• Journal of the Korean Ceramic Society
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• v.54 no.4
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• pp.292-297
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• 2017

${\beta}-SiAlON$, based on its high fracture toughness, good strength and low abrasion resistance, has been adopted in several industrial fields such as bearings, turbine blades and non-ferrous metal refractories. In general, ${\beta}-SiAlON$ is fabricated by reactive sintering using expensive $Si_3N_4$ and AlN as starting materials. On the other hand, in this study, a cheaper ${\beta}-SiAlON$ starting powder synthesized by SHS was employed to improve price competitiveness compared to that of the reactive sintering process. ${\beta}-SiAlON$ ceramics with various content of the sintering additive $Y_2O_3$ up to 7 wt% were fabricated by conventional pressureless sintering at $1800^{\circ}C$ for 2 to 8 h under $N_2$ pressure of 0.1 MPa. The specimen with 3 wt% $Y_2O_3$ exhibited the best mechanical properties: hardness of 14 GPa, biaxial strength of 830 MPa, fracture toughness of $5MPa{\cdot}m^{1/2}$ and wear rate of about $3{\times}10^{-6}mm^3/N{\cdot}m$.

• Analytical Science and Technology
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• v.8 no.4
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• pp.637-642
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• 1995

The presence of a porous Si layer(PSL) formed on the surface of crystalline silicon by electrochemical etclling in HF solution is found to enhance the stability of n-Si photoanodes, but porous n-Si thus formed is still liable to corrode upon exposure to excitation light. To improve the stability of the porous n-Si electrodes and to reduce the photo-induced corrosion, we have examined the PEC behavior of porous n-Si modified with polyaniline(PANI) and 3 nm thick layer of Au. Comparisons were made between Au/PSL and PANl/Au/PSL photoelectrodes.

• Journal of the Korean Ceramic Society
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• v.32 no.9
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• pp.1003-1008
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• 1995

CVD-Si3N4/CVD-SiC/pack-SiC/pyro-carbon/(3-D C/C composite) multilayer coating was performed to improve the oxdiation resistance and erosion resistance properteis of the 3-D carbon/carbon composite, and the plasma test was performed to measure the oxidation resistance and erosion resistance properties. The thicknesses of each film layer were about 10${\mu}{\textrm}{m}$ for pack-SiC, 5${\mu}{\textrm}{m}$ for CVD-SiC and 40${\mu}{\textrm}{m}$ for CVD-Si3N4. When the multilayer coated specimen was exposed to the plasma flame with temperature of 500$0^{\circ}C$ for 20 seconds, it showed the weight loss five times less than that of the only pyro-carbon coated specimen.

• Journal of the Korean institute of surface engineering
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• v.52 no.5
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• pp.246-250
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• 2019

Nano-multilayered $Cr_{25.2}Al_{19.5}Si_{4.7}N_{50.5}$ films were deposited on the steel substrate by cathodic arc plasma deposition. They were corroded at $900^{\circ}C$ in $Ar/1%SO_2$ gas in order to study their corrosion behavior in sulfidizing/oxidizing environments. Despite the presence of sulfur in the gaseous environment, the corrosion was governed by oxidation, leading to formation of protective oxides such as $Cr_2O_3$ and ${\alpha}-Al_2O_3$, where Si was dissolved. Iron diffused outward from the substrate to the film surface, and oxidized to $Fe_2O_3$ and $Fe_3O_4$. The films were corrosion-resistant up to 150 h owing to the formation of thin ($Cr_2O_3$ and/or ${\alpha}-Al_2O_3$)-rich oxide layers. However, they failed when corroded at $900^{\circ}C$ for 300 h, resulting in the formation of layered oxide scales due to not only outward diffusion of Cr, Al, Si, Fe and N, but also inward movement of sulfur and oxygen.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.255-255
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• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

• Proceedings of the KWS Conference
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• v.43
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• pp.109-111
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• 2004

20 vol.$\%$ SiC를 포함한 두 층간의 $Si_{3}N_{4}/SiC$ 나노 복합재료는$\alpha$ $-Si_3N_4$,13 nm 크기의 나노탄소 분말 그리고 $5\;wt$\%\;Y_2O_3$의 분말로 두 단계 소결을 통하여 제작된다. $Si_3N_4$ 입계 사이의 결합은 소결 후 변하지 않고 남은 compact와 $51\~62\%$의 기공으로 얻어진 표면적 사이의 반응에 의해 생성된다. 이 연구에서는 Ti 합금을 SiC 층에 브레이징을 이용하여 제작하고 기계적 특성을 연구하였다. 다양한 변형율과 결합물의 강도, 변형율 증가에 따른 층간 변화를 연구하였다. 층간 파괴 형태는 금속과 브레이징 합금 사이의 파괴, 세라믹과 브레이징 합금 사이의 파괴, 그리고 세라믹 내부에서의 파괴를 보였다.

• Korean Journal of Materials Research
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• v.15 no.12
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• pp.780-785
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• 2005

To investigate the microcrack healing behavior of $Si_3N_4-20wt\%SiC-8wt\%Y_2O_3$ composite ceramics(SNCY8), we observe the crack length evolution a! the time of 20, 40, 60 minutes with in-situ optical microscopy by varying healing temperature of $800\~1200^{\circ}C$. Crack healing obviously occurred as heating temperature and time increased. We proposed a simple model of effective diffusion based on the crack length evolution with healing condition, and determined the effective diffusion coefficient as Our result implies that we may predict the healing ability quantitatively with temperature and time in structural ceramics through the effective diffusion coefficient model.

• International Journal of Korean Welding Society
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• v.4 no.1
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• pp.46-52
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• 2004

To combine the mechanical advantages of ceramics with those of metals, one often uses both materials within one composite component. But, as known, they have different material properties and fracture behaviors. In this study, a four-point bending test is carried out on $Si_3N_4$ joined to ANSI 304L stainless steel with a Ti-Ag-Cu filler and a Cu interlayer at room temperature to evaluate their longitudinal strain behaviors. And, to detect localized strain, a couple of strain gages are pasted near the joint interfaces of the ceramic and metal sides. The normal strain rates are varied from $3.33{\times}10^5$ to $3.33{\times}10^{-1}s^{-1}$ Within this range, the experimental results showed that the four-point bending strength and the deflection of the interlayer increased with increasing the strain rate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1028-1032
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• 2009

In this study, the influences of silicon-based gas barrier films fabricated by using a facing target sputtering(FTS) system on the gas permeability for flexible displays have been investigated. Under these optimum conditions on the $SiO_x$ film with oxygen concentration($O_2/Ar+O_2$) of 3.3% and the $SiO_xN_y$ film with nitrogen concentration($N_2/Ar+O_2+N_2$) of 30% deposited by the FTS system, it was found that the films were grown about 4 times higher deposition rate than that of the conventional sputtering system and showed high transmittance about 85% in the visible light range. Particularly, the polyethylene naphthalate(PEN) substrates with the $SiO_x$ and/or $SiO_xN_y$ films showed the enhanced properties of decreased water vapor transmission rate (WVTR) over $10^{-1}\;g/m^2{\cdot}day$ compared with the PEN substrate without any gas barrier films, which was due to high packing density in the Si-based films with high plasma density by FTS process and/or the denser chemical structure of Si-N bond in the $SiO_xN_y$ film.

• International Journal of Precision Engineering and Manufacturing
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• v.5 no.2
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• pp.39-45
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• 2004

Atomic Force Microscope (AFM) has been widely used in micro/nano-scale studies and applications for the last few decades. In this work, wear characteristics of silicon-based AFM tip was investigated. AFM tip shape was observed using a high resolution SEM and the wear coefficient was approximately calculated based on Archard's wear equation. It was shown that the wear coefficient of Si and ${Si}_3$$N_4$ tips were in the range of ${10}^{-1}$~${10}^{-3}$and ${10}^{-3}$~${10}^{-4}$, respectively. Also, the effect of relative humidity and sliding distance on adhesion-induced tip wear was investigated. It was found that the tip wear has more severe for harder counter surface materials. Finally, the probable wear mechanism was analyzed from the adhesive and abrasive interaction point of view.