• Title/Summary/Keyword: $V_{S30}$지도

검색결과 223건 처리시간 0.024초

전자빔 조사가 ZnO 박막의 전기적 특성 변화에 미치는 영향 (Influence of Electron Beam Irradiation on the Electrical Properties of ZnO Thin Film Transistor)

  • 최준혁;조인환;김찬중;전병혁
    • 한국전기전자재료학회논문지
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    • 제30권1호
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    • pp.54-58
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    • 2017
  • The effect of low temperature ($250^{\circ}C$) heat treatment after electron irradiation (irradiation time = 30, 180, 300s) on the chemical bonding and electrical properties of ZnO thin films prepared using a sol-gel process were examined. XPS (X-ray photoelectron spectroscopy) analysis showed that the electron beam irradiation decreased the concentration of M-O bonding and increased the OH bonding. As a result of the electron beam irradiation, the carrier concentration of ZnO films increased. The on/off ratio was maintained at ${\sim}10^5$ and the $V_{TH}$ values shifted negatively from 11 to 1 V. As the irradiation time increased from 0 to 300s, the calculated S. S. (subthreshold swing) of ZnO TFTs increased from 1.03 to 3.69 V/decade. These values are superior when compared the sample heat-treated at $400^{\circ}C$ representing on/off ratio of ${\sim}10^2$ and S. S. value of 10.40 V/decade.

1,700 V급 Static Induction Thyristor 소자 최적화 (Optimization of 1,700 V Static Induction Thyristor Devices)

  • 문경숙;구상모
    • 한국전기전자재료학회논문지
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    • 제30권7호
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    • pp.423-426
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    • 2017
  • The designing approaches with consideration offabrication process technologies for high-frequency, high-powered, silicon-based static induction thyristors (SITH) are presented. The effects of doping concentration and thickness on the I-V characteristics and power performance of the devices are discussed. The dependence of SITH switching performances on material, geometric structure, and technological parameters isexamined by using two-dimensional simulations. Thick-epitaxy technology is found to be one of the most critical steps in realizing the proposed structure and switching times, $t_{off}$, of SITH, which may be reduced to below ${\sim}0.26{\mu}s$ for the proposed 1,700 V SITH devicesafter optimization.

전자 수송층을 삽입한 용액 공정형 산화물 트랜지스터의 특성 평가 (Characterization of Solution-Processed Oxide Transistor with Embedded Electron Transport Buffer Layer)

  • 김한상;김성진
    • 한국전기전자재료학회논문지
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    • 제30권8호
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    • pp.491-495
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    • 2017
  • We investigated solution-processed indium-zinc oxide (IZO) thin-film transistors (TFTs) by inserting a 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD) buffer layer. This buffer layer efficiently tuned the energy level between the semiconducting oxide channel and metal electrode by increasing charge extraction, thereby enhancing the overall device performance: the IZO TFT with embedded PBD layer (thickness: 5 nm; width: $2,000{\mu}m$; length: $200{\mu}m$) exhibited a field-effect mobility of $1.31cm^2V^{-1}s^{-1}$, threshold voltage of 0.12 V, subthreshold swing of $0.87V\;decade^{-1}$, and on/off current ratio of $9.28{\times}10^5$.

E-빔 증착된 Sn 전구체의 황화 열처리 온도 및 시간에 따른 SnSx 박막 성장 효과 (Effect of the Sulfurization Temperature and Annealing Time of E-Beam Evaporated Sn Precursors on the Growth of SnSx Thin Films)

  • 황팅지엔;김제하
    • 한국전기전자재료학회논문지
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    • 제30권11호
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    • pp.734-739
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    • 2017
  • We prepared $SnS_x$ thin films on both soda-lime glass (SLG) and molybdenum(Mo)/SLG substrates by a two-step process using a Sn precursor followed by sulfur reaction in rapid thermal annealing (RTA) at different sulfurization temperatures ($Ts=200^{\circ}C$, $230^{\circ}C$, $250^{\circ}C$, and $300^{\circ}C$) and annealing times ($t_s=10min$ and 30 min). The single SnS phase was dominant for $200^{\circ}C{\leq}T_s$<$250^{\circ}C$, while an additional phase of $SnS_2$ was appeared at $T_s{\geq}250^{\circ}C$ alongside SnS. The SnS grains in all the samples showed strong growth along the preferred [040] direction. The band-gap energy ($E_g$) of the films was estimated to be 1.24 eV.

PZN-BT-PT 세라믹스를 이용한 전왜 BUZZER의 음향 특성 (Acoustic Properties of Electrostrictive Buzzer Using PZN-BT-PT Ceramics)

  • 유준현;김현재;박창엽
    • 대한전기학회논문지
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    • 제41권1호
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    • pp.50-55
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    • 1992
  • Piezoelectric Buzzer which has been generally used requires about 30kV/cm poling process and has the aging effects. In this study, 0.85 PZN - 0.10 BT - 0.05 PT system ceramics with additives of 0 - 2 wt% YS12TOS13T were fabricated and investigated on electromechanical coupling coefficient(kS1pT), electric field induced charge coefficient(dS131T), and sound level. As the results, in the 0.4 wt% YS12TOS13T added composition ceramics compared with the basic, kS1pT was increased from 0.355 to 0.39 and induced piezoelectric d constant increased from 204 to 220 x 10S0-12T (C/N) and sound level of electrostrictive Buzzer has the highest value of 71.5 dB under 8kV/cm bias electric field.

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알로에 추출물이 모발보호에 미치는 영향 (Effects of Aloe Extract on the Protection of Hair)

  • 이영조;장창곡
    • 융합정보논문지
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    • 제9권11호
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    • pp.254-258
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    • 2019
  • 건강하고 아름다운 모발을 보호하기 위해 펌 제에 알로에 추출물을 첨가해 모발보호 효과를 알아보고자 한다. 처치 군은 그룹 II(파마 약만 사용한 그룹), 그룹 III(알로에 추출물을 1제에만 첨가), 그룹 IV(알로에 추출물을 2제에만 첨가), 그룹 V(알로에 추출물을 1제와 2제에 첨가)로 나누어 진다. 실험 모발은 1년간 영구 염색 등 화학치료를 받지 않은 20대, 30대, 40대 여성의 모발에서 채취해 100% 알로에 추출용액을 사용한다. 머리카락 굵기와 큐티클, 인장강도, 신장 및 연신율을 측정하기 위해 실험 환경은 28.9도, 습도는 72%로 유지했다. 모든 통계 시험은 5% 유의수준에서 수행되었다. 큐티클, 연신율, 형성률이 현저히 향상되었고(P<.05) 큐티클은 그룹 V에서, 연신율은 그룹 III에서 가장 좋았다. 결론적으로 파마 치료에 첨가된 알로에는 큐티클, 신장률, 모발 형성에 효과적이었다.

고집적 메모리의 yield 개선을 위한 전기적 구제회로 (An Electrical Repair Circuit for Yield Increment of High Density Memory)

  • 김필중;김종빈
    • 한국전기전자재료학회논문지
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    • 제13권4호
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    • pp.273-279
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    • 2000
  • Electrical repair method which has replaced laser repair method can replace defective cell by redundancy’s in the redundancy scheme of conventional high density memory. This electrical repair circuit consists of the antifuse program/read/latch circuits, a clock generator a negative voltage generator a power-up pulse circuit a special address mux and etc. The measured program voltage of made antifuses was 7.2~7.5V and the resistance of programmed antifuses was below 500 Ω. The period of clock generator was about 30 ns. The output voltage of a negative voltage generator was about 4.3 V and the current capacity was maximum 825 $mutextrm{A}$. An antifuse was programmed using by the electric potential difference between supply-voltage (3.3 V) and output voltage generator. The output pulse width of a power-up pulse circuit was 30 ns ~ 1$mutextrm{s}$ with the variation of power-up time. The programmed antifuse resistance required below 44 ㏀ from the simulation of antifuse program/read/latch circuit. Therefore the electrical repair circuit behaved safely and the yield of high densitymemory will be increased by using the circuit.

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22.9 kV 초전도케이블 시스템의 절연특성 평가 (Dielectric Characteristics Evaluation of 22.9 kV HTS Power Cable System)

  • 최하옥;손송호;임지현;양형석;김동락;최연석;이병섭;정원묵;류희석;마용호;류경우;황시돌
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.293-293
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    • 2008
  • 초전도 케이블은 저손실 대용량 전력수송이 가능한 전력케이블로서 대도시의 전력 공급문제를 해결할 수 있는 환경 친화적 신개념의 전력케이블이다. 한전 전력연구원 고창전력시험센터에서는 2006년에 22.9 kV, 100 m, 50 MVA급 초전도케이블 시스템을 설치하여 초전도케이블 실용화를 위한 신뢰성 시험을 실시하고 있다. 전력케이블의 주요한 신뢰성 요인 중의 하나가 절연특성이며 초전도케이블의 절연특성은 운전온도가 액체질소 온도이므로 절연지에 수분이 고화하여 일반적인 전력케이블보다 좋은 절연특성을 보이는 것으로 알려져 있다. 초전도 케이블은 절연지와 액체질소에 의해 절연이 이루어지며 열적, 기계적, 전기적, 환경적 스트레스에 의해 열화가 발생할 수 있다. 절연층에 이러한 스트레스가 누적되면서 void가 발생하게 되고 전계집중 현상에 의해 절연성능이 저하되며 과다한 열화의 발생시 절연파괴가 일어나게 된다. 온 발표에서는 운전온도 66.4 K에서 1.5 $U_0$ (20 kV) 전압의 30일간 연속 인가 시험과 초전도 케이블의 절연열화 가속시험을 통하여 얻은 부분방전 및 정전용량의 변화 등의 절연특성 평가 결과에 대해 논의한다.

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765kV 2회선 송전선 활선 작업자의 차폐복 자계저감 특성검토 (Magnetic Field Reduction Characteristics of Hot-Line Worker's Shielding Wear for 765kV Double Circuit Transmission Line)

  • 민석원;박준형
    • 전기학회논문지
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    • 제56권9호
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    • pp.1632-1637
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    • 2007
  • This paper analyses current densities induced inside human body of lineman for 765kV transmission line when he wears a protective cloth or not. Applying the boundary element method, we calculate current densities induced in organs inside a worker in case he was located at 15[cm], 30[cm], 50[cm], and 100[cm] far from a prefabricated jumper. As results of study, we find a maximum current density induced in all organs may be higher than $10[mA/m^2]$ if he does not wear protective clothes. We also know high permeability materials can lower current density more than high conductivity materials.

Assembling and Insulation Test of 1MVA Single Phase HTS Transformer for Power Distribution

  • Kim, S. H.;Kim, W. S.;Kim, J. T.;Park, K. D.;H. G. Joo;G. W. Hong;J. H. Han;Lee, S. J.;S. Hahn
    • 한국초전도ㆍ저온공학회논문지
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    • 제5권3호
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    • pp.30-33
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    • 2003
  • 1MVA high temperature superconducting (HTS) transformer with double pancake windings made of BSCCO-2223 HTS tapes was designed and manufactured. And prototype transformer with the same capacity was manufactured also. The each rated voltage of the HTS transformer is 22.9 kV and 6.6 kV. Four parallel BSCCO-2223 HTS tapes were wound in the double pancake windings of low voltage side. In order to distribute the currents equally in each HTS tapes, the three times transposition was performed between the double pancake windings. The windings of prototype transformer were wound using copper tape with the same size as BSCCO-2223 HTS tape. The core of the transformer was designed and manufactured as a shell type core made of laminated silicon steel plate. The several characteristics tests for the prototype transformer were performed in liquid nitrogen and insulation tests were accomplished also.