• 제목/요약/키워드: $SrCu_2O_2$

검색결과 464건 처리시간 0.024초

Fabrication of Bi-superconducting Thin Films by Layer-by-layer Sputtering Method

  • Jung, Jin-in;Lee, Hee-Kab;Park, Yong-Pil
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.77-80
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    • 1999
  • Bi$_2$Sr$_2$CuO$\sub$x/ thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering(IBS) method. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi-2201 is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

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Epitaxial Growth of BSCCO Thin film Fabricated by Layer-by-layer Sputtering

  • Yang, Sung-Ho;Park, Yong-Pil;Lee, Hee-Kab
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.212-217
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    • 2000
  • Bi$_2$Sr$_2$CuO$_{x}$(Bi-2201) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering(IBS) process. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of 5.0$\times$10$^{-5}$ Torr is supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi-2201 is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.n.

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Bi계 고온 초전도체의 2차 소결 후 특성 (Characteristics of the High-Tc Superconductor in the Bi System Prepared by the 2nd, Sintering Process)

  • 조한대;박용필;차인수;이경섭;이준웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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    • pp.58-63
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    • 1992
  • Effects of the second sintering process on the superconducting characteristics of the (Bi, Pb)SrCaCuO system have been studied. It was found that the optimal calcining temperature of mixed powder may be proper to 820$^{\circ}C$ and the optimal sintering temperture was determined on 845$^{\circ}C$. The 2212 phases transitioned the 2223 phasses during the sintring process and zero resistance was attained at 108 K for the samples sintered for 264 hr. The 2223 phases changed into the 2212 phases and nonsuperconducting phases by the second grinding process. And the 2223 phases did not recover easily by the second sintering process.

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이온 빔 스퍼터법에 의한 BSCCO 박막의 순차 증착 (Layer-by-layer Deposition of BSCCO Thin Films Using Ion Beam Sputtering Method)

  • 박용필;이준웅
    • 한국전기전자재료학회논문지
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    • 제11권4호
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    • pp.334-339
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    • 1998
  • $Bi_2Sr_2CuO_x$(Bi-2201) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering (IBS) method. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of $5.0\times10^{-5}$ Torr is supplied with ultraviolent light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi-2201 is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

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Epitaxial Growth of BSCCO Type Structure in Atomic Layer by Layer Deposition

  • Yang, Sung-Ho;Park, Yong-Pil;Jang, Kyung-Uk;Oh, Geum-Gon;Lee, Joon-Ung
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.97-100
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    • 2000
  • Bi$_2$Sr$_2$CuO$\sub$x/(Bi(2201)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition, 10 %-ozone/oxygen mixture gas of typical 5.0 ${\times}$ 10$\^$-5/. Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then c-axis oriented Bi(2201) is grown.

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New fabrication methods of step-edge Josephson junctions on SrTiO$_3$, MgO, LaAlO$_3$ single crystal substrates for YBa$_2$Cu$_3$O$_7$ thin films by using ion milling technique

  • Moon, Sunk-Yung;Ahn, Jong-Rok;Hwang, Yun-Seok;Lee, Soon-Gul;Choi, Hee-Seok;Kim, Jin-Tae
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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    • pp.146-150
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    • 2000
  • Two methods have been investigated to fabricate good quality step-edge Josephson junctions on STO, MgO, and LAO single crystal substrates. One is the annealing of substrates at 1050$^{\circ}$C in 1 atmospheric oxygen after Ar-ion milling. The other is the cleaning of step-edge by using Ar ion milling. The step-edge is characterized with atomic force microscope (AFM) images. And YBCO thin films are deposited by using pulsed laser. The I-V properties of step-edge junctions are characterized. The yield rate of step-edge junction is increased by new fabrication methods.

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A comparative study on the flux pinning properties of Zr-doped YBCO film with those of Sn-doped one prepared by metal-organic deposition

  • Choi, S.M.;Shin, G.M.;Joo, Y.S.;Yoo, S.I.
    • 한국초전도ㆍ저온공학회논문지
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    • 제15권4호
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    • pp.15-20
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    • 2013
  • We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

저잡음 심자도측정시스템 개발을 위한 고온초전도 SQUID 센서의 제작 (Fabrication of HTS SQUID Sensors for the Application to a High S/N Ratio Magnetocardiograph System)

  • 김인선;유권규;박용기
    • Progress in Superconductivity
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    • 제6권1호
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    • pp.19-23
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    • 2004
  • YBCO do superconducting quantum interference device (SQUID) magnetometers based on bicrystal Josephson junctions on 10 mm ${\times}$ 10 mm $SrTiO_3$ substrates have been fabricated. The pickup coil of the device was designed to have 16 parallel loops with 50-fm-wide lines. We could obtain optimised direct coupled YBCO SQUID magnetometer design with field sensitivity $B_{N}$ $\Phi$/ of $4.5 nT/\Phi_{0}$ and magnetic field noise $B_{N}$ of about $22 fT/Hz^{1}$2/ with an I/f corner frequency of 2 Hz measured inside a magnetically shielded room. Preliminary results of magnetocardiograph measurement using the HTS SQUID magnetometers show signal to noise ratio of about 110, which is comparable to the quality of a commercial MCG system based on Nb-SQUIDs.

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소결온도와 열처리시간에 따른 SCT 세라믹스의 유전특성 (Dielectric Properties of SCT Ceramics with the Sintering Temperature and the Thermal Treatment Time)

  • 강재훈;최운식
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제50권11호
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    • pp.539-543
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    • 2001
  • ln this paper, the $Sr_{l-x}Ca_xTiO_3(0\leqx\leq0.2)-based$ grain boundary layer ceramics were fabricated to measure dielectric properties with the sintering temperature and the thermal treatment time. The sintering temperature and time were $1420~15206{\circ}C$, 4hours, and the thermal treatment temperature and time of the specimen were $l150^{\circ}C$, 1, 2, 3hours, respectively. The structural and the dielectric properties were investigated by SEM, X-ray, HP4194A and K6517. The average grain size was increased with increasing the sintering temperature, but it decreased up to 15mo1% with increasing content of Ca. X-ray diffraction analysis results showed that all specimens were the cubic structure, and the main peaks were moved to right and the lattice constant were decreased with increasing content of Ca. The appropriate thermal treatment time and temperature of CuO to obtain dielectric properties of $\varepsilon_r>50000,\; tan \delta<0.05\; and \;\DeltaC<\pm10%$ were 2hrs and $l150^{\circ}C$, respectively.

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PLD법으로 제작한 YBa$_{2}$Cu$_{3}$O$_{7}$ 반막의 표면상태 변화 (Surface morphology of YBa$_{2}$Cu$_{3}$O$_{7}$ thin films prepared by the PLD method)

  • 한기열;황태종;유성초;이규원;하동한
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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    • pp.66-69
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    • 2000
  • 본 연구에서는 STO(100) 기판 위에 PLD법으로 YBCO 박막을 제작할 때, YBCO 상과 outgrowth의 형성과정과 구조 등을 관찰하였다. 증착의 각 과정별로 박막의 표면 및 단면을 AFM과 SEM으로 관찰한 결과, YBCO 상은 작은 씨앗에서부터 계속 성장해 가며, YBCO 상은 구조를 약 한층 정도 형성하는 불과 10 ${AA}$ 정도만 증착되어도 YBCO의 XRD 피크를 보인다. 반면에 생성되며, YBCO처럼 작은 씨앗에서 서서히 성장해 가는 것은 아니라고 생각된다.

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