Comparative Study of surface passivation for Metamorphic HEMT using low-k Benzocyclobutene(BCB)

Metamorphic HEMT에서 low-k Benzocyclobutene(BCB)를 이용한 표면 passivation 비교 연구

  • Baek, Yong-Hyun (Millimeter-wave INnovation Technology research center, MINT) ;
  • Oh, Jung-Hun (Millimeter-wave INnovation Technology research center, MINT) ;
  • Han, Min (Millimeter-wave INnovation Technology research center, MINT) ;
  • Choi, Seok-Gyu (Millimeter-wave INnovation Technology research center, MINT) ;
  • Lee, Bok-Hyung (Millimeter-wave INnovation Technology research center, MINT) ;
  • Lee, Seong-Dae (Millimeter-wave INnovation Technology research center, MINT) ;
  • Rhee, Jin-Koo (Millimeter-wave INnovation Technology research center, MINT)
  • 백용현 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 오정훈 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 한민 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 최석규 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 이복형 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 이성대 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 이진구 (동국대학교 밀리미터파 신기술 연구센터)
  • Published : 2007.04.25

Abstract

The passivation is one of the important technologies for protection of the devies from damage. In this paper, we fabricated $0.1{\mu}m\;{\Gamma}$--gate InAIAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) on a GaAs substrate. And then the wafer with MHEMTs was divided into two pieces; one for passivation and another for without passivation experiments. The passivations were done by using both low-k BCB and Si3N4 thin films. DC and RF performances were measured and the results are compared. The MHEMTs with BCB passivation show lower degradation than ones with Si3N4 passivation.

References

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