• 센서학회지
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• 제21권4호
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• pp.283-286
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• 2012

This paper presents the optical hydrogen sensor based on transparent 3C-SiC membrane and photovoltaic effect. Gasochromic materials of Pd and Pd/$WO_3$ were deposited by sputter on 3C-SiC membrane for gas sensing area. Gasochromic materials change to transparency by exposure to hydrogen. The variations of light intensity by hydrogen generate the photovoltaic of P-N junction between N-type 3C-SiC and P-type Si. Single layer of Pd shows higher photovoltaic compared with Pd/$WO_3$. However, phase transition from ${\alpha}$ to ${\beta}$ is shown at 6 %. Pd/$WO_3$ structure show the more linear response to hydrogen range of 2 % ~10 %. Also, almost 2 times fast response and recovery characteristics are shown at Pd/$WO_3$. These fast performances are come from the fact that Pd promoted the chemical reaction between hydrogen and $WO_3$.

• 센서학회지
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• 제15권2호
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• pp.120-126
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• 2006

Physicochemical and electrical properties for hydrogen gas sensors based on Pd-deposited $WO_3$ thin films were investigated as a function of Pd thickness, annealing temperature, and operating temperature. $WO_3$ thin films were deposited on an insulating material by thermal evaporator. XRD, FE-SEM, AFM, and XPS were used to evaluate the crystal structure, microstructure, surface roughness, and chemical property, respectively. The deposited films were grown $WO_3$ polycrystalline with rhombohedral structure after annealing at $500^{\circ}C$. The addition effect of Pd is not the crystallinity but the suppression of grain growth of $WO_3$. Pd was scattered an isolated small spherical grain on $WO_3$ thin film after annealing at $500^{\circ}C$ and it was agglomerated as an irregular large grain or diffused into $WO_3$ after annealing at $600^{\circ}C$. 2 nm Pd-deposited $WO_3$ thin films operated at $250^{\circ}C$ showed good response and recovery property.

• 한국수소및신에너지학회논문집
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• 제16권1호
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• pp.9-16
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• 2005

We studied the electrochromic properties of hydrated amorphous ruthenium oxide ($RuO_2{\cdot}xH_2O$) thin films using in-situ Raman spectroscopy during electrochemical charging/discharging cycles. We have found that the principal effect of hydrogen insertion into $RuO_2{\cdot}xH_2O$ is reduction of $Ru^{4+}\;to\;Ru^{3+}$, and not formation of new bonds involving hydrogen. We compared the changes in the Raman spectrum of a gasochromic $Pd/RuO_2{\cdot}xH_2O$ film as it is exposed to hydrogen gas with that of electrochemical hydrogen insertion. We tested the changes in the optical transmission of the $Pd/RuO_2{\cdot}xH_2O$ film when exposed to hydrogen gas.