Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Synthesis of p-Type ZnO Thin Film Prepared by As Diffusion Method and Fabrication of ZnO p-n Homojunction

  • Kim, Deok Kyu (Advanced LED Technology Development Project, Samsung Electronics Co. Ltd.)
  • Received : 2017.03.06
  • Accepted : 2017.04.09
  • Published : 2017.06.01
Download PDF
⟨ Previous Next ⟩

Abstract

ZnO thin films were deposited by RF magnetron sputtering and then diffused by using an As source in the ampouletube. Also, the ZnO p-n homojunction was made by using As-doped ZnO thin films, and its properties were analyzed. After the As doping, the surface roughness increased, the crystal quality deteriorated, and the full width at half maximum was increased. The As-doped ZnO thin films showed typical p-type properties, and their resistivity was as low as $2.19{\times}10^{-3}{\Omega}cm$, probably because of the in-diffusion from an external As source and out-diffusion from the GaAs substrate. Also, the ZnO p-n junction displayed the typical rectification properties of a p-n junction. Therefore, the As diffusion method is effective for obtaining ZnO films with p-type properties.

Keywords

References

  1. D. C. Look and B. Claflin, Phys. Status Solidi B, 241, 624 (2004). [DOI: http://doi.org/10.1002/pssb.200304271]
  2. Y. R. Ryu, W. J. Kim, and H. W. White, J. Cryst. Growth, 219, 419 (2000). [DOI: http://doi.org/10.1016/S0022-0248(00)00731-4]
  3. A. V. Singh, R. M. Mechra, A. Wakahara, and A. Yoshida, J. Appl. Phys., 93, 396 (2003). [DOI: http://dx.doi.org/10.1063/1.1527210]
  4. K. K. Kim, H. S. Kim, D. K. Hwang, J. H. Lim, and S. J. Park, Appl. Phys. Lett., 83, 63 (2003). [DOI: http://dx.doi.org/10.1063/1.1591064]
  5. J. H. Lim, C. K. Kang, K. K. Kim, I. K. Park, D. K. Hwang, and S. J. Park, Adv. Mater., 18, 2720 (2006). [DOI: http://dx.doi.org/10.1002/adma.200502633]
  6. Z. Z. Ye, F. Z. Ge, J. G. Lu, Z. H. Zhang, L. P. Zhu, B. H. Zhao, and J. Y. Huang, J. Cryst. Growth, 265, 127 (2004). [DOI: http://doi.org/10.1016/j.jcrysgro.2003.12.059]
  7. J. Lu, Y. Zhang, Z. Ye, L. I Wang, B. Zhao, and J. Huang, Mater. Lett., 57, 3311 (2003). [DOI: http://doi.org/10.1016/S0167-577X(03)00054-5]
  8. J. H. Liang, Y. J. Chen, and Y. C. Wang, Surf. Coat. Tech., 231, 243 (2013). [DOI: http://doi.org/10.1016/j.surfcoat.2012.04.079]
  9. S. K. Hazra and S. Basu, Solid State Elect., 49, 1158 (2005). [DOI: http://doi.org/10.1016/j.sse.2005.04.015]
  10. C. Zhang, X. Li, J. Bian, W. Yu, and X. Gao, Sur. & Coat. Tech., 198, 253 (2005). [DOI: http://doi.org/10.1016/j.surfcoat.2004.10.088]