• 제목/요약/키워드: $Sb_2S_3$

검색결과 311건 처리시간 0.032초

비정질-결정질 가역적 상변환 소자용 Ge8Sb2Te11 박막의 W 도핑에 따른 상변환 특성 평가 (Evaluation on the Phase-Change Properties in W-doped Ge8Sb2Te11 Thin Films for Amorphous-to-Crystalline Reversible Phase-Change Device)

  • 박철진;여종빈;공헌;이현용
    • 한국전기전자재료학회논문지
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    • 제30권3호
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    • pp.133-138
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    • 2017
  • We evaluated the structural, electrical and optical properties of tungsten (W)-doped $Ge_8Sb_2Te_{11}$ thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve thermal stability. 200 mm thick $Ge_8Sb_2Te_{11}$ and W-doped $Ge_8Sb_2Te_{11}$ films were deposited on p-type Si (100) and glass substrates using a magnetron co-sputtering system at room temperature. The fabricated films were annealed in a furnace in the $0{\sim}400^{\circ}C$ temperature range. The structural properties were analyzed using X-ray diffraction (X'pert PRO, Phillips). The results showed increased crystallization temperature ($T_c$) leading to thermal stability in the amorphous state. The optical properties were analyzed using an UV-Vis-IR spectrophotometer (Shimadzu, U-3501, range : 300~3,000 nm). The results showed an increase in the crystalline material optical energy band gap ($E_{op}$) and an increase in the $E_{op}$ difference (${\Delta}E_{op}$). This is a good effect to reduce memory device noise. The electrical properties were analyzed using a 4-point probe (CNT-series). This showed increased sheet resistance ($R_s$), which reduces programming current in the memory device.

현삼(玄參)의 유전자 분석 및 자발성 고혈압흰쥐의 혈압에 미치는 영향 (Hypotensive Effect of Scrophularia buergeriana and Gene Analysis of Scrophularia Species)

  • 박규하;함인혜;최호영
    • 대한본초학회지
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    • 제23권2호
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    • pp.213-223
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    • 2008
  • Objectives : This study was performed to prove the hypotensive effect of 70% MeOH extracts from Scrophularia buergeriana (SB) on rat's femoral artery. Methods : We observed hypotensive effect of SB on rat's femoral artery. Scrophularia buergeriana Miquel, S. kakudensis, S. koraiensis and S. ningpoenesis Hemsl. were used by the RFLP method and sequence analysis of ITS regions, in order to compare and discriminate. Results : SB 70% MeOH Ex., Water fraction, 40% MeOH fraction, 100% MeOH fraction didn't show significantly hypotensive effect. 20% fraction of SB 70% MeOH Ex. showed significantly hypotensive effect. The size of ITS region on Scrophularia sp. is 589${\sim}$590bp and amount of G+C is 59.3% to 59.7%, and it showed the similar of ITS parts on Scrophularia sp. Conclusions : We concluded that SB Ex. have hypotensive activity, and it's more efficient when separated. And Scrophularia sp. showed the similar of DNA analysis.

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The recombination velocity at III-V compound heterojunctions with applications to Al/$_x$/Ga/$_1-x$/As-GaAs/$_1-y$/Sb/$_y$/ solar cells

  • 김정순
    • 전기의세계
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    • 제28권4호
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    • pp.53-63
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    • 1979
  • Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

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p-GaSb:Be/GaAs 에피층의 Be 준위에 관한 연구 (A Study of Be Levels in p-GaSb:Be/GaAs Epitaxial Layers)

  • 노삼규;김준오;이상준
    • 한국진공학회지
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    • 제20권2호
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    • pp.135-140
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    • 2011
  • Be을 도핑한 p형 GaSb:Be 에피층의 광여기 발광(PL) 스펙트럼(20 K)의 도핑밀도에 따른 변화를 조사하여, Be 억셉터의 근원을 분석하였다. 도핑을 증가시키면 PL 피크가 고에너지로 변위하고 반치폭은 줄어드는 경향을 보이다가, 밀도가 ${\sim}10^{17}cm^{-3}$ 이상에서 피크 에너지는 오히려 저에너지로 변위하고 반치폭이 늘어나는 현상을 관측하였다. 3개 피크로 분리한 PL 스펙트럼의 적분 PL 강도 변화를 통하여, 도핑 증가에 따라 $Be[Be_{Ga}]$ 준위(0.794 eV)는 감소하는 반면 진성결함에 기인한 $A[Ga_{Sb}]$ 피크(0.778 eV)와 함께 Be과 A 사이에 위치하는 새로운 $Be^*$ 준위(0.787 eV)가 증가하기 때문으로 분석되었다. 이것은 Be을 도핑한 p-GaSb:Be 에피층에는 Be 얕은준위(${\Delta}E=16meV$)와 Be과 A 결함준위가 결합한 $Be^*[Ga_{Sb}-Be_{Ga}]$의 복합준위(${\Delta}E=23meV$)가 공존하기 때문으로 논의하였으며, ${\sim}10^{17}cm^{-3}$ 이상 도핑할 경우에는 Be 준위가 다소 감소할 수 있음을 보였다.

$4{\times}4$ 블록의 Multiple Partition 예측을 이용한 개선된 H.264/AVC 무손실 인트라 압축 방법 (Improved H.264/AVC Intra Lossless Compression Using Multiple Partition Prediction For $4{\times}4$ Intra Block)

  • 이상헌;조남익
    • 한국방송∙미디어공학회:학술대회논문집
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    • 한국방송공학회 2010년도 추계학술대회
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    • pp.295-297
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    • 2010
  • H.264/AVC 무손실 인트라 압축을 위하여 사용되는 픽셀 예측 방법은 Sample by Sample DPCM (SbS DPCM) 으로서 이 방법에서는 각각의 픽셀을 주변 픽셀로부터 예측하고 그 오차를 전송한다. 본 논문에서는 $4{\times}4$ 블록에 대한 Multiple Partition 예측과 SbS DPCM을 이용하여 H.264/AVC 의 무손실 인트라 압축 효율을 증가시키는 방법을 제안한다. 제안하는 방법은 각 $4{\times}4$ 블록을 $4{\times}4$, $4{\times}2$, $2{\times}4$, $2{\times}2$, $1{\times}1$ 크기의 sub-partition 을 가지는 다양한 partition 으로 예측한다. 이 때 각 sub-partition 들은 SbS DPCM을 이용하여 예측되고 이 때 사용하는 예측 방향의 개수는 예측 방향 정보량을 고려하여 sub-partition 크기에 따라 조절한다. 실험 결과에 의하면 제안하는 방법은 기존 H.264/AVC에 비하여 최대 17.02 %p, 평균 13.29 %p 의 압축율 개선을 보여주며 SbS DPCM만 사용하는 방법에 비하여 최대 4.74 %p, 평균 3.62 %p 정도의 압축율 개선을 보여준다.

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SB-31의 Glycyrrhizin을 지표로 한 Rat과 Rabbit에서의 약물동태 및 심혈관계에 대한 효과 연구 (Pharmacokinetics of Anticancer Agent SB-31 in Rats & Rabbits and the Cardiovascular Effect on the Isolated Perfused Rat Heart & Blood Coagulation)

  • 강원구;박용순;이동흠;권광일
    • 한국임상약학회지
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    • 제8권2호
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    • pp.122-132
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    • 1998
  • SB-31 which contains Pursatilla, Licoris and Ginseng extracts was recently proved as an anticancer agent. In a preclinical effort to be applied this drug to human, pharmacokinetics of SB-31 was carried out in rats and rabbits. Glycyrrhizin(GZ), a saponin of Licoris was used as a standard ingradient for the pharmacokinetics of SB-31. The rat's blood, bile and urine samples were serially collected in femoral vein, common bile duct and bladder, respectively, after bolus i.v. injection at a dose of 1 or 1/5 ampul/rat and rabbit's blood samples from the marginal ear vein at a dose of 1 or 3 amp./rabbit. GZ and glycyrrhetic acid(GA), a major metabolite of GZ in the physiological samples were analysed by HPLC with UV detection. The decline of GZ in plasma concentration was generally biexponential at each dose. GZ was almost completely recovered in bile within 18 hour. GA wasn't detected in the samples with UV detector. In the rat, Vss and Kel at a dose of 1 and 1/5 ampul of SB-31 were $98.06\pm6.07\;ml,\;0.33\pm0.05\;hr^{-1}\;and\;65.46\pm11.19\;ml,\;0.68\pm0.25\;hr^{-1}$, respectively. Those in rabbits at a dose of 3 and 1 ampul of SB-31 were $235.24\pm30.72\;ml,\;0.13\pm0.36\;hr^{-1}\;and\;341.32\pm28.58\;ml,\;0.27\pm0.04\;hr^{-1}$, respectively. 'WinNonlin' was utilized for the compartmental analysis. A two-compartment model was chosen as the most appropriate pbarmaco-kinetic model. The data were best described by using a weighting factor of $1/y^2$. To evaluate the effect of SB-31 on cardiovascular system, serially diluted SB-31 was directly injected into coronary artery in the isolated perfused rat heart and the effect of PSF, PSH, saponins of Pursatilla, and SB-31 on PT, APTT of healthy human plasma was examined. Except the positive inotropic effect of ten times diluted solution of SB-31, there was no significant effect on LVDP, (- dp/dt)/(+dp/dt), heart rate and coronary flow in comparision with that of vehicle. SB-31 had no effect on PT but slightly delayed APTT about $6.9{\sim}11.5\%$. There was no significant effect of PSF and PSH on PT & APTT. Conclusively, SB-31 did not show any notable toxic effects on cardiovascular system.

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MOCVD법으로 성장된 p-형 $Sb_{2-x}Bi_xTe_3$ 박막의 열전특성 (Thermolelectric Properties of p-type $Sb_{2-x}Bi_xTe_3$ grown by MOCVD)

  • 김정훈;권성도;정용철;윤석진;주병권;김진상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.138-139
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    • 2006
  • Metal organic chemical vapor deposition has been investigated for growth of $Sb_{2-x}Bi_xTe_3$ films on (001) GaAs substrates using diisopropyltelluride, triethylantimony and trimethylbismuth as metal organic sources. The thermoelectric properties were measured at room temperature and include Seebeck coefficient, electrical conductivity and Hall effect. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's composition ratio and deposition temperature. The thermoelectric Power factor($={\alpha}^2{\sigma}$) was calculated from theses properties. The best Power factor was $2.6\;{\times}\;10^{-3}W/mK^2$, given by grown $Sb_{1.6}Bi_{0.4}Te_3$ at $450^{\circ}C$. These materials could potentially be incorporated into advanced thermoelectric unicouples for a variety of power generation applications.

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커피와 작두콩 추출물의 혼합에 따른 항염증 효과 (Anti-inflammatory effects of a mixture of coffee and sword bean extracts)

  • 배훈천;박정업;문제학
    • 한국식품과학회지
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    • 제52권3호
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    • pp.237-243
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    • 2020
  • 커피에 작두콩 추출물의 혼합에 따른 항염증 효과를 평가하였다. 커피 추출물과 작두콩 추출물을 1:1, 1:2, 1:3, 1:4, 1:5 (v/v)의 비율로 혼합한 시료를 대상으로 DPPH를 이용한 항산화 활성평가와 세포독성 평가 및 LPS로 염증이 유도된 RAW 264.7 세포에서 염증 매개물질인 NO, 염증성 cytokine인 TNF-α와 IL-6의 생성 및 iNOS 단백질의 발현을 측정하였다. 그 결과, DPPH radical-scavenging 활성은 작두콩 추출물의 농도에 의존적으로 높게 나타났으며, 커피와 작두콩 1:4 (v/v)의 혼합 비율에서 대략 80%의 DPPH radical-scavenging 활성을 보였다. MTS assay로 세포 생존율을 분석한 결과, 커피와 작두콩 1:1, 1:2, 1:3, 1:4, 1:5(v/v) 혼합 추출물 모두에서 세포독성이 나타나지 않았다. LPS로 염증이 유도된 RAW 264.7 세포에서 TNF-α의 발현 저해 효과는 관찰되지 않았지만, iNOS 단백질 발현과 그에 따른 NO와 IL-6의 생성은 효과적으로 억제됨이 확인되었다. 특히, 커피와 작두콩 1:2 (v/v) 혼합 비율에서 IL-6와 iNOS의 발현이 유의하게 감소하였다. 이와 같은 결과를 종합하여볼 때, 작두콩을 커피의 블렌딩 소재로 이용함으로써 항산화와 항염증 기능이 향상된 커피음료의 제조에 응용할 수 있을 것으로 시사되었다.

컴퓨터 시뮬레이션에 의한 콘크리트 교량난간의 동적거동 분석 (Dynamic Analysis of Concrete Rigid Barriers by Computer Simulation)

  • 김재일;안재석;박진환;우광성
    • 한국전산구조공학회:학술대회논문집
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    • 한국전산구조공학회 2004년도 봄 학술발표회 논문집
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    • pp.217-224
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    • 2004
  • This paper proposed a new impact equation by analyzing the form of the proposal section 1 and section 2 proposed by Korea Highway Corporation, F-type, NJ-type and SS-type with HVOSM program Because the impact equation proposed by Ministry Construction & Transportation(1992) considered an only impact velocity, the values of impact loads calculated by HVOSM program are 21.5∼44 times as large as those using equation of MCT. The values of HVOSM program are 1.4 times as large as those of Olson's model because Olson's equation consider impact vehicle, impact velocity and impact angle. But, it does not consider geometric characters, while HVOSM program considers characters. Considering the shapes of sections and the conditions of colliding, HVOSM program can calculate imuact load. As Multiple Regression Analysis is conducted with the calculated values, the R² values of the proposed equations are 0.984 in SB1∼SB3 and 0.958 in SB4∼SB6. After all, the equation proposed in this study have better results than Olson's equation.

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p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

  • Benyahia, Djalal;Kubiszyn, Lkasz;Michalczewski, Krystian;Keblwski, Artur;Martyniuk, Piotr;Piotrowski, Jozef;Rogalski, Antoni
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제16권5호
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    • pp.695-701
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    • 2016
  • Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with $2^{\circ}$ offcut towards <110> at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ray diffraction, Nomarski microscopy, and Hall effect measurements, respectively. Be impurities are well behaved acceptors with hole concentrations as high as $9{\times}10^{17}cm^{-3}$. In addition, the reduction of GaSb lattice parameter with Be doping was studied.