• Journal of Powder Materials
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• v.24 no.6
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• pp.431-436
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• 2017

SiAlON-based ceramics are some of the most typical oxynitride ceramic materials, which can be used as cutting tools for heat-resistant super-alloys (HRSA). SiAlON can be fabricated by using gas-pressure reactive sintering from the raw materials, nitrides and oxides such as $Si_3N_4$, AlN, $Al_2O_3$, and $Yb_2O_3$. In this study, we fabricate $Yb_{m/3}Si_{12-(m+n)}Al_{m+n}O_nN_{16-n}$ (m=0.3, n=1.9, 2.3, 2.7) ceramics by using gas-pressure sintering at different sintering temperatures. Then, the densification behavior, phase formation, microstructure, and hardness of the sintered specimens are characterized. We obtain a fully densified specimen with ${\beta}$-SiAlON after gas-pressure sintering at $1820^{\circ}C$ for 90 min. under 10 atm $N_2$ pressure. These SiAlON ceramic materials exhibited hardness values of ~92.9 HRA. The potential of these SiAlON ceramics for cutting tool application is also discussed.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.325-326
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• 2006

Using $6wt%Y_2O_3-2wt%Al_2O_3$ as sintering additives and Si as a raw powder, the continuously porous in-situ $Si_2N_2O-Si_3N_4$ bodies were fabricated by multi-pass extrusion process and their microstructures were investigated depending on the addition of carbon (0-9wt%) in the mixture powder. The introduction of $Si_2N_2O$ fibers observed in the unidirectional continuous pores as well as in the pore-frame regions of the nitrided bodies can be an effective method in increasing the filtration efficiency. In the case of no carbon addition, the network type $Si_2N_2O$ fibers with high aspect ratio appeared in the continuous pores with diameters of 150-200 nm. However, in the case of 9wt% C addition, the fibers were found without any network type and had diameters of 200-250 nm.

• Journal of the Korean Ceramic Society
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• v.29 no.5
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• pp.410-418
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• 1992

Si3N4, AlN and Y2O3 powder mixtures of the Y0.1(Si, Al)12(N, O)16 composition were hot-pressed at 1900℃ for 0 to 60 min under 30 MPa in order to fabricate the partially-stabilized α-Sialon ceramics (X=0.1). Room and high temperature flexural strengths of the specimens were compared with those of Si3N4-5 wt%Y2O3, Si3N4-5 wt%Y2O3-2 wt%Al2O3, and β-Sialon (Z=0.5) ceramics. The flexural strength of the α-Sialon ceramics which was hot-pressed for 15 min showed the highest value of 820 MPa at 1400℃ that is relatively higher temperature. It is guessed that a little amount of glassy phase existed in grain boundary because Y2O3 and AlN components were incoperated in Si3N4 grains, or transient liquid phase sintering, and microstructure with the smaller grain size and the interlocked grains of α'-and β-Si3N4 was obtained by the hot-pressing at high temperature of 1900℃ for the short time (15 min).

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1037-1041
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• 2001

Silicon diosixde thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) method, at a low temperature (32$0^{\circ}C$) and from (SiH$_4$+$N_2$O) gas mixtures. The effects of deposition parameters on properties of SiO$_2$thick films were investigated by variation of $N_2$O/SiH$_4$flow ratio and RF power. As the $N_2$O/SiH$_4$flow ratio decreased, deposition rate increased from 2.9${\mu}{\textrm}{m}$/h to maximum 10.1${\mu}{\textrm}{m}$/h. As the RF power increased from 60 W to 120 W, deposition rate increased (5.2~6.7 ${\mu}{\textrm}{m}$/h) and refractive index approached at thermally grown silicon dioxide (n=1.46).

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.3-12
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• 1983

In the present study an attempt was made to synthesize the $Al_2O_3$.$2SiO_2$ glass in which atomic ratio is Al:Si=1:1 by sol-gel process. And at such a low temperature as 55$0^{\circ}C$ clear amorphous gel derived glass with Si-O-Al bonding was obtained. $Si(OC_2H_5)_4$ and $Al(NO_3)_3$.$9H_2O$ were used as the precursor and among the mutual solvents only n-butanol gave good results for the synthesis of the gel derived glass. Partial hydrolysis of TEOS with one-fold mol of $H_2O$ prior to the reaction with aluminum nitrate gave the better results., Total oxide content to the total reactants by weight was affective to the results.

• Journal of the Korean Ceramic Society
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• v.32 no.1
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• pp.63-70
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• 1995

A crack-free ceramic composite membrane with micropores has been synthesized by the pressurized sol-gel coating technique using the mixed Al2O3-SiO2 sols. The mixed sols were prepared by mixing nanoparticulate SiO2 and boehmite sols. These sols were more stable at lower pH, but very unstable when their copositions were in the range of 50~75mol% of SiO2 at the same pH. The mixed Al2O3-SiO2 membrane prepared from the mixed sol (0.2mol/$\ell$ of solid content and pH=2) containing 40mol% of SiO2 had the mean pore radius of 0.80nm and the specific surface area of 280$m^2$/g. The nitrogen permeability through the coated Al2O3-SiO2 layer was 42$\times$107mol/$m^2$.s.Pa. It was found that the thermal stability of aluminosilicate membranes, even through similar to that of SiO2 membranes, was much improved in comparison with ${\gamma}$-alumina membranes.

• Journal of Powder Materials
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• v.25 no.5
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• pp.426-434
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• 2018

In this study, $MgO-CaO-Al_2O_3-SiO_2$ (MCAS) nanocomposite glass powder having a mean particle size of 50 nm and a specific surface area of $40m^2/g$ is used as a sintering additive for AlN ceramics. Densification behaviors and thermal properties of AlN with 5 wt% MCAS nano-glass additive are investigated. Dilatometric analysis and isothermal sintering of AlN-5wt% MCAS compact demonstrates that the shrinkage of the AlN specimen increases significantly above $1,300^{\circ}C$ via liquid phase sintering of MCAS additive, and complete densification could be achieved after sintering at $1,600^{\circ}C$, which is a reduction in sintering temperature by $200^{\circ}C$ compared to conventional $AlN-Y_2O_3$ systems. The MCAS glass phase is satisfactorily distributed between AlN particles after sintering at $1,600^{\circ}C$, existing as an amorphous secondary phase. The AlN specimen attained a thermal conductivity of $82.6W/m{\cdot}K$ at $1,600^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.409-415
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• 1989

Si3N4-TiN electro-conductive ceramic composites with 7wt% Al2O3＋3wt% Y2O3 or 5wt% MgO as sintering aids were fabricated by pressureless sintering at 1,80$0^{\circ}C$ for 1h. The 3pt. flexural strength, KIC and Vickers hardness were measrued in order to investigate the effects of TiN on the mechanical properties. Also oxidation behavior was observed by measuring the weight gain after exposure to air at 1,10$0^{\circ}C$ for 100h. the reaction products between Si3N4 and TiN was not detected by XRD and EDS. Mechanical properties of the composites were not influenced by the addition of TiN less than 30vol%, but oxidation resistance of the composites was rapidly decreased with the amount of added TiN.

• Journal of Ceramic Processing Research
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• v.22 no.1
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• pp.54-60
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• 2021

Cracking in ceramics poses a serious threat to the safety of components. In the study of crack healing, SiO2 was the healingmaterial. In this study, TiO2 was added to improve the strength of ceramics, and SiO2 was added or coated to heal cracking. These show effectiveness by heat treatment. The bending strength increased by adding TiO2 and SiO2, and the frictioncoefficient and wear loss were smaller than that of the non-addition.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.390-394
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• 1989

The stored elastic strain energy due to the thermal expansion mismatch between the thermally oxidized crystalline layer (cristobalite) and CVD Si3N4($\alpha$-Si3N4) on cooling form high oxidation temperature (1000-140$0^{\circ}C$) to room temperature, releases through the crazing of film and lifting at the SiO2/Si3N4 interface. The ratial equation (1/n) which corresponds to the ratio of the relaxation of the stored elastic stain energy due to crazing of film to the total energy, is derived under the assumption of the square crazed pattern, as follow. 1/n={8${\gamma}$(1-v)2}/(ΔL2dE) The ratial equation suggests the reason for the lifting at the SiO2/Si3N4 interface which was observed in this research.