Characterization of Current Drivability and Reliability of 0.3 um Inverse T-Gate MOS Compared with Those of Conventional LDD MOS (0.3 um급 Inverse-T Gate 모스와 LDD 모스의 전류구동력 및 신뢰성 특성비교)
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- Journal of the Korean Institute of Telematics and Electronics A
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- v.30A no.8
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- pp.72-80
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- 1993