서로 경쟁적인 관계를 가지고 흡착하기 때문인 것으로 사료된다 한편, 공존음이온으로 Cl$^{-}$와 SO$_4$$^{2-}$ 를 1-20 ppm까지 첨가한 경우 공존 양이온의 경우와는 달리 중금속 흡착률에는 큰 영향을 주지 못하였다.

• 자원리싸이클링
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• 제11권1호
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• pp.19-25
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• 2002

$ZnSO_4$- $Na_2$$SO_4$-$H_2$$SO_4$-$NaOH-H_2$O계에 대해 전해질의 농도를 변화시키며 $25^{\circ}C$에서 용액의 pH를 측정하고, K-value방법을 이용하여 이온평형을 해석하였다. 물의 활동도와 용질의 활동도계수는 Pitzer식으로 계산하였다. 평형상태에서 존재하는 용질들의 농도와 활동도계를 전해질의 초기농도로부터 이온평형을 해석하여 구할 수 있었다 이온강도가 4 m정도로 진한 용액에서 pH측정값과 이온평형 해석으로 구한 pH 이론 값은 서로 잘 일치하였다. 액의 이온강도가 3.5에서 4.3사이의 실험조건에서 Pitzer식으로 구한 $ZnSO_4$의 평균이온 활동도계수는 문헌에 발표된 값과 잘 일치하였다.

• 전기전자학회논문지
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• 제17권2호
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• pp.182-188
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• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.372-375
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• 2017

ZnO thin films were deposited by RF magnetron sputtering and then diffused by using an As source in the ampouletube. Also, the ZnO p-n homojunction was made by using As-doped ZnO thin films, and its properties were analyzed. After the As doping, the surface roughness increased, the crystal quality deteriorated, and the full width at half maximum was increased. The As-doped ZnO thin films showed typical p-type properties, and their resistivity was as low as $2.19{\times}10^{-3}{\Omega}cm$, probably because of the in-diffusion from an external As source and out-diffusion from the GaAs substrate. Also, the ZnO p-n junction displayed the typical rectification properties of a p-n junction. Therefore, the As diffusion method is effective for obtaining ZnO films with p-type properties.

• 한국전기전자재료학회논문지
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• 제28권3호
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• pp.165-169
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• 2015

In this paper, in order to develop the composition ceramics with the excellent dielectric properties, $Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_{0.09}(Zr_{0.5}Ti_{0.5})_{0.88}O_3$ ceramics were fabricated by the conventional solid-state method. The effects of ZnO addition on their microstructure and piezoelectric properties were systematically investigated. The rhombohedral-tetragonal phase coexistence has been found in the ceramics without ZnO content and then with further increasing ZnO content, specimens exhibited tetragonal phase. The optimized ZnO content formed liquid phase and aided the grain growth of specimens. When 0.4 wt% ZnO was added, the optimal physical properties ($d_{33}=422pC/N$, $d_{31}=161pC/N$, ${\varepsilon}_r=1,905$, $k_p=0.55$, $Q_m=160$) were obtained.