Acknowledgement
Supported by : Korea Research Foundation
Analytical Science and Technology (분석과학)
- Volume 8 Issue 4
- /
- Pages.637-642
- /
- 1995
- /
- 1225-0163(pISSN)
- /
- 2288-8985(eISSN)
Enhanced Photoelectrochemical Behavior of Gold-coated Porous n-Si Electrochemically Modified with Polyaniline
- Park, Soo-Jin (Department of Chemistry, Korea University) ;
- Chae, Won-Seok (Department of Chemistry, Korea University) ;
- Kim, Kang-Jin (Department of Chemistry, Korea University)
- Published : 1995.12.25
Abstract
The presence of a porous Si layer(PSL) formed on the surface of crystalline silicon by electrochemical etclling in HF solution is found to enhance the stability of n-Si photoanodes, but porous n-Si thus formed is still liable to corrode upon exposure to excitation light. To improve the stability of the porous n-Si electrodes and to reduce the photo-induced corrosion, we have examined the PEC behavior of porous n-Si modified with polyaniline(PANI) and 3 nm thick layer of Au. Comparisons were made between Au/PSL and PANl/Au/PSL photoelectrodes.