• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.351-354
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• 2013

Thin-film transistors(TFTs) with silicon-zinc-tin-oxide(SiZnSnO, SZTO) channel layer are fabricated by rf sputtering method. Electrical properties were changed by different annealing treatment of dry annealing and wet annealing. This procedure improves electrical property especially, stability of oxide TFT. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the surfaces by annealing treatment. The threshold voltage ($V_{th}$) shifted toward positive as increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than that that of Sn, Zn, resulting in the degeneration of the oxygen vacancy ($V_O$). As a result, the Si acts as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller, resulting in the enhancement of stability of TFTs.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.51-54
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• 2017

TFTs (thin film transistors) were fabricated using a-SIZO (amorphous silicon-indium-zinc-oxide) channel by RF (radio frequency) magnetron sputtering at room temperature. We report the influence of various channel thickness on the electrical performances of a-SIZO TFTs and their stability, using TS (temperature stress) and NBTS (negative bias temperature stress). Channel thickness was controlled by changing the deposition time. As the channel thickness increased, the threshold voltage ($V_{TH}$) of a-SIZO changed to the negative direction, from 1.3 to -2.4 V. This is mainly due to the increase of carrier concentration. During TS and NBTS, the threshold voltage shift (${\Delta}V_{TH}$) increased steadily, with increasing channel thickness. These results can be explained by the total trap density ($N_T$) increase due to the increase of bulk trap density ($N_{Bulk}$) in a-SIZO channel layer.

• Journal of the Korean Society for Heat Treatment
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• v.10 no.4
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• pp.266-277
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• 1997

Near-threshold fatigue crack growth characteristics was investigated on the Ni-Cr-Mo-V low alloy steel, which has the different microstructure obtained by tempering at various temperature. The specimens were austenized at $950^{\circ}C$ and then followed by tempering at $200^{\circ}C$, $530^{\circ}C$ and $600^{\circ}C$. Strain rate was obtained from strain gauge attached on the crack tip and crack opening point was observed through load-strain curve. Threshold stress intensity range(${\Delta}K_{th}$) was increased with increasing tempering tempuerature, but the effective threshold stress intensity rage (${\Delta}K_{eff,\;th}$) was not affected with the increasing temperature. Grain size increased with increasing tempering temperature.

• Nuclear Engineering and Technology
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• v.49 no.1
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• pp.216-223
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• 2017

In this work, linear and mass attenuation coefficients, effective atomic number and electron density, mean free paths, and half value layer and $10^{th}$ value layer values of barium-bismuth-borosilicate glasses were obtained for 662 keV, 1,173 keV, and 1,332 keV gamma ray energies using MCNP-4C code and XCOM program. Then obtained data were compared with available experimental data. The MCNP-4C code and XCOM program results were in good agreement with the experimental data. Barium-bismuth-borosilicate glasses have good gamma ray shielding properties from the shielding point of view.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.209.2-209.2
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• 2013

We proposed and fabricated zinc oxide thin-film transistors (TFTs) employing 4-mercaptophenol (4MP) doped ZnO by atomic layer deposition (ALD) that results in highly stable and high performance. The 4MP concentration in ZnO films were varied from 1.7% to 5.6% by controlling Zn:4MP pulses. The n-type carrier concentrations in ZnO thin films were controlled from $1.017{\times}10^{20}/cm^3$ to $2.903{\times}10^{17}/cm^3$ with appropriate amount of 4MP doping. The 4.8% 4MP doped ZnO TFT revealed good device mobility performance of 8.4 $cm^2/Vs$ and the on/off current ratio of 106. Such 4MP doped ZnO TFTs exhibited relatively good stability (${\Delta}V_{th}$: 2.4 V) under positive bias-temperature stress while the TFTs with only ZnO showed a 4.3 ${\Delta}V_{th}$ shift, respectively.

• Journal of the Korean Mathematical Society
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• v.58 no.3
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• pp.703-722
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• 2021

Let G = (V, E) be a connected locally finite and weighted graph, ∆_p be the p-th graph Laplacian. Consider the p-th nonlinear equation -∆_pu + h|u|^p-2u = f(x, u) on G, where p > 2, h, f satisfy certain assumptions. Grigor'yan-Lin-Yang [24] proved the existence of the solution to the above nonlinear equation in a bounded domain Ω ⊂ V. In this paper, we show that there exists a strictly positive solution on the infinite set V to the above nonlinear equation by modifying some conditions in [24]. To the m-order differential operator 𝓛_m,p, we also prove the existence of the nontrivial solution to the analogous nonlinear equation.

• Economic and Environmental Geology
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• v.30 no.1
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• pp.35-49
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• 1997

The coal formation of the Deokpyeong area are interbedded along metapelites of the Ogcheon Supergroup, which are composed mainly of graphite, quartz, muscovite and associated with small amounts of biotite, chlorite, pyrite and barite. The ratios of $SiO_2/Al_2O_3$, $Al_2O_3/Na_2O$ and $K_2O/Na_2O$ of the coaly metapelite are variable and wide range from 1.80 to 10.21, from 27.8 to 388.8 and from 7.6 to 61.8, respectively. These coal formation were deposited in basin of marine environments, and the REE of these rocks are not influenced with metamorphism and hydrothermal alterations on the basis of $Al_2O_3$ versus La, La against Ce, the ratios of La/Ce (0.19 to 0.99) and Th/U (0.02 to 4.75). These rocks also show much variation in $La_N/Yb_N$ (1.19 to 22.89), Th/Yb (0.14 to 21.43) and La/Th (0.44 to 13.67), and their origin is explained by derivation from a mixture of sedimentary and igneous rocks. The wide range in trace and REE element characteristics as Co/Th (0.12 to 2.78), La/Sc (0.33 to 10.18), Sc/Th (0.57 to 5.73), V/Ni (8 to 2347), Cr/V (0.02 to 0.67) and Ni/Co (1.56 to 32.95) of these coaly metapelites argues for inefficient mixing of the various source lithologies during sedimentation. Deep to pale green barium-vanadium muscovites (vanadium-oellacherite) have been found in this coal formations. Modes of occurrence and grain size of muscovite are heterogeneous, but most of the barium and vanadium-bearing muscovites occur along the boundaries between graphite and quartz grains, ranging from 200 to $350{\mu}m$ in length and from 40 to $60{\mu}m$ in width. Results of X-ray diffraction data of the minerals characterized to be monoclinic system with $a=5.249{\AA}$, $b=8.939{\AA}$, $c=20.924{\AA}$ and ${\beta}=95.894^{\circ}$. Representative chemical formula of the muscovite was $(Na_{0.09}K_{1.44}Ba_{0.46})(Al_{2.75}Ti_{0.07}V_{0.56}Fe_{0.08}Mg_{0.50})(Si_{6.12}Al_{1.88})O_{22}$. The V possibly substitute octahedral Al, and the Ba is coupled substitution of $K^+Si^{4+}=Ba^{2+}Na^+Ca^{2+}$, which compositional ranges of V and Ba are from 0.42 to 0.69 and from 0.34 to 0.56 based on $O_{22}$, respectively. Formation mechanism of the barium-vanadium muscovites in the coaly metapelite is shown that the formed by high pressure and temperature from regional metamorphism origanated during diagenesis at the interface between a basinal brine and organic matter.

• BMB Reports
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• v.32 no.1
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• pp.39-44
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• 1999

Pyruvate decarboxylase (PDC) catalyzes the conversion of pyruvate to acetaldehyde as the penultimate step in alcohol fermentation. The enzyme requires two cofactors, thiamin diphosphate (ThDP) and $Mg^{2+}$, for activity. Zymomonas mobilis PDC shows a strong preference for pyruvate although it will use the higher homologues 2-ketobutyrate and 2-ketovalerate to some extent. We have investigated the effect of mutagenesis of valine 111 and leucine 112 on the substrate specificity. V111 was replaced by glycine, alanine, leucine, and isoleucine while L112 was replaced by alanine, valine, and isoleucine. With the exception of L112I, all mutants retain activity towards pyruvate with $k_{cat}$ values ranging from 40% to 139% of wild-type. All mutants show changes from wild-type in the affinity for ThDP, and several (V111A, L112A, and L112V) show decreases in the affinity for $Mg^{2+}$. Two of the mutants, V111G and V111A, show an increase in the $K_m$ for pyruvate. The activity of each mutant towards 2-ketobutyrate and 2-ketovalerate was investigated and some changes from wild-type were found. For the V111 mutants, the most notable of these is a 3.7-fold increase in the ability to use 2-ketovalerate. However, the largest effect is observed for the L112V mutation which increases the ability to use both 2-ketobutyrate (4.3-fold) and 2-ketovalerate (5.7-fold). The results suggest that L112 and, to a lesser extent, V111 are close to the active site and may interact with the alkyl side-chain of the substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.35-36
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• 2009

In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B^2/R_{SP,ON}$). To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below ~3.8V, and high figure of merit ($V_B^2/R_{SP,ON}$>${\sim}200MW/cm^2$) for a power MOSFET in $V_B$-800V range.

• Bulletin of the Korean Chemical Society
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• v.11 no.4
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• pp.339-342
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• 1990

$Gd_2O_3-ThO_2$ solid solutions containing 8,10 and 12 mol % $ThO_2$ were synthesized with spectroscopically pure $Gd_2O_3,$ and $ThO_2$ polycrystalline powders. X-ray diffraction revealed that all synthesized specimens have the modified fluorite structure, and the lattice parameter of $Gd_2O_3$ is nearly unchanged with increasing $ThO_2$ mol %. Both ac and dc conductivities were measured in the temperature range $500-1100^{\circ}C$ under $Po_2's$ from $10^{-6}$ to $10^{-1}$ atm. The dc conductivities are nearly independent of $Po_2,$ and agree with the ac values. This implies that the solid solutions are ionic conductors. The conductivity increases with increasing $ThO_2$ mol % with an average activation energy of 1.23 eV. An oxygen interstitial defect and ionic hopping conduction are suggested.