• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2004년도 요약집 춘계학술발표대회
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• pp.57.2-57.2
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• 2004

• 한국임상수의학회지
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• 제16권2호
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• pp.265-271
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• 1999

These experiments were performed to investigate the effect of saline, monosodium L-glutamate(MSG), MSG-phenylalanine, and/or phenylalanine on TH-immunoreactivity in arcuate nucleus of hypothalamus and hind limb area of cerebral cortex in rats using the immunohistochemical methods. The result were as follows: 1. TH-immunoreactive neurons in hind limb area of cerebral cortex and arcuate nucleus of hypothalamus were decreased in MSG treated group compared to the saline treated group and also lesions in arcuate nucleus and median eminence of hypothalamus were increased with MSG treatment 2. TH-immunoreactive neurons in median eminence and arcuate nucleus were increased in phenylalanine treated group compared to the saline treated group and also neurons were more increased in lamina V of hind limb area of cerebral cortex with phenylalanine treatment. 3. TH-immunoreactive neurons in median eminence and arcuate nucleus were decreased in MSG-phenylalanine treated group compared to the phenylalanine treated group and increased compared to the MSG treated group. In lamina V of hind limb area of cerebral cortex, TH-immunoreactive neurons were more decreased in MSG-phenylalanine treated group than that of the phenylalanine treated group, and more increased than that of MSG treated group. These experiments indicated that TH-immunoreactive neurons in hypothalamus and cerebral cortex were increased due to the activation of phenylalanine and decreased by suppressing activation of phenylalanine through MSG treatment.

• 대한전자공학회논문지SD
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• 제43권11호
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• pp.1-7
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• 2006

이상적인(ideal) 이중-게이트(double-gate) 벌크(bulk) FinFET의 3차원(3-D) 시뮬레이션을 수행하여 전기적 특성들을 분석하였다. 3차원 시뮬레이터를 이용하여, 게이트 길이($L_g$)와 높이($H_g$), 핀 바디(fin body)의 도핑농도($N_b$)를 변화시키면서 소스/드레인 접합 깊이($X_{jSDE}$)에 따른 문턱전압($V_{th}$), 문턱전압 변화량(${\Delta}V_{th}$), DIBL(drain induced barrier lowering), SS(subthreshold swing)의 특성들을 살펴보았다. 게이트 높이가 35 nm인 소자에서 소스/드레인 접합 깊이(25 nm, 35 nm, 45 nm) 변화에 따라, 각각의 문턱전압을 기준으로 게이트 높이가 $30nm{\sim}45nm$로 변화 될 때, 문턱전압변화량은 20 mV 이하로 그 변화량이 매우 적음을 알 수 있었다. 낮은 핀 바디 도핑농도($1{\times}10^{16}cm^{-3}{\sim}1{\times}10^{17}cm^{-3}$)에서, 소스/드레인 접합 깊이가 게이트전극보다 깊어질수록 DIBL과 SS는 급격히 나빠지는 것을 볼 수 있었고. 이러한 특성저하들은 $H_g$ 아래의 ${\sim}10nm$ 위치에 국소(local) 도핑을 함으로써 개선시킬 수 있었다. 또한 local 도핑으로 소스/드레인 접합 깊이가 얕아질수록 문턱전압이 떨어지는 것을 개선시킬 수 있었다.

• 대한간호
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• 제15권3호통권83호
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• pp.44-50
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• 1976

From 13th of sept to 15th of Nov. in 1975 A Survey was Conducted to know the degree of knowledge and the attitudes for the V.D. and the situations of present life o 102 prostitutes registered to the V.D. Clinic Center Paju-gun. Kyung ki province, the conc

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.170-170
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• 2006

[ ${\pi}-conjugated$ ] organic and polymeric semiconductors are receiving considerable attention because of their suitability as an active layer for electronic devices. An organic inverter with a full swing and a high gain can be obtained through the good qualities of the transfer characteristics of organic thin-film transistors (OTFTs); for example, a low leakage current, a threshold voltage ($V_{th}$) close to 0 V, and a low sub-threshold swing. One of the most critical problems with traditional organic inverters is the high operating voltage, which is often greater than 20 V. The high operating voltage may result in not only high power consumption but also device instabilities such as hysteresis and a shift of $V_{th}$ during operation. In this paper, low-voltage and little-hysteresis pentacene OTFTs and inverters in conjunction with PEALD $Al_{2}O_{3}\;and\;ZrO_{2}$ as the gate dielectrics are demonstrated and the relationships between the transfer characteristics of OTFT and the voltage transfer characteristics (VTCs) of inverter are investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.399-402
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• 2006

A new voltage-scaled compensation pixel which employs 3 p-type poly-Si TFTs and 2 capacitors without additional control line has been proposed and verified. The proposed pixel does not employ the $V_{TH}$ memorizing and cancellation, but scales down the inevitable $V_{TH}$ variation of poly-Si TFT. Also the troublesome narrow input range of $V_{DATA}$ is increased and the $V_{DD}$ supply voltage drop is suppressed. In our experimental results, the OLED current error is successfully compensated by easily controlling the proposed voltage scaling effects.

• Journal of Information Display
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• 제7권3호
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• pp.9-12
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• 2006

A new voltage-scaled compensation pixel which employs 3 p-type poly-Si TFTs and 2 capacitors without additional control line has been proposed and verified. The proposed pixel does not employ the $V_{TH}$ memorizing and cancellation, but scales down the inevitable $V_{TH}$ variation of poly-Si TFT. Also the troublesome narrow input range of $V_{DATA}$ is increased and the $V_{DD}$ supply voltage drop is suppressed. In our experimental results, the OLED current error is successfully compensated by easily controlling the proposed voltage scaling effects.

• 접착 및 계면
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• 제22권3호
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• pp.91-97
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• 2021

본 연구는 Parylene C 유전체 표면에 유기 자기조립단분자막(self-assembled monolayer, SAM) 중간층을 도입함으로써 표면특성을 제어하고 최종적으로 유기전계효과 트랜지스터(organic field-effect transistors, OFETs)의 전기적 안정성을 향상시킨 결과를 제시하였다. 유기 중간층을 적용함으로써, Parylene C 게이트 유전체의 표면 에너지를 제어하였으며, OFET의 가장 중요한 성능변수인 전계효과 이동도(field-effect transistor, μ_FET)와 문턱 전압 (threshold voltage, V_th)의 성능향상과 구동 안정성을 증대시켰다. 단순히 Parylene C 유전체를 적용한 Bare OFET에서 μ_FET 값은 0.12 cm²V^-1s^-1가 측정되었으나, hexamethyldisilazane (HMDS)과 octadecyltrichlorosilane (ODTS)를 중간층으로 적용된 소자에서는 각각 0.32과 0.34 cm²V^-1s^-1로 μ_FET가 증가하였다. 또한 1000번의 transfer 특성의 반복측정을 통해 ODTS 처리한 OFET의 μ_FET와 V_th의 변화가 가장 작게 나타남을 확인하였다. 이 연구를 통해 유기 SAM 중간층, 특히 ODTS는 효과적으로 Parylene C 표면을 알킬 사슬로 덮어 극성도를 낮춤과 함께 전하 트래핑을 감소시켜 소자의 전기적 구동 안정성을 증가시킬 수 있음을 확인하였다.

• 전자공학회논문지SC
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• 제41권6호
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• pp.17-25
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• 2004

본 논문에서는, 저전력 소비를 위한 새로운 저전압 스윙 도미노 로직 회로를 제안한다. 전력 소비를 줄이기 위해, 도미노 로직의 예비충전(precharge) 노드와 출력 노드가 0V부터 V/sub REF/-V/sub TH/까지의 범위에서 스윙하도록 설계하였다. 여기서, V/sub REF/=VDD-nV/sub TH/ (n=0, 1, 2, 3)로 정의되며 설계자는 요구되는 속도와 전력 소비 특성을 감안하여 n 값을 설정할 수 있다. 이와 같은 특성은 누설 전류 없이 저전압 입력을 받을 수 있는 인버터의 구조에 의해 얻어진다. 제안된 도미노 로직을 적용하여 4×4 Braun 곱셈기를 설계하였고 공급전압 3.3V를 갖는 0.35㎛ n-well CMOS 공정으로 제작하였다. 제작된 칩은 기존 회로들과 비교할 때, 30% 이상의 전력 감소효과를 나타내며 전력-지연 곱에서도 우수한 성능을 나타내었다.

• Archives of Pharmacal Research
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• 제19권5호
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• pp.374-380
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• 1996

Sprague-Dawley male rats (150 g) were chronically treated with 5 v/v % ethanol admixed with nutritionally complete liquid diet and fed ad libitum for 3 weeks. One half of each group was exposed to cold stress at 4 ^{\circ}C either for 24 h (for determination of mRNA by in situ hybridization) or for 48 h (for determination of enzyme activity). Chronic ethanol treatment (ethanol) did not affect tyrosine hydroxylase(TH) mRNA level in locus coeruleus(LC) of brain and adrenal medulla(AM) compared to controls. Cold stress showed strong increase of TH mRNA level in LC and AM compared to controls. Pretreated ethanol reduced the increased TH mRNA level by cold stress in LC and AM. Ethanol did not affect TH activity in LC and adenal glands(adrenals). Cold stress increased TH activity in LC but not in adrenals. Pretreated ethanol did not reduce the increased TH activity by cold stress in LC but this result was not shown in adrenals. Phenylethanolamine-N-methyltransferase(PNMT) activity in $C_{1}$$C_{2}$ and adrenals increased only in ethanol treated group. THese results suggest that ethanol does not affect TH mRNA level and activity in LC and adrenals, but increases PNMT activity in $C_{1}$$C_{2}$ and adrenals in normal rat. It is also suggested that pretreated ethanol reduces the magnitude of cold stress response, that is induction of TH mRNA in LC and AM, and does not reduce the protein activation of TH that is also cold stress response in LC.