• Journal of Surface Science and Engineering
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• v.34 no.1
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• pp.33-38
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• 2001

10cm-diameter Si(100)∥$1.3\mu\textrm{m}$-X$1.3_2$X$1.3\mu\textrm{m}$-$SiO_2$∥Si(100) afers were prepared using a fast linear annealing (FLA) equipment. 1.3$\mu\textrm{m}$-thick $SiO_2$ films were grown by dry oxidation process. After cleaning and premating the wafers in a class 100 clean room, they were heat treated using with the FLA and conventional electric furnace. Bonded area and bond strength of wafer pairs were measured using a infrared (IR) camera and razor blade crack opening method, respectively. It was confinmed that the bonded area by FLA was around 99% and the bond strength value reached 2172mJ/$\m^2$, which is equivalent to theoritical bond strength. Our result implies that thick $SiO_2$ SOI may be prepared more easily by using $SiO_2$$SiO_2$ bonding interfaces then those of Si/$SiO_2$'s.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.170-170
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• 2013

형광체를 조명과 디스플레이 산업에 응용하기 위해서는 충분히 밝은 빛을 제공하는 형광체의 발광 세기가 중요한 변수이다. 이러한 발광 특성은 주로 모체 격자에 도핑 되는 활성제의 농도, 입자의 형상과 크기 분포의 균일성, 결정성에 따라 달라진다. 본 연구에서는 Ca2SiO4 모체 결정에 도핑한 활성제 Eu3+와 Dy3+ 이온의 농도를 변화시키면서 고상 반응법을 사용하여 높은 발광 효율을 갖는 Ca2-1.5xSiO4::Eux3+ 적색 형광체와 Ca2-1.5xSiO4:Dyx3+ 백색 형광체를 합성하였다. 특히, 활성제 Eu3+와 Dy3+ 이온 농도의 변화가 형광체의 결정 구조, 소성 온도, 입자의 표면 형상, 광학 스펙트럼의 발광 효율에 미치는 영향을 조사하여 최적의 합성 조건을 결정하였으며, 회절 신호의 반치폭과 발광 세기의 상호 관계를 조사하였다. Ca2-1.5xSiO4::Eux3+와 Ca2-1.5xSiO4:Dyx3+ 형광체 초기 분말 시료는 CaO (99.9% 순도), SiO2 (99.9%), Dy2O3 (99.9%)와 Eu2O3 (99.9%)인 화학 물질을 구입하여 초정밀 저울로 화학양론적으로 측정하였다. 이때 Eu와 Dy의 함량비는 x=0, 0.01, 0.05, 0.1, 0.15, 0.2 mol로 변화 시키면서 합성하였다. Ca2-1.5xSiO4: Dyx3+ 형광체 분말 시료의 경우에 소결 온도를 각각 $1000^{\circ}C$와 $1100^{\circ}C$로 달리하여 흡광과 발광 스펙트럼의 세기를 비교해 본 결과, 서로 다른 두 소결 온도에서 합성한 두 형광체 분말은 동일하게 Dy3+의 몰 비가 0.05 mol일 때 주 발광 스펙트럼의 세기는 최대값을 나타내었다. 파장 355 nm로 여기시킨 Dy3+ 함량비에 따른 Ca2-1.5xSiO4:Dyx3+ 형광체 분말의 발광 스펙트럼은 Dy3+ 함량비에 관계 없이 581 nm에서 가장 강한 황색 발광을 보였다. 함량비가 증가함에 따라 발광 스펙트럼의 변화가 관측되었는데, Dy3+의 몰 비가 0.01 mol~0.05 mol인 영역에서는 발광 세기가 증가하여 0.05 mol에서 최대를 나타내다가 Dy3+의 몰 비가 더욱 증가함에 따라 발광세기는 현저히 감소하는 경향을 나타내었는데, 이 현상은 농도 소광 현상으로 해석 할 수 있다. 이외에도, Eu3+와 Dy3+ 이온의 함량비와 소결 온도가 결정 입자의 크기와 흡광 스펙트럼에 미치는 결과를 조사하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.159-160
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• 2007

본 연구에서는 Si 타겟과 반응성 마그네트론 스퍼터링법을 적용하여 $SiO_xN_y$ 박막을 PET 필름상에 증착하였다. PET 필름상에 밀착력 증진 및 기판 표면 거칠기 제어를 위해 이온빔을 이용한 플라즈마 전처리를 수행하였다. 플라즈마 전처리 조건과 질소 가스 유량비에 따른 $SiO_xN_y$ 박막의 광학적 특성과 수분의 투습성에 대한 영향을 관찰하였다. 광학적 투과율은 전처리 및 조성비에 관계없이 95% 이상의 높은 광투과율을 보여주었다. 수분에 대한 투습 특성은 플라즈마 전처리 조건에 따라 다소 향상됨을 확인하였고, 질소 유량비가 증가함에 따라 투습 특성이 향상되었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.2
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• pp.60-64
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• 2011

High sensitivity IR image sensors require materials characteristics with temperature coefficient of resistance (TCR) and IR range absorption. In this study, the metal-dielectric thermo sensitive films (MDTF) based on $(SiO_2)_x-(Ti)_y$ composition were deposited on substrates of germanium and glass by thermal evaporator. The $SiO_2$ : Ti mixture was made from the ratio of 9 : 1, 8 : 2, 7 : 3, 6 : 4, respectively. $(SiO_2)_x-(Ti)_y$ mixture powder was loaded on tungsten boat in evaporator and was 15.5 cm from the substrate. Resistance of $(SiO_2)_x-(Ti)_y$ in the range of 273~333K were measured as a function of temperature. Temperature coefficient of resistance (TCR) was calculated by the resistance variation. Under the various mixture ratios condition, it is possible to obtain $SiO_2$-Ti layers with resistance from units kilo-ohm to hundreds kilo-ohm. Finally, our results showed that Temperature coefficient of resistance (TCR) of these films varies from -1.4 to $-2.6%K^{-1}$.

• 한국전자현미경학회:학술대회논문집
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• 1997.05a
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• pp.71-76
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• 1997

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.5-12
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• 1992

We have fabricated a-Si:H multilayer for contact-type linear image sensor by means of RF glow discharge decomposition method. The ITO/i-a-Si:H/Al structure has relatively high dark current due to indium diffusion and carrier injection from both electrodes, resulting in low photocurrent to dark current. To suppress the dark current and to enhance interface electric field between ITO and i-a-Si:H film we have fabricated ITO/insulator/i-a-S:H/p-a-S:H/Al multilayer film with blocking structure. The photocurrent of ITO/$SiO_{2}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al multilayer sensor with 5V bias voltage became saturated at about 20nA under $20{\mu}W/cm^{2}$ light intensity, while the dark current was less than 0.1nA. To increase the light generation efficiency we have adopted ITO/$SiO_{x}N_{y}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al structure, showing photocurrent of 30nA and dark current of 0.08nA with 5V bias voltage. Also the spectral photosensitivity of the multilayer was enhanced for short wavelength visible region of 560nm, compared with that of the a-Si:H monolayer of 630nm. And its photoresponse time was about 0.3msec with the film homogeneity of 5% deviation.

• Korean Journal of Materials Research
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• v.17 no.8
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• pp.414-419
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• 2007

We report the electrical conductivity of the mixed alkali silicate glasses in the system (60-x)$SiO_2-40Na_2O-xCaO(x=0\sim15wt%)$ in the temperature range from $150^{\circ}C$ to $620^{\circ}C$. In the range from $150^{\circ}C$ to glass transition temperature$(T_g)$, the electrical conductivities of glass samples had a tendency to be proportion with temperature. The glasses of containing over 7.5wt% CaO showed lower conductivities than the glasses of containing 0 and 5wt% CaO because two kinds of alkali ions$(Na^+,\;Ca^{2+})$ were obstructed each other. On the other hand, in the range from $T_g$ to $620^{\circ}C$, the electrical conductivity of glasses($7.5{\leq}x{\leq}12.5$) was unstable and decreased in some region. From XRD results, the $Na_4Ca(SiO_3)_3$ phase were observed in these glasses. This means the alkali ions didn't behave as carrier, it seems that this caused the conductivities decrease. In case of glass of containing 15wt% CaO, any crystal phase were not observed. This means the alkali ions behaved as carrier, it consequently seems the conductivity increased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.5
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• pp.187-190
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• 2023

In this study, antibacterial glasses were developed by the addition of CaO in ZnO-Na₂O-B₂O₃-SiO₂ glass system. The effect of the addition of CaO on the thermal properties, dissolution properties, surface zeta potential and antibacterial activity were analyzed. Differential thermal analysis (DTA) analysis was performed to analyze the thermophysical properties of 30ZnO-xCaO-20Na₂O-30B₂O₃-(20-x)SiO₂ (x = 0, 2, 4, 6, 8, 10 mol%). It was confirmed that the glass transition temperature decreased as the CaO content increased. The amount of released Zn²⁺ ions and surface zeta potential of glass samples increased with increasing CaO concentration. For these reasons, the antibacterial activity was dramatically improved. By the addition of CaO, we could successfully develop an antibacterial glass with 99.9 % antibacterial activity against both Escherichia coli and Staphylococcus aureus.

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.860-864
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• 1998

We investigated the photoluminescence and the crystalline properties with Ga doping concentrations (0-12 mol%) in $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}\textrm{SiO}_{4}$ green phosphors prepared by the solid state reaction. The photoluminescence was improved by a doping of Ga element in $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}(\textrm{Si_{1-x}\textrm{Ga}_{x})\textrm{O}_{4}$ phosphors which showed the highest emission intensity and good color purity in the doping concentration of x=0.08. The emission intensity of $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}(\textrm{Si_{1-x}\textrm{Ga}_{x})\textrm{O}_{4}$(x= 0.08) phosphors was increased to 7 times with increasing the sintering temperatures from $1100^{\circ}C$ to $1400^{\circ}C$, showing the improved crystalline quality. The decay time was not affected by Ga doping concentrations with constant values around 24ms. It was found from SEM and PSA analyses that the phosphors were composed of a large number of small grains around 1-3$10\mu\textrm{m}$ with a small amounts of agglomerated particles above $10\mu\textrm{m}$.

• Journal of Industrial Technology
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• v.20 no.A
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• pp.247-256
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• 2000

Precursor gels with the composition of $xZrO_2{\cdot}(100-x)SiO_2$ systems (x=10, 20 and 30 mol%) were prepared by the sol-gel method. Kinetic parameters, such as activation energy, Avrami's exponent, n, and dimensionality crystal growth value, m, have been simultaneously calculated from the DTA data using Kissinger and Matusita equations. The crystallite size dependence on tetragonal to monoclinic transformation of $ZrO_2$ was investigated using XRD, in relation to the fracture toughness. The crystallization of tetragonal $ZrO_2$ occurred through 3-dimensional diffusion controlled growth(n=m=2) and the activation energy for crystallization was calculated using Kissinger and Matusita equations, as about $310{\sim}325{\pm}10kJ/mol$. The growth of $t-ZrO_2$, in proportion to the cube of radius, increased with increasing heating temperature and heat-treatment time. It was suggested that the diffusion of Zr4+ions by Ostwald ripening was rate-limiting process for the growth of $t-ZrO_2$ crystallite size. The fracture toughness of $xZrO_2{\cdot}(100-x)SiO_2$ systems glass ceramics increased with increasing crystallite size of $t-ZrO_2$. The fracture toughness of $30ZrO_2{\cdot}70SiO_2$ system glass ceramics heated at $1,100^{\circ}C$ for 5 h was $4.84Mpam^{1/2}$ at a critical crystaliite size of 40 nm.