• Title/Summary/Keyword: $V_{2}O_{5}$ addition

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Photodecomposition of Concentrated Ammonia over Nanometer-sized TiO2, V-TiO2, and Pt/V-TiO2 Photocatalysts

  • Choi, Hyung-Joo;Kim, Jun-Sik;Kang, Mi-Sook
    • Bulletin of the Korean Chemical Society
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    • v.28 no.4
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    • pp.581-588
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    • 2007
  • To enhance the photodecomposition of concentrated ammonia into N2, Pt/V-TiO2 photocatalysts were prepared using solvothermal and impregnation methods. Nanometer-sized particles of 0.1, 0.5 and 1.0 mol% V-TiO2 were prepared solvothermally, and then impregnated with 1.0 wt% Pt. The X-ray diffraction (XRD) peaks assigned to V2O5 at 30.20 (010) and Pt metal at 39.80 (111) and 46.20 (200) were seen in the 1.0 wt% Pt/ 10.0 mol% V-TiO2. The particle size increased in the order: pure TiO2, V-TiO2 and Pt/V-TiO2 after thermal treatment at 500 °C, while their surface areas were in the reverse order. On X-ray photoelectron spectroscopy (XPS), the bands assigned to the Ti2p3/2 and Ti2p1/2 of Ti4+-O were seen in all the photocatalysts, and the binding energies increased in the order: TiO2 < Pt/V-TiO2 < V-TiO2. The XPS bands assigned to the V2p3/2 (517.85, 519.35, and 520.55 eV) and V2p1/2 (524.90 eV) in the V3+, V4+ and V5+ oxides appeared over V-TiO2, respectively, while the band shifted to a lower binding energy with Pt impregnation. The Pt components of Pt/ V-TiO2 were identified at 71.60, 73.80, 75.00 and 76.90 eV, which were assigned to metallic Pt 4f7/2, PtO 4f7/2, PtO2 4f7/2, and PtO 4f5/2, respectively. The UV-visible absorption band shifted closer towards the visible region of the spectrum in V-TiO2 than in pure TiO2 and; surprisingly, the Pt/V-TiO2 absorbed at all wavelengths from 200 to 800 nm. The addition of vanadium generated a new acid site in the framework of TiO2, and the medium acidic site increased with Pt impregnation. The NH3 decomposition increased with the amount of vanadium compared to pure TiO2, and was enhanced with Pt impregnation. NH3 decomposition of 100% was attained over 1.0 wt% Pt/1.0 mol% V-TiO2 after 80 min under illumination with 365 nm light, although about 10% of the ammonia was converted into undesirable NO2 and NO. Various intermediates, such as NO2, -NH2, -NH and NO, were also identified in the Fourier transform infrared (FT-IR) spectra. From the gas chromatography (GC), FT-IR and GC/mass spectroscopy (GC/MS) analyses, partially oxidized NO and NO2 were found to predominate over V-TiO2 and pure TiO2, respectively, while both molecules were reduced over Pt/V-TiO2.

Electrical Properties of $Li_2O-V_2O_5-P_2O_5$ Glasses for Solid State Electrolyte (고체전해질용 $Li_2O-V_2O_5-P_2O_5$ 유리의 전기적 특성)

  • Lee, Chang-Hee;Son, Myung-Mo;Lee, Hun-Soo;Gu, Hal-Bon;Park, Hee-Chan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.334-335
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    • 2005
  • Ternary tellurite glassy systems ($Li_2O-V_2O_5-P_2O_5$) have been synthesised using Vanadium oxide as a network former and Lithium oxide as network modifier. The addition of a metal? oxide makes them electric or mixed electric-ionic conductors, which are of potential interest as cathode' materials for solid-state batteries. This glass-ceramics crystallized from the $Li_2O-V_2O_5-P_2O_5$ system are particularly interesting, because they exhibit high conductivity (up to $5.95\times10^{-4}$ S/cm) at room temperature. the glass samples were prepared by quenching the melt on the copper plate and the glass-ceramics were heat-treated at crystallizing temperature determined from differential thermal analysis (DTA). The electric D.C conductivity result have been analyzed in terms of a small polaron-hopping model.

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Effect of CuO-V2O5 Addition on Microwave Dielectric Properties of (Pb0.45Ca0.55(Fe0.5Nb0.5)0.9Sn0.1]O3 Ceramics

  • Ha, Jong-Yoon;Choi, Ji-Won;Yoon, Ki-Hyun;Choi, Doo-Jin;Yoon, Seok-Jin;Kim, Hyun-Jai
    • Journal of the Korean Ceramic Society
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    • v.41 no.1
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    • pp.9-12
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    • 2004
  • The effect of x wt% CuO-y wt% $V_2O_5$ content on the microwave properties of $(Pb_{0.45}Ca_{0.55})[(Fe_{0.5}Nb_{0.5})_{0.9}Sn_{0.1}]O_3$ (PCFNS) ceramics was investigated. In order to decrease the sintering temperature and use as a Low Temperature co-firing Ceramics (LTCC), CuO-$V_2O_5$ are added in the PCFNS. The bulk density, dielectric constant (${\varepsilon}_r$) and quality factor(Q${\cdot}f_0$) increased with increase in CuO content within a limited value. The microwave properties were degraded with increases in $V_2O_5$ content. The temperature coefficient of the resonant frequency (${\tau}_f$) of PCFNS was shifted to positive value abruptly with increasing the $V_2O_5$ content, while the ${\tau}_f$ was slightly shifted to positive value with increasing the CuO content. The optimized microwave properties, ${\varepsilon}_r$ = 88, Q${\cdot}f_0$ = 6100 (GHz), and ${\tau}_f$ = 18 ppm/$^{\circ}C$, were obtained in $(Pb_{0.45}Ca_{0.55})[(Fe_{0.5}Nb_{0.5})_{0.9}Sn_{0.1}]O_3$ with 0.2wt% CuO 0.05 wt% $V_2O_5$ and sintered at $1000^{\circ}C$ for 3 h. The relationship between the microstructure and microwave dielectric properties of ceramics was studied by X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM)

Magnetic Properties of Chip Inductors Prepared with V2O5-doped Ferrite Pastes (V2O5 도핑한 페라이트 페이스트로 제조된 칩인덕터의 자기적 특성)

  • Je, Hae-June
    • Journal of the Korean Magnetics Society
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    • v.13 no.3
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    • pp.109-114
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    • 2003
  • The purpose of this study Is to investigate the effect of $V_2$O$_{5}$ addition on the microstructures and magnetic properties of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2O_{5}$-doped NiCuZn ferrite pastes. With increasing the $V_2O_{5}$ content, the exaggerated grain growth of ferrite layers was developed due to the promotion of Ag diffusion and Cu segregation into the grain boundaries oi ferrites, which affected significantly the magnetic properties of the chip inductors. After sintering at $900^{\circ}C$, the inductance at 10 MHZ of the 0.5 wt% $V_2O_{5}$-doped chip inductor was 3.7 ${\mu}$H less than 4.2 ${\mu}$H of the 0.3 wt% $V_2O_{5}$-doped one, which was thought to be caused by the residual stress at the ferrite layers increased with the promotion of Ag diffusion and Cu segregation. The quality factor of the 0.5 wt% $V_2O_{5}$-doped chip inductor decreased with increasing the sintering temperature, which was considered to be caused by the electrical resistivity of the ferrite layer decreased with the promotion of Ag/cu segregation at the grain boundaries and the growth of the mean grain size of ferrite due to exaggerated grain growth of ferrite layers.

Catalytic Conversion of 1,2-Dichlorobenzene Using V2O5/TiO2 Catalysts by a Thermal Decomposition Process (기상고온합성 V2O5/TiO2 촉매에 의한 1,2-Dichlorobenzene 제거 특성)

  • Chin, Sung-Min;Jurng, Jong-Soo;Lee, Jae-Heon
    • Journal of Environmental Science International
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    • v.17 no.11
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    • pp.1273-1279
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    • 2008
  • This study examined the catalytic destruction of 1,2-dichlorobenzene on ${V_2}{O_5}/TiO_2$ nanoparticles. The ${V_2}{O_5}/TiO_2$ nanoparticles were synthesized by the thermal decomposition of vanadium oxytripropoxide and titanium. The effects of the synthesis conditions, such as the synthesis temperature and precursor heating temperature, were investigated. The specific surface areas of ${V_2}{O_5}/TiO_2$ nanoparticles increased with increasing synthesis temperature and decreasing precursor heating temperature. In addition, the removal efficiency of 1,2-dichlorobenzene was promoted by a decrease in heating temperature. However, the removal efficiency of 1,2-dichlorobenzene was decreased by an anatase to rutile phase transformation at temperatures $1,300^{\circ}C$.

High-k Gate Dielectric for sub-0.1$\mu\textrm{m}$ MOSFET (차세대 sub-0.1$\mu\textrm{m}$급 MOSFET소자용 고유전율 게이트 박막)

  • 황현상
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.20-23
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    • 2000
  • We have investigated a process for the preparation of high-quality tantalum oxynitride ( $T_{a}$ $O_{x}$ $N_{y}$) via the N $H_3$ annealing of 7$_{a2}$ $O_{5}$, for use in gate dielectric applications. Compared with tantalum oxide (7$_{a2}$ $O_{5}$), a significant improvement in the dielectric constant was obtained by the N $H_3$ treatment. In addition, light reoxidation in a wet ambient at 45$0^{\circ}C$ resulted in a significantly reduced leakage current. We confirmed nitrogen incorporation in the tantalum oxynitride ( $T_{a}$ $O_{x}$ $N_{y}$ by Auger Electron Spectroscopy. By optimizing the nitridation and reoxidation process, we obtained an equivalent oxide thickness as thin as 1.6nm and a leakage current of less than 10mA/$\textrm{cm}^2$ at 1.5V..5V..5V..5V..5V..5V.

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Ag and Cu Precipitation in Multi-Layer Chip Inductors Prepared with V2O5 Doped NiCuZn Ferrites (V2O5 도핑된 NiCuZn 페라이트로 제조된 칩인덕터에서의 Ag/cu 석출)

  • Je, Hae-June;Kim, Byung-Kook
    • Korean Journal of Materials Research
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    • v.13 no.8
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    • pp.503-508
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    • 2003
  • The purpose of this study is to investigate the effect of $V_2$$O_{5}$ addition on the Ag and Cu precipitation in the NiCuZn ferrite layers of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2$$O_{5}$ -doped ferrite pastes. With increasing the $V_2$$O_{5}$ content and sintering temperature, Ag and Cu oxide coprecipitated more and more at the polished surface of ferrite layers during re-annealing at $840^{\circ}C$. It was thought that during the sintering process, V dissolved in the NiCuZn ferrite lattice and the Ag-Cu liquid phase of low melting point was formed in the ferrite layers due to the Cu segregation from the ferrite lattice and Ag diffusion from the internal electrode. During re-annealing at $840^{\circ}C$, the Ag-Cu liquid phase came out the polished surface of ferrite layers, and was decomposed into the isolated Ag particles and the Cu oxide phase during the cooling process.

Characterization by Solid-State $^51V$ NMRand X-ray Diffraction of Vanadium Oxide Supported on ZrO₂

  • 손종락;박만영;배영일
    • Bulletin of the Korean Chemical Society
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    • v.17 no.3
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    • pp.274-278
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    • 1996
  • Vanadium oxide-zirconia catalysts were prepared by dry impregnation of powdered Zr(OH)4 with aqueous solution of NH4VO3. The characterization of prepared catalysts was performed using 51V solid state NMR, XRD, and DSC. The addition of vanadium oxide up to 9 mol% to zirconia shifted the phase transitions of ZrO2 from amorphous to tetragonal toward higher temperatures due to the interaction between vanadium oxide and zirconia. On the basis of results of XRD and DSC, it is concluded that the content of V2O5 monolayer covering most of the available zirconia was 9 mol%. The crystalline V2O5 was observed only with the samples containing V2O5 content exceeding the formation of complete monolayer (9 mol%) on the surface of ZrO2.

Electrical Properties of $LI_2O-V_2O5-TeO_2$ Glasses for Solid State Electrolyte (전해절용 $Li_2O-V_2O_5-TeO_2$ 계 글라스 세라믹스의 전기적 특성)

  • Lee, Chang-Hee;Park, Jae-Hyeon;Son, Myung-Mo;Lee, Hun-Soo;Gu, Hal-Bon;Park, Hee-Chan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.304-304
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    • 2006
  • Ternary tellurite glassy systems ($Li_2O-V_2O_5-TeO_2$) have been synthesised using Vanadium oxide as a network former and Lithium oxide as network modifier. The addition of a metal oxide makes them electric or mixed electric-ionic conductors, which are of potential interest as cathode materials for solid-state batteries. This glass-ceramics crystallized from the $Li_2O-V_2O_5-TeO_2$ system are particularly interesting, because they exhibit high conductivity (up to $5.63{\times}10^{-5}$ S/cm) at room temperature the glass samples were prepared by quenching the melt on the copper plate and the glass-ceramics were heat-treated at crystallizing temperature determined from differential thermal analysis (DTA). The electric DC conductivity result have been analyzed in terms of a small polaron-hopping model.

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V2O5-P2O5-ZnO-Sb2O3 Glass Frit Materials with BaO and Al2O3 for Large-sized Dye-sensitized Solar Cell Sealing

  • Lee, Han Sol;Cho, Jae Kwon;Hwang, Jae Kwon;Chung, Woon Jin
    • Journal of the Korean Ceramic Society
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    • v.52 no.2
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    • pp.114-118
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    • 2015
  • $V_2O_5-P_2O_5-ZnO-Sb_2O_3$ glasses modified with BaO and $Al_2O_3$ are synthesized as a sealing material for large-scale dye-sensitized solar cells (DSSCs). A compositional study is performed in order to determine the glass that can be sintered below $500^{\circ}C$ with a high chemical stability against the electrolyte. The flow size of the glasses after the heat treatment and the glass stability are increased with the addition of $Al_2O_3$ and BaO, while the glass transition temperature is decreased. After the reaction with the electrolyte at $60^{\circ}C$ for 72 h, the addition of 5 mol% of BaO and 2 mol% of $Al_2O_3$ considerably enhances the chemical stability of the glass. X-ray diffraction (XRD) and scanning electron microscope (SEM) are used to examine the reaction between the electrolyte and glasses. The structural contribution of the additives is also investigated and discussed.