• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.575-578
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• 2000

In this work, all solid-state thin film supercapacitor(TFSC) was fabricated using tungsten trioxide (WO$_3$) with a structure WO$_3$/LiPON/WO$_3$/Pt/TiO$_2$/Si (substrate). After TiO$_2$ was deposited on Si(100) wafer by d.c. reactive sputtering, the Pt current collector films were grown on TiO$_2$glue layer without breaking vacuum by d.c. sputtering. Fabrication conditions of WO$_3$ thin film were such that substrate temperature, working pressure, gas ratio of $O_2$/Ar and r.f. power were room temperature, 5 mTorr, 20% (O$_2$(8sccm)/Ar(32sccm)) and 200W, respectively. LiPON electrolyte film were grown on the WO$_3$ film using r.f. magnetron sputtering at room temperature. The XRD pattern of the as-deposited WO$_3$ thin film were shown no crystalline peak (amorphous). The SEM image of as-deposited WO$_3$ thin film showed that the surface is smooth and uniform. The capacitiy of as-fabricated TFSC was 0$\times$10$^{-2}$ F/$\textrm{cm}^2$-${\mu}{\textrm}{m}$.

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1369-1376
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• 1995

The WO3 thin-film NOx sensor which is of practical use and includes the heater and the temperature sensor was fabricated. The WO3 thin films as a gas-sensing layer was deposited at ambient temperature in a high-vacuum resistance heated evaporator. The highest sensitivity of the WO3 thin-film sensor to NOx was obtained under the condition of the annealing temperature of 50$0^{\circ}C$ and the operating temperature of 30$0^{\circ}C$. The gas sensing characteristics of this sensor was excellent, i.e. high sensitivity (Rgas/Rair in 3 ppm NO2=53) and fast response time (4 seconds).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.536-539
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• 2000

The effects of annealing on the electrical and structural characteristics for the rf sputter deposited WO$_3$thin film. The sputtered thin films are annealed at 773K for 1 hour in air atmosphere. Oxygen flow rate were changed from 0 to 70% during sputtering. It is observed from the results of the AFM measurement that the average roughness for the rf sputter deposited WO$_3$thin film would be increased from 2.45 angstrom to 152 angstrom by annealing. The sheet resistance of the sputtered WO$_3$film is changed from insulting to MOhm after annealing. According to the results of the XRD, the as-deposited films revealed the amorphous state whereas the peaks of X-ray diffraction at 2 theta= 28 degrees and 2 theta = 25 degrees corresponding to the (111) and (200) plane of the WO$_3$film respectively are observed after annealing.

• Journal of the Korean Electrochemical Society
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• v.8 no.1
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• pp.32-36
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• 2005

[ $WO_3$ ] and $NiO-WO_3$ thin films were deposited on a Si (100) substrate by using high vacuum thermal evaporation. The effects of various film thicknesses on the surface morphology $WO_3$ and $NiO-WO_3$ thin films were investigated. X-ray diffraction (XRD), Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the deposited films. The results suggest that as $WO_3$ thin films became thick, their grain grew up to a $0.6{\mu}m$. On the other hand, NiO-doping to $WO_3$ thin films inhibited the grain growth five times less than undoped $WO_3$ thin films. This results show that NiO doping inhibited the grain growing of $WO_3$ thin films. Also, the variation of NOx sensitivity $(R_{NOx}/R_{air})$ to the thickness of $WO_3$ and $NiO-WO_3$ thin films were measured according to the thickness change of thin films and the working temperature of sensor in 5ppm NOx gas. As a result, $NiO-WO_3$ thin films showed more excellent properties than $WO_3$ thin films for NOx sensitivity.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.11
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• pp.1533-1537
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• 2014

$WO_3/Ag/WO_3$ multilayer was researched by using RF magnetron sputtering with transparent electrode. Process gas flow ratio with $Ar/O_2$ were selected the optimum conditions at 70sccm/2sccm and $WO_3$ thin film at its conditions was appeared at transmittance about 80% in the visible light region to the average. $WO_3/Ag/WO_3$ multilayer thin films were fabricated from the same process condition which was the same gas flow ratio of Ar and $O_2$ $WO_3/Ag/WO_3$ thin films were appeared transmittance about 93% and sheet resistance about $6.41{\Omega}/{\square}$. From the SEM images, each thin films were appeared when $WO_3$ is 40nm and $O_2$ is 10nm.

• Journal of Sensor Science and Technology
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• v.15 no.2
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• pp.120-126
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• 2006

Physicochemical and electrical properties for hydrogen gas sensors based on Pd-deposited $WO_3$ thin films were investigated as a function of Pd thickness, annealing temperature, and operating temperature. $WO_3$ thin films were deposited on an insulating material by thermal evaporator. XRD, FE-SEM, AFM, and XPS were used to evaluate the crystal structure, microstructure, surface roughness, and chemical property, respectively. The deposited films were grown $WO_3$ polycrystalline with rhombohedral structure after annealing at $500^{\circ}C$. The addition effect of Pd is not the crystallinity but the suppression of grain growth of $WO_3$. Pd was scattered an isolated small spherical grain on $WO_3$ thin film after annealing at $500^{\circ}C$ and it was agglomerated as an irregular large grain or diffused into $WO_3$ after annealing at $600^{\circ}C$. 2 nm Pd-deposited $WO_3$ thin films operated at $250^{\circ}C$ showed good response and recovery property.

• Journal of Sensor Science and Technology
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• v.5 no.5
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• pp.39-46
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• 1996

The Pd or Pt-doped $WO_{3}$ thin-film NOx sensor was fabricated. The $WO_{3}$-based thin films as a gas-sensing layer were deposited at ambient temperature in a high-vacuum resistance heated evaporator and annealed at $500^{\circ}C$. The gas sensitivity ($R_{gas}/R_{air}$) to 5 ppm $NO_{2}$ measured at the operating temperature of $300^{\circ}C$ was 50 (highest sensitivity) for the 0.5 wt.% $Pt-WO_{3}$ sensor.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.136-140
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• 1999

The stability and response time of $WO_3$ thin films for EC device are critical problems being solved. Those are affected by the species of electrolyte, preparation conditions and fabricating methods of specimen. In this paper, we compared the stabilities of three kinds of tungsten oxide film in electrolyte. Each of three films was prepared by different manufacturing conditions, that is, one is a thermal oxidation film of tungsten metal deposited on pure glass substrate, another is a $WO_3$ film made on ITO glass directly, the other is a thermally oxidized film on tungsten plate. It was observed that thermally oxidized $WO_3$ films has a remarkable stability (the lifetime was above $10^6$ cycle). From these results, we found that the stability was closely related to the stoichiometric bonding between tungsten and oxygen atoms in addition to crystallinity and density of film.

• Journal of Surface Science and Engineering
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• v.55 no.2
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• pp.96-101
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• 2022

The effects of the growth temperature on the structural, optical, and morphological properties of BaWO₄:Sm³⁺ phosphor thin films were investigated. The BaWO₄:Sm³⁺ thin films were grown on quartz substrates at several growth temperatures by radio-frequency magnetron sputtering. All the thin films crystallized in a tetragonal structure with a main BaWO₄ (112) diffraction peak. The 830 nm-thick BaWO₄:Sm³⁺ thin films grown at 300 ℃ exhibited numerous polygon-shaped particles. The excitation spectra of BaWO₄:Sm³⁺ thin films consisted of a broad excitation band in the 200-270 nm with a maximum at 236 nm due to the O^2--Sm³⁺ charge transfer and two small bands peaked at 402 and 463 nm, respectively. Under 236 nm excitation, the BaWO₄:Sm³⁺ thin films showed an intense red emission peak at 641 nm due to the ⁴G_5/2→⁶H_9/2 transition of Sm³⁺, indicating that the Sm³⁺ ions occupied sites of non-inversion symmetry in the BaWO₄ host lattice. The highest emission intensity was observed for the thin film grown at 300 ℃, with a 51.8% transmittance and 5.09 eV bandgap. The average optical transmittance in the wavelength range of 500-1100 nm was increased from 53.2% at 200 ℃ to 60.8% after growing at 400 ℃. These results suggest that 300 ℃ is the optimum temperature for growing redemitting BaWO₄:Sm³⁺ thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.602-610
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• 2012

The powders for the $Na_xWO_3$ (x= 1 and 0.75) sputtering targets were synthesized by the calcination in reductive atmosphere. Near single-phase $NaWO_3$ and single-phase $Na_{0.75}WO_3$ powder targets were prepared. By using the targets, thin films of each composition were deposited by rf magnetron sputtering on the $SiO_2$ (100 nm)/Si substrates and annealed by RTP (rapid thermal processing) for crystallization. In the case of the $NaWO_3$ composition, single-phase $Na_xWO_3$ thin films, where x was believed to be slightly less than 1, were fabricated accompanying the Na-diffusion into the substrates during RTP. However, in the case of the $Na_{0.75}WO_3$ thin film preparation, it was unable to make single-phase thin films. From the phase formation behaviors of both powders and thin films, it was revealed that $Na_xWO_3$ with nonstoichiometric composition of x, which was slightly less than 1, was favorable. The good electrical conduction properties were obtained from the single-phase $Na_xWO_3$ thin films. Their electrical resistivities were as low as $7.5{\times}10^{-4}{\Omega}{\cdot}cm$.