• 한국재료학회지
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• 제23권10호
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• pp.550-554
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• 2013

As continued scaling becomes increasingly difficult, 3D integration has emerged as a viable solution to achieve higher bandwidths and good power efficiency. 3D integration can be defined as a technology involving the stacking of multiple processed wafers containing integrated circuits on top of each other with vertical interconnects between the wafers. This type of 3D structure can improve performance levels, enable the integration of devices with incompatible process flows, and reduce form factors. Through silicon vias (TSVs), which directly connect stacked structures die-to-die, are an enabling technology for future 3D integrated systems. TSVs filled with copper using an electro-plating method are investigated in this study. DC and pulses are used as a current source for the electro-plating process as a means of via filling. A TiN barrier and Ru seed layers are deposited by plasma-enhanced atomic layer deposition (PEALD) with thicknesses of 10 and 30 nm, respectively. All samples electroplated by the DC current showed defects, even with additives. However, the samples electroplated by the pulse current showed defect-free super-filled via structures. The optimized condition for defect-free bottom-up super-filling was established by adjusting the additive concentrations in the basic plating solution of copper sulfate. The optimized concentrations of JGB and SPS were found to be 10 and 20 ppm, respectively.

• Journal of Periodontal and Implant Science
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• 제50권6호
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• pp.392-405
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• 2020

Purpose: Titanium implants are widely used in the treatment of dentition defects; however, due to problems such as osseointegration failure, peri-implant bone resorption, and periimplant inflammation, their application is subject to certain restrictions. The surface modification of titanium implants can improve the implant success rate and meet the needs of clinical applications. The goal of this study was to evaluate the effect of the use of porous titanium with a chitosan/hydroxyapatite coating on osseointegration. Methods: Titanium implants with a dense core and a porous outer structure were prepared using a computer-aided design model and selective laser sintering technology, with a fabricated chitosan/hydroxyapatite composite coating on their surfaces. In vivo and in vitro experiments were used to assess osteogenesis. Results: The quasi-elastic gradient and compressive strength of porous titanium implants were observed to decrease as the porosity increased. The in vitro experiments demonstrated that, the porous titanium implants had no biological toxicity; additionally, the porous structure was shown to be superior to dense titanium with regard to facilitating the adhesion and proliferation of osteoblast-like MC3T3-E1 cells. The in vivo experimental results also showed that the porous structure was beneficial, as bone tissue could grow into the pores, thereby exhibiting good osseointegration. Conclusions: Porous titanium with a chitosan/hydroxyapatite coating promoted MC3T3-E1 cell proliferation and differentiation, and also improved osseointegration in vitro. This study has meaningful implications for research into ways of improving the surface structures of implants and promoting implant osseointegration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.177-180
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• 2002

Thickness dependence of crystallographic orientation of diol based sol-gel derived PZT(52/48) films on dielectric and piezoelectric properties was investigated The thickness of each layer by one time spinning was about 0.2 $\mu\textrm{m}$, and crack-free films was successfully deposited on 4 inches Pt/Ti/SiO$_2$/Si substrates by 0.5 mol solutions in the range from 0.2 $\mu\textrm{m}$ to 3.8 $\mu\textrm{m}$. Excellent P-E hysteresis curves were achieved without pores or any defects between interlayers. As the thickness increased , the (111) preferred orientation disappeared from 1$\mu\textrm{m}$ to 3 $\mu\textrm{m}$ region, and the orientation of films became random above 3 $\mu\textrm{m}$. Dielectric constants and longitudinal piezoelectric coefficient d$\_$33/, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of 0.8 7m. A micromachined piezoelectric cantilever have been fabricated using 0.8 $\mu\textrm{m}$ thickness PZT (52/48) films. PZT films were prepared on Si/SiN$\_$x/SiO$_2$/Ta/Pt substrate and fabricated unimorph cantilever consist of a 0.8 fm thick PZT layer on a SiNx elastic supporting layer, which becomes vibration when ac voltage is applied to the piezoelectric layer. The dielectric constant (at 100 kHz) and remanent polarization of PZT films were 1050 and 25 ${\mu}$C/$\textrm{cm}^2$, respectively. Electromechanical characteristics of the micromachined PZT cantilever in air with 200-600 $\mu\textrm{m}$ lengths are discussed in this presentation.

• International Journal of Internet, Broadcasting and Communication
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• 제7권1호
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• pp.75-92
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• 2015

This paper presents the application of the bond valence method to estimate the valence charge distribution in several perovskite systems: $La_{{\tilde{1}}x}Pb_xMnO_3$ (x=0.1-0.5), $La_{0.6}Sr_{0.{\tilde{4}}x}Ti_xMnO_3$ (x=0.0-0.25) and $La_{{\tilde{1}}x}Sr_xCoO_3$ (x=0.1-0.5); the reviewing of their crystal structures is also incorporated. The results showed the failure of the elastic bonding mechanism in all studied systems and revealed the general deficit of the valence charge in their unit cells. This valence deficit was not associated with the structural defects and was not equally localized in all coordination spheres. As the content of substitution increased, the charge deficit declined systematically from balanced level, signifying the transfer of valence charge from the ${\tilde{B}}O_6$ to ${\tilde{A}}O_{12}$ spheres. This transfer depended on the valence deviation of spheres and the average reached near 2 electron per unit cell. The possible impact of the limitted accuracy of the available structural data on the bond valence results has also been considered.

• 대한금속재료학회지
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• 제49권5호
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• pp.388-394
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• 2011

High speed copper filling into TSV (through-silicon-via) for three dimensional stacking of Si chips was investigated. For this study, a tapered via was prepared on a Si wafer by the DRIE (deep reactive ion etching) process. The via had a diameter of 37${\mu}m$ at the via opening, and 32${\mu}m$ at the via bottom, respectively and a depth of 70${\mu}m$. $SiO_2$, Ti, and Au layers were coated as functional layers on the via wall. In order to increase the filling ratio of Cu into the via, a PPR (periodic pulse reverse) wave current was applied to the Si chip during electroplating, and a PR (pulse reverse) wave current was applied for comparison. After Cu filling, the cross sections of the vias was observed by FE-SEM (field emission scanning electron microscopy). The experimental results show that the tapered via was filled to 100% at -5.85 mA/$cm^2$ for 60 min of plating by PPR wave current. The filling ratio into the tapered via by the PPR current was 2.5 times higher than that of a straight via by PR current. The tapered via by the PPR electroplating process was confirmed to be effective to fill the TSV in a short time.

• 대한의용생체공학회:의공학회지
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• 제16권2호
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• pp.231-238
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• 1995

Tc-99m-MIBI 심근 SPECT에서 심근조직에 비하여 간섭취가 상대적으로 높고 이들이 서로 가까이에 위치해 있는 경우 단축단면상의 하위부 또는 하위중격부에서 발생하는 인위적 관류결손의 정도와 여과기의 차단주파수의 관계를 분석하였다. 이러한 영향은 단축단면상 뿐만 아니라 심근 극성지도에서도 관찰되는데, 심근단층상에서 계수분포가 균일하지 못하고 간과 같이 특정부위에 방사능의 집적도가 높은 경우 단층상 재구성시 차단 파수의 적절한 설정에 따라 이 효과를 줄일 수 있는 방법을 제안하였다. 본 연구에서 분석에 사용된 여과기는 저역통과여과기로 이를 사용하는 경우에는 차단주파수를 0.4Nyquist 이상으로 하면 인위적 관류결손의 정도를 충분히 줄일 수 있었다. 그러나 높은 차단주파수에서는 심근영상의 균일도가 떨어지고 배후방사능 및 기타 잡음요인이 효과적으로 제거되지 않기 때문에 적절한 차단주파수의 설정이 중요하며, 본 연구에 사용된 영상에서 여과방법에 따른 원주프로필의 변화가 미세하여 후처리방법을 사용하여 분석하였다. 또한 역투사방법이 비선형적이므로 특정 영상보다는 다양한 간-심근 방사능비에 따른 영상을 분석하여 비선형성을 배제한 연구가 향후 진행되어야 한다.

• Journal of Periodontal and Implant Science
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• 제33권3호
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• pp.359-372
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• 2003

Among objectives of periodontal therapy. the principal one is the morphological and functional reconstruction of lost periodontal supporting tissues. This includes de novo formation of connective tissue attachment and the regrowth of alveolar bone. The use of enamel matrix derivative(EMD) may be a suitable means of regeneration new periodontal attachment in the infrabony defects. Implant used to replace lost tooth but, implantitis occurred after installation. The purpose of this study was to investigate the effects of EMD on differentiation and growth of osteoblast in titanium disc. Twentyfive millimeter diameter and 1mm thick Ti disc which was coated 25, 50, 100, 200${\mu}g$/ml of EMD(Emdogain(R)) used as experimental group, 25, 50, 100, 200ng/d of rhBMP-2 as positive control group, and no coat as negative control group. A human osteosarcoma cell line Saos-2 was cultured in Ti disc and cell proliferation and Alkaline phosphatase (ALP) activity were measured at 1 and 6 days. PCR was performed at 2 and 8 hours. Semi-quantitative RT-PCR for mRNA expressions of various osteoblastic differentiation markers -type I collagen, ALP, osteopontin, and bone sialoprotein - were performed at appropriate concentrations based upon the results of MTT and ALP assay. Cultured cell-disc complexes were prepared for scanning electron microscopy (SEM) at 2 hour. Data were analyzed using Mann-Whitney and repeated- measures 1-way analysis of variance(SPSS software version 10,SPSS. Chicago. IL). After culture, there was more osteoblast in EMD100${\mu}g$/ml than in EMD50, 200${\mu}g$/ml on day 6. There was significant difference in experimental and positive control group compared control group, as times go by(1 and 6 days). Alkaline phosphatase activity was different significantly in EMD100, 200${\mu}g$/ml and BMP100, 200${\mu}g$/ml on day 6. The results of reverse transcriptase-polymerase chain reaction (RT-PCR) showed that expression of mRNA for ALPase, collagen type I, osteopontin. hone sialoprotein and BMP-2 was detected at 2 hour and 8 hour in EMI 200${\mu}g$/ml subgroup and BMP100ng/ml subgroup. The results of this study suggest that application of enamel matrix derivative on osteoblast attached to titanium surface facilitate the expression of bone specific protein and the differentiation and growth of osteoblast.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권3호
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• pp.102-110
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• 2005

Piezoelectric transformers(PT) are expected to be small, thin and highly efficient, and which are attractive as a transformer with high power density for step down voltage. For these reasons, we have attempted to develop a step-down PT for the miniaturized adaptor. We propose a PT, operating in thickness extensional vibration mode for step-down voltage. This PT consists of a multi-layered construction in the thickness direction. In order to develop the step-down PT of 10 W class and turn ratio of 0.1 with high efficiency and miniaturization, the piezoelectric ceramics and PT designs are estimated with a variety of characteristics. The basic composition of piezoelectric ceramics consists of ternary yPb(Zr$_{x}$Ti$_{1-x}$)O$_{3}$-(1-y)Pb(Mn$_{1/3}$Nb1$_{1/3}$Sb$_{1/3}$)O$_{3}$. In the piezoelectric characteristics evaluations, at y=0.95 and x=0.505, the electromechanical coupling factor(K$_{p}$) is 58$\%$, piezoelectric strain constant(d$_{33}$) is 270 pC/N, mechanical quality factor(Qr$_{m}$) is 1520, permittivity($\varepsilon$/ 0) is 1500, and Curie temperature is 350 $^{\circ}C$. At y = 0.90 and x = 0.500, kp is 56$\%$, d33 is 250 pC/N, Q$_{m}$ is 1820, $\varepsilon$$_{33}$$^{T}$/$\varepsilon$$_{0}$ is 1120, and Curie temperature is 290 $^{\circ}C$. It shows the excellent properties at morphotropic phase boundary regions. PZT-PMNS ceramic may be available for high power piezoelectric devices such as PTs. The design of step-down PTs for adaptor proposes a multi-layer structure to overcome some structural defects of conventional PTs. In order to design PTs and analyze their performances, the finite element analysis and equivalent circuit analysis method are applied. The maximum peak of gain G as a first mode for thickness extensional vibration occurs near 0.85 MHz at load resistance of 10 .The peak of second mode at 1.7 MHz is 0.12 and the efficiency is 92$\%$.

• 한국세라믹학회지
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• 제49권5호
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• pp.475-483
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• 2012

High capacitance X5R MLCCs based on $BaTiO_3$ ceramic dielectric layers exhibit a single broad, asymmetric arc shape impedance and modulus response over the wide frequency range between 1 MHz to 0.01 Hz. Analysis according to the conventional brick-layer model for polycrystalline conductors employing a series connection of multiple RC parallel circuits leads to parameters associated with large errors and of little physical significance. A new parametric impedance model is shown to satisfactorily describe the experimental spectra, which is a parallel network of one resistor R representing the DC conductivity thermally activated by 1.32 eV, one ideal capacitor C exactly representing bulk capacitance, and a constant phase element (CPE) Q with complex capacitance $A(i{\omega})^{{\alpha}-1}$ with ${\alpha}$ close to 2/3 and A thermally activated by 0.45 eV or ca. 1/3 of activation energy of DC conductivity. The feature strongly indicate the CK1 model by J. R. Macdonald, where the CPE with 2/3 power-law exponent represents the polarization effects originating from mobile charge carriers. The CPE term is suggested to be directly related to the trapping of the electronic charge carriers and indirectly related to the ionic defects responsible for the insulation resistance degradation.

• 한국세라믹학회지
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• 제38권10호
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• pp.942-947
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• 2001

MEMS 소자에의 응용을 위한 PZT(52/48) 박막을 diol을 용매로한 솔젤법에 의해 제조하였으며 미세구조에 따른 전기적 특성 및 압전 특성 관계를 고찰하였다. 0.5 mol 의 sol을 제작하여 1회 코팅시 $0.2{\mu}m$ 두께를 갖는 균열 없는 박막을 얻을 수 있었으며 $0.2{\mu}m$에서 $3.8{\mu}m$의 두께의 막을 증착하였다. 미세구조사진으로부터 층간 porous한 영역이 관찰되지 않음과 제2상의 성장이 없는 치밀한 columnar입자 성장을 확인 할 수 있었으며 균열없는 치밀화된 입자의 성장으로부터 우수한 이력곡선을 얻을 수 있었다. XRD분석으로부터 우선 배향성을 알아본 결과 (111)우선 배향성이 $1{\mu}m$ 영역까지 우세하다가 $1{\mu}m$이상의 두께에서 점차 random하게 바뀌는 것을 확인할 수 있었으며, 유전 특성 및 압전특성의 경향도 이와 유사하게 $1{\mu}m$ 영역까지 증가하다가 그 이상의 두께에서는 수렴하여 각각 1400, 300 pC/N 정도의 우수한 값을 가졌다.