Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Interpretation of the Crazing and Lifting of the SiO2 Film Formed on Si3N4

질화규소산화막의 균열 및 박리해석

  • 최두진 (한국과학기술원 무기재료연구실)
  • Published : 1989.03.01
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Abstract

The stored elastic strain energy due to the thermal expansion mismatch between the thermally oxidized crystalline layer (cristobalite) and CVD Si3N4($\alpha$-Si3N4) on cooling form high oxidation temperature (1000-140$0^{\circ}C$) to room temperature, releases through the crazing of film and lifting at the SiO2/Si3N4 interface. The ratial equation (1/n) which corresponds to the ratio of the relaxation of the stored elastic stain energy due to crazing of film to the total energy, is derived under the assumption of the square crazed pattern, as follow. 1/n={8${\gamma}$(1-v)2}/(ΔL2dE) The ratial equation suggests the reason for the lifting at the SiO2/Si3N4 interface which was observed in this research.

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References

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