• 전자공학회논문지
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• 제50권5호
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• pp.61-66
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• 2013

본 논문에서는 절연물체로 $Si_3N_4$를 사용한 MIM 커패시터의 정합특성의 온도에 대한 의존성에 대해 분석하였다. 온도가 올라감에 따라 정합특성이 열화 되는 현상이 나타났다. 즉, $25^{\circ}C$, $75^{\circ}C$ 그리고 $125^{\circ}C$에서 $Si_3N_4$ MIM 커패시터의 정합특성 계수는 각각 0.5870, 0.6151, $0.7861%{\mu}m$으로 측정 되었다. 이러한 현상은 온도가 증가함에 따라 커패시터 내부의 캐리어들의 이동도가 감소하고 전하의 농도가 많아지기 때문이라고 할 수 있다. 따라서 고온에서의 $Si_3N_4$ MIM 커패시터의 정합특성의 분석은 아날로그 집적회로나 SoC (System on Chip)에 아주 중요하고 필수적인 연구라고 할 수 있다.

• 대한전자공학회논문지SD
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• 제44권4호
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• pp.80-85
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• 2007

Passivation 기술은 소자를 외부 환경의 영향으로부터 보호할 수 있고, 소자 성능의 감소를 예방할 수 있기 때문에 능동 소자 제작에 있어서 매우 중요하다. 본 논문에서 passivation 물질로 낮은 유전 상수를 갖는 benzocyclobutene (BCB)과 전통적인 passivation 물질인 Si3N4를 이용하여 GaAs를 기반으로 하는 $0.1{\mu}m\;{\Gamma}$-gate InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs)를 제작하였다. 제작된 MHEMT의 특성은 passivation 전과 후로 구분하여 비교하였다. Passivation후 BCB와 Si3N4를 이용한 경우 모두에서 passivation 이전에 비해 저하된 DC 및 RF 특성을 나타내었으나, BCB를 이용하여 passivation을 한 소자들이 전통적인 passivation 물질인 Si3N4를 이용한 소자들에 비해서 상대적으로 낮은 특성 저하를 DC와 RF에서 함께 나타내었다.

• 대한기계학회논문집A
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• 제26권3호
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• pp.428-435
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• 2002

Pyroelectric $Pb(Zr_{0.3}Ti_{0.7})O_3$ (PZT30/70) thin film IR detectors has been fabricated and characterised. The PZT30/70 thin film was deposited onto $Pt/Ti/Si_3N_4/SiO_2/Si$ substrate by the sol-gel process. Four different substrate conditions were studied for their effects on the pyroelectric responses of the IR detectors. The substrate conditions were the combinations of the Si etching and the Pt/Ti patterning. In the Si etched substrate, the $Si_3N_4/SiO_2$ composite layer was used as silicon etch-stop, and was used as the membrane to support the PZT pyroelectric film element as well. The measured pyroelectric current and voltage responses of detectors fabricated on the micro-machined thin $Si_3N_4/SiO_2$ membrane were two orders higher than those of the detectors on the bulk-silicon. For detectors on the membrane substrate, the Pt/Ti patterned detectors showed a 2-times higher pyroelectric response than that of not-patterned detectors. On the other hand, the pyroelectric response of the detectors on the not-etched Si substrate was almost the same, regardless of the Pt/Ti patterning. It was also found that the rise time strongly depended on the substrate thickness: the thicker the substrate was, the longer the rise-time.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.312-312
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• 2011

In SiH4/H2 discharge for growth process of hydrogenated amorphous silicon (a-Si:H), silane polymers, produced by SiH2 + Sin-1H2n ${\rightarrow}$ SinH2n+2, have no reactivity on the film-growing surface. However, under the SiH2 rich condition, high silane reactive species (HSRS) can be produced by electron collision to silane polymers. HSRS, having relatively strong reactivity on the surface, can react with dangling bond and form Si-H2 networks which have a close correlation with photo-induced degradation of a-Si:H thin film solar cell [1]. To find contributions of suggested several external plasma conditions (pressure, frequency and ratio of mixture gas) [2,3] to suppressing productions of HSRS, some plasma characteristics are studied by numerical methods. For this study, a zero-dimensional global model for SiH4/H2 discharge and a one-dimensional particle-in-cell Monte-Carlo-collision model (PIC-MCC) for pure SiH4 discharge have been developed. Densities of important reactive species of SiH4/H2 discharge are observed by means of the global model, dealing 30 species and 136 reactions, and electron energy probability functions (EEPFs) of pure SiH4 discharge are obtained from the PIC-MCC model, containing 5 charged species and 15 reactions. Using global model, SiH2/SiH3 values were calculated when pressure and driving frequency vary from 0.1 Torr to 10 Torr, from 13.56 MHz to 60 MHz respectively and when the portion of hydrogen changes. Due to the limitation of global model, frequency effects can be explained by PIC-MCC model. Through PIC-MCC model for pure SiH4, EEPFs are obtained in the specific range responsible for forming SiH2 and SiH3: from 8.75 eV to 9.47 eV [4]. Through densities of reactive species and EEPFs, polymerization reactions and production of HSRS are discussed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1694-1696
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• 2004

$Si_3N_4$ 박막을 동일한 공정 파라메터로 저압 화학기상증착법(LPCVD)으로 증착하고, IS, LOCOS- IS 및 ISFET의 세 가지 각각 다른 구조로 하여 용약 중 pH 농도 감지용 센서소자를 제작하였다. 이 세 가지 다른 센서소자에 대하여 pH 농도변화에 따른 감지도, 감지특성곡선의 선형성, 히스테리시스 등 주요 특성을 각각 조사한 후 비교 분석하였다. LOCOS-IS 구조의 pH 센서는 ISFET 구조의 pH 센서와 유사한 우수한 제반 pH 감지특성을 보였으나, 간단한 IS 구조의 pH 센서는 이들에 비해 상대적으로 열악한 pH 감지특성을 보였다. 동일공정으로 제작된 Si3N4 박막으로 제작되었음에도 불구하고 간단한 IS 구조의 pH 센서의 비교적 열악한 특성을 보이는 원인을 규명하기 위하여, pH 농도 변화에 따른 C-V특성 변화에 의한 pH 감지특성 조사시의 IS 및 LOCOS-IS 구조의 정전용량의 변화를 비교하고 고찰하였다.

• 한국정밀공학회지
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• 제26권5호
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• pp.48-56
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• 2009

In this paper, laser-assisted machining(LAM) has been employed to machine hot isostatically pressed (HIPed) Si3N4 work pieces. Due to little residual flaws and porosity, HIPed $Si_3N_4$ work pieces are more difficult to machine compared to normally sintered $Si_3N_4$ workpieces. In LAM, the intense energy of laser was used to enhance machinability by locally heating the workpiece and thus reducing yield strength. In experiments, the laser power ranges from 200W to 800W and the diameter of work pieces is 16mm. While machining, the surface temperature was kept nearly constant by laser heating except for a short period of rise time of max. 58 seconds. Results showed as feed rate increases the surface temperature of $Si_3N_4$ workpieces decreases slightly, whereas the effect of depth of cut is disregardable. With a laser power of 800W, achievable maximal depth of cut as 0.7mm and feed rate was 0.03mm/rev.

• 한국세라믹학회지
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• 제42권8호
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• pp.537-541
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• 2005

Silicon nitride is one of the most successful engineering ceramics, owing to a favorable combination of properties, including high strength, high hardness, low thermal expansion coefficient, and high fracture toughness. However, the impact damage behavior of $Si_3N_4$ ceramics has not been widely characterized. In this study, sphere and explosive indentations were used to characterize the static and dynamic damage behavior of $Si_3N_4$ ceramics with different microstructures. Three grades of $Si_3N_4$ with different grain size and shape, fine-equiaxed, medium, and coarse-elongated, were prepared. In order to observe the subsurface damaged zone, a bonded-interface technique was adopted. Subsurface damage evolution of the specimens was then characterized extensively using optical and electron microscopy. It was found that the damage response depends strongly on the microstructure of the ceramics, particularly on the glassy grain boundary phase. In the case of static indentation, examination of subsurface damage revealed competition between brittle and ductile damage modes. In contrast to static indentation results, dynamic indentation induces a massive subsurface yield zone that contains severe micro-failures. In this study, it is suggested that the weak glassy grain boundary phase plays an important role in the resistance to dynamic fracture.

• 한국공작기계학회논문집
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• 제13권2호
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• pp.33-39
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• 2004

Sandblasting has recently been developed into a powder blasting technique for brittle materials. In this study, the machinability of $Si_3N_4$-hBN based machinable ceramics are evaluated for micro - pattern making processes using powder blasting. Material properties of the developed machinable ceramics according to the variation of h-BN contents give a good machinability to the ceramics. The effect of scanning times, the size of patterns and variation of BN contents on the erosion depth of samples without mask and samples with different mask patterns in powder blasting of $Si_3N_4$-hBN ceramics are investigated. The Parameters are the impact angle of $90^{\circ}$, the scanning times of nozzle up to 40, and the stand-off distances of 100mm The widths of masked pattern are 0.1mm 0.5mm and 1mm. The powder used is Alumina particles, WA#600. and the blasting pressure of powder is 0.2MPa. Through required experiments, the results are investigated and analyzed. As the results, the machinability of the developed ceramics increases as the BN contents in the ceramics.

• 한국표면공학회지
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• 제43권5호
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• pp.224-229
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• 2010

$Ni-Si_3N_4$ nano-composite coatings were prepared by pulse current (PC) electrodeposition and direct current (DC) electrodeposition techniques. The micro-structure of the coatings was characterized by scanning electron microscopy (SEM), vickers microhardness, X-Ray Diffraction (XRD) and wear-friction tests. The results showed that the micro-structure and wear performance of the coatings were affected by the electrodeposition techniques. Pulse current electrodeposited $Ni-Si_3N_4$ composite coatings exhibited higher microhardness, smooth surface, and better wear resistance properties as compared to coatings prepared under DC condition. The $Ni-Si_3N_4$ composite coatings prepared at 50 Hz pulse frequency with 10% duty cycles has shown higher codeposition of nano-particles. Consequently, increased microhardness and less plastic deformations occurred in coatings during sliding wear test. The XRD patterns revealed that the increased pulse frequencies changed the preferred (100) nickel crystallite orientations into mixed (111) and (100) orientations.

• 한국정밀공학회지
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• 제25권7호
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• pp.47-54
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• 2008

Recently, application of ceramics has increased gradually due to excellent mechanical properties. Si3n4-BN ceramic which is one of ceramics is very hard and has superior resistance against volatile temperature and wear. However, extremely high hardness of the $Si_3N_4-BN$ ceramic makes conventional machining very difficult. Therefore, the use of machinable ceramic has been in a poor because of difficult industrial processes in spite of many advantages. And so new technology being called IED(In-process electrolytic dressing) was introduced to solve this problem. The aim of this study is to determine the machining characteristics in terms of pressurized weight to the workpiece and the influence with h-BN content using IED lapping system. Also, Acoustic Emission (AE) is used for the monitoring of surface characteristics.