Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Characteristics of Pd-doped WO3 thin film for hydrogen gas sensor

수소 센서용 Pd 첨가한 WO3 박막의 특성

  • 김광호 (조선대학교 신소재공학과) ;
  • 최광표 (전남신소재기술산업화지원센터) ;
  • 권용 (조선대학교 신소재공학과) ;
  • 박진성 (조선대학교 신소재공학과)
  • Published : 2006.03.31
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Abstract

Physicochemical and electrical properties for hydrogen gas sensors based on Pd-deposited $WO_3$ thin films were investigated as a function of Pd thickness, annealing temperature, and operating temperature. $WO_3$ thin films were deposited on an insulating material by thermal evaporator. XRD, FE-SEM, AFM, and XPS were used to evaluate the crystal structure, microstructure, surface roughness, and chemical property, respectively. The deposited films were grown $WO_3$ polycrystalline with rhombohedral structure after annealing at $500^{\circ}C$. The addition effect of Pd is not the crystallinity but the suppression of grain growth of $WO_3$. Pd was scattered an isolated small spherical grain on $WO_3$ thin film after annealing at $500^{\circ}C$ and it was agglomerated as an irregular large grain or diffused into $WO_3$ after annealing at $600^{\circ}C$. 2 nm Pd-deposited $WO_3$ thin films operated at $250^{\circ}C$ showed good response and recovery property.

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References

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