• Journal of the Korean Ceramic Society
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• v.25 no.6
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• pp.704-712
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• 1988

In order to investigate the effect of the second phase on Al2O3 matrix, SiC whisker was dispersed in Al2O3 matrix as a second phase over the content range of 5vol% to 20vol%. To this mixture, Y2O3 or TiO2 powder was added as a sintering additive before isostatically pressing and pressureless sintering at 1800-190$0^{\circ}C$ for 90min in N2 atmosphere. With increasing SiC whisker content, relative densities of composites were decreased and the grain growth of Al2O3 was restricted. When Y2O3 was added as a sintering aid the sintering temperature was 180$0^{\circ}C$, the maximum values of flexural strength, hardness and fracture toughness were 537MPa, 12.1GPa, 3.7MPa.m1/2, respectively. However, when the sintering temperature was elevated to 190$0^{\circ}C$, maximum values of flexural strength, hardness and fracture toughness were 453MPa, 17.5GPa, 4.9MPa.m1/2, respectively. Improved mechanical properties are assumed to be attributed to the crack deflection by the second phase SiC whisker and whisker pullout mechanism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.243-246
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• 1998

(Ba, Sr)TiO$_3$[BST] thin films were fabricated on Pt/SiO$_2$/Si substrate by RF sputtering technique. The structural, dielectric and electrical properties of BST thin films were investigated with Ar/O$_2$ ratio. Dielectric constant and dielectric loss of the BST thin film were about 1020 and 2.0[%], respectively. (at RF power 80W, post annealing temperature $650^{\circ}C$, deposition pressure of 5mTorr and Ar/O$_2$=80/20). For the BST(Ar/O$_2$=80/20) thin film with Polarization switching cycles of 10$^{10}$ , remanent polarization and coercive field were 0.084[$\mu$C/cm$^2$], 1.954[kV/cm], respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.31-34
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• 2006

In this study, $(Ba_{0.7}\;Sr_{0.3})TiO_3$ was coated on Pt/Ti/$SiO_2$/Si wafer by using Sol-Gel method. Coating process was repeated 3~5 times and then sintered at 750[$^{\circ}C$] for 1 hour. Each specimen was analyzed structure and electrical characteristics. In structure characteristics, EDX analyzed the samples ratio of the formation on the structural property. Thermal behavior was observed with TG-DTA and concluded that the heat-treatment of the samples was degreed 750[$^{\circ}C$]. Surface and section of thin films were observed with SEM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.105-108
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• 2005

The Pb(Zr,Ti)O$_3$ thin films were fabricated with Pb(La,Ti)O$_3$ buffers in-situ onto Pt/Ti/SiO$_2$/Si substrates by pulsed laser deposition method. We have observed the increase of the remanent polarization using PLT buffers. The remanent polarization value of 33.4 $\mu$C/$\textrm{cm}^2$ and the coercive field value of 66.4 kV/cm were obtained when the PLT tufter was deposited for 15 seconds. Enhancement of the polarization is resulted from the enhanced orientation of PZT thin film because of the PLT buffet layer.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.11
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• pp.526-530
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• 2002

The $(Sr_{0.9}Ca_{0.1})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The composition of SCT thin film deposited on Si substrate at room temperature is close to stoichiometry(1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by ammealing at $600^{\cric}C$. The temperature dependence of dielectric loss showed a value within 0.02 in temperature ranges of -80 ${\sim}$ +90$^{\circ}C$. The capacitance characteristics showed a stable value within ${\pm}$4%. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films was observed at the frequency above 200kHz.

• Bulletin of the Korean Chemical Society
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• v.26 no.2
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• pp.233-237
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• 2005

Cyclopentadiene compounds, 2-[CR'R(OMe)]-1,3-Me$_2C_5H_3$ (R, R' = 2,2'-biphenyl, 2) and 2-[CR'R(OSiMe$_3$)]-1,3-Me$_2C_5H_3$ (R, R' = 2,2'-biphenyl, 3; R = ph, R' = ph, 4; R = 2-naphthyl, R' = H, 5) are readily synthesized from 2-bromo-3-methoxy-1,3-dimethylcyclopentene (1). Reaction of the cyclopentadienes with Ti(NMe$_2$)$_4$ in toluene results in clean formation of the cyclopentadienyl tris(dimethylamido)titanium complexes, which are transformed to the trichloride complexes, 2-[CR'R(OMe)]-1,3-Me$_2C_5H_2$}TiCl$_3$ (R, R' = 2,2'-biphenyl, 6) and {2-[CR'R(OSiMe$_3$)]-1,3-Me$_2C_5H_2$}TiCl$_3$ (R, R' = 2,2'-biphenyl, 7; R = ph, R' = ph, 8; R = 2-naphthyl, R' = H, 9). Attempts to form C1-bridged Cp/oxido complexes by elimination of MeCl or Me$_3$SiCl were not successful. X-ray structures of 6, 7 and an intermediate complex {2-[Ph$_2$C(OSiMe$_3$)]-1,3-Me$_2C_5H_2$}TiCl$_2$(NMe$_2$) (10) were determined.

• The Journal of Natural Sciences
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• v.8 no.1
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• pp.53-59
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• 1995

Effects of sintering additives and sintering temperatures on the sintering behavior and mechanical properties of SiC whisker reinforced alumina composites have been investigated in this study. Dense (>95% TD) composites were obtained by using 2 wt% $Y_2O_3$ as liquid phase sintering additive. But only porous composite could be obtained when the sintering additives were MgO and $TiO_2$, which were known as the sintering additives for solid state sintering of alumina. Bending strength and fracture toughness were enhanced by reinforcement of SiC whisker. It is belived from the microstructure investigation that the enhanced by strength and toughness could be attribute to the reinforcing and grain growth inhibition effects of SiC whisker. After HIP treatment, fully dense composites were obtained and further enhanced mechanical properties achieved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.655-659
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• 2010

Nanoporous titanium dioxide ($TiO_2$) is very attractive material for various applications due to the high surface to volume ratio. In this study, we have fabricated nanoporous $TiO_2$ thin films on Si by anodic oxidation. 500-nm-thick titanium (Ti) films were deposited on Si by using electron beam evaporation. Nanoporous structures in the Ti films were obtained by anodic oxidization using ethylene glycol electrolytes containing 0.3 wt% $NH_4F$ and 2 vol% $H_2O$ under an applied bias of 5 V. The diameter of nanopores in the Ti films linearly increased with anodization time and the whole Ti layer could become nanoporous after anodizing for 3 hours, resulting in vertically aligned nanotubes with the length of 200~300 nm and the diameter of 50~80 nm. Upon annealing at $600^{\circ}C$ in air, the anodized Ti films were fully crystallized to $TiO_2$ of rutile and anatase phases. We believe that our method to fabricate nanoporous $TiO_2$ films on Si is promising for applications to thin-film gas sensors and thin-film photovoltaics.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1488-1490
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• 1997

$(Pb_{1-x}La_x)Ti_{1-x/4}O_3$ (x=0, 0.02, 0.04, 0.06, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb,La)$TiO_3$ with excess Pb 10mol% was made and spin-coated on the Pt/Ti/$SiO_2$/Si substrate at 4000rpm for 30 seconds. Coated specimens were dried on the hot-plate at $350^{\circ}C$ for 10 min and sintered at $500{\sim}750^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6 at.%) thin films sintered at $650^{\circ}C$ were 884, $13.95{\mu}C/cm^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were $3.2{\times}10^{-8}\;C/cm^2K$, $1.02{\times}10^{-8}\;C{\cdot}cm/J$, $2.9{\times}10^{-11}\;C{\cdot}cm/J$, $0.29{\times}10^{-8}\;C{\cdot}cm/J$, respectively.

• Journal of Ceramic Processing Research
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• v.19 no.6
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• pp.483-491
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• 2018

Effects of additives on phase development and physico-mechanical properties of mullite-carbon was investigated. Powdered clay, kaolinite and graphite of predetermined compositions were blended with additives using ball mill for 3 hrs at 60 rev/min. Samples were produced by uniaxial compression and sintered between $1400^{\circ}C$ and $1600^{\circ}C$ for one hr. They were characterized for various properties, developed phases and microstructural features. It was observed that the properties and phase developments in the samples were influenced by the additives. 10 wt % SiC served as nucleating point for SiC around $1400^{\circ}C$. 10wt % $TiO_2$ lead to development of 2.5 wt % TiC at $1500^{\circ}C$ which increased to 6.8 wt % at $1600^{\circ}C$. Ifon clay in the sample leads to development of anorthite and microcline in the samples. 10wt % $TiO_2$ is effective as anti-oxidant for graphite up to $1500^{\circ}C$. Base on strength and absorbed energy, sample C (with 10wt % $TiO_2$) sintered at $1500^{\circ}C$ is considered to be optimum.