• Bulletin of the Korean Chemical Society
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• v.32 no.8
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• pp.2765-2770
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• 2011

Organic dye-doped glasses, viz., ruthenium (II) tris(4,7'-diphenyl-1,10'-phenanthroline) $[Ru(dpp)_3]^{2+}$ incorporated into thin silica xerogel films produced by the sol-gel method, were prepared and their $O_2$ quenching properties investigated as a function of the $[Ru(dpp)_3]^{2+}$ concentration (3-400 ${\mu}M$) within the xerogel. The ratio of the luminescence from the $[Ru(dpp)_3]^{2+}$-doped films in the presence of $N_2$ and $O_2$ ($I_{N2}/I_{O2}$) was used to describe the film sensitivity to $O_2$ quenching. ($I_{N2}/I_{O2}$ changed three-fold over the $[Ru(dpp)_3]^{2+}$ concentration range. Time-resolved intensity decay studies showed that there are two discrete $[Ru(dpp)_3]^{2+}$ populations within the xerogels (${\tau}_1$ ~ 300 ns; ${\tau}_2$ ~ 3000 ns) whose relative fraction changes as the $[Ru(dpp)_3]^{2+}$ concentration changes. The increased $O_2$ sensitivity that is observed at the higher $[Ru(dpp)_3]^{2+}$ concentrations is a manifestation of a greater fraction of the 3000 ns $[Ru(dpp)_3]^{2+}$ species (more susceptible to $O_2$ quenching). A model is presented to describe the observed response characteristics resulting from $[Ru(dpp)_3]^{2+}$ distribution within the xerogel.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.423-429
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• 2002

RuOx thin films were fabricated by the method of liquid delivery MOCVD using Ru(C$_{8}$ $H_{13}$ $O_2$)$_3$ as the precursor and their thermal effects and conductivity were investigated. Ru films deposited at 25$0^{\circ}C$ were annealed at $650^{\circ}C$ for 1min with Ar, $N_2$ or N $H_3$ ambient. The changes of the micro-structure, the surface morphology and the electrical resistivity of the Ru films after annealing were studied. Ar gas was more effective than $N_2$ and N $H_3$ gases as an ambient gas for the post annealing of the Ru films, because of smaller resistivity and denser grains. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that the Ru $O_2$ phase and the silicidation are not observed regardless of the ambient gases. The minimum resistivity of the Ru film is found to have the value of 26.35 $\mu$Ω-cm in Ar ambient. Voids were formed at Ru/TiN interface of the Ru layer after annea1ing in $N_2$ ambient. The $N_2$ gas generated due to the oxidation of the TiN layer accumulated at the Ru/TiN interface, forming bubbles; consequently, the stacked film may peel off the Ru/TiN interface.e.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.4
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• pp.281-288
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• 2001

PZT thin films (3500$\AA$) have been prepard on the Ru/Ru $O_2$ and Ru $O_2$ bottom electrodes with a RF magnetron sputtering system using P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ ceramic target. Ru/Ru $O_2$ bottom electrode was fabricated by in-situ processing controlled the $O_2$ partial pressure. The PZT thin films deposited on the Ru/Ru $O_2$ bottom electrode were preferred oriented (101) plane. The PZT thin films deposited on the Ru/Ru $O_2$ bottom electrodes showed better electrical properties than those with Ru $O_2$ bottom electrodes because Ru $O_2$ prevented oxygen vacancies and impurities from existing withing the interface and substrate.e.

• Journal of the Korean Chemical Society
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• v.37 no.1
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• pp.98-104
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• 1993

The paramagnetic organoruthenium(III) complexes $({\eta}^5-C_5Me_5)RuCl_2(PR_3) (PR_3 = PMe_3,\;PEt_3,\;PiPr_3,\;PCy_3,\;PMe_2Ph,\;PMePh_2,\;PPh_3,\;P(p-C_6H_4CH_3)_3$, DPPE, DPPB, Py) (2a∼2k) were synthesized by the reaction of $[({\eta}^5-C_5Me_5)RuCl_2]_2$ (1) with 1 equivalent of the corresponding phosphines $(PR_3)$. The effective magnetic moment ((${\mu}_{eff} = 1.65∼2.07 B.M.$)) derived from the magnetic susceptibility measurements of the complexes (2a∼2k) were consistent with the presence of a "single" unpaired electron in the molecule. Treatment of dichlororuthenium (III) complex ({\eta}^5-C_5Me_5)RuCl_2(PR_3)$ (2) (i) with KBr in acetone afforded the dibromoruthenium (III) complex $({\eta}^5-C_5Me_5)RuBr_2(PR_3) (PR_3 = PPh_3)$, (ii) with sodium amalgam in diethylether led to the bis(phosphine) derivatives $({eta}^5-C_5Me_5)RuCl(PR_3)_2 (PR_3 = PMe_3,\;PMePh_2)$, and (iii) with carbonmonoxide gave to the carbonyl derivatives $({\eta}^5-C_5Me_5)RuCl(PR_3)(CO) (PR_3 = PMe_3,\;PPh_3)$.

• Bulletin of the Korean Chemical Society
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• v.16 no.7
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• pp.619-624
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• 1995

Oxidation of triphenylphosphine to triphenylphosphine oxide by [(tpy)(bpy)Ru(O)]2+ (tpy is 2,2':6',2"-terpyridine and bpy is 2,2'-bipyridine) in CH3CN has been studied. Experiments with the 18O-labeled oxo complex show that transfer of oxygen from [(tpy)(bpy)RuⅣ=O]2+ to triphenylphosphine is quantitative within experimental error. The reaction is first order in each reactant with k (25.3 ℃)=1.25 × 106 M-1s-1. The inital product, [(tpy)(bpy)RuⅡ-OPPh3]2+, is formed as an observable intermediate and undergoes slow k (25 ℃)=6.7 × 10-5 s-1 solvolysis. Activation parameters for the oxidation step are ΔH≠=3.5 kcal/mol and ΔS≠=-23 eu. The geometry at ruthenium in the complex cation, [(tpy)(bpy)RuⅡ(OH2)]2+, is approximately octahedral with the ligating atoms being the three N atoms of the tpy ligand, the two N atoms of the bpy ligand, and the oxygen atom of the aqua ligand. The Ru-O bond length is 2.136(5) Å.

• Korean Chemical Engineering Research
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• v.47 no.5
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• pp.608-614
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• 2009

In this work, ruthenium substituted SBA-15's(Ru-SBA15's) of various Si/Ru ratios were prepared using a non-ionic triblock copolymer surfactant, $EO_{20}PO_{70}EO_{20}$, as template. We investigated the nitrogen or oxygen adsorption/desorption behaviors of the Ru-SBA-15's for their future applications as catalysts or selective adsorbents, etc. The pore size of the Ru-SBA-15's was determined by both the Barrett-Joyner-Halenda(BJH)($D_{BJH}$) and the Broekhoff-de Boer analysis with a Frenkel-Halsey-Hill isotherm(BdB-FFF) method($D_{BdB-FHH}$). The $D_{BJH}$ and $D_{BdB-FHH}$ of the Ru-SBA-15 having 50/1 ratio of Si/Ru were 3.9 nm and 4.7 nm, respectively. The transmission electron microscope(TEM) image of the Ru-SBA 15 of the Si/Ru mole ratio of 50 showed that the pore size is 4.7 nm, which is consistent with the $N_2$ adsorption results with the BdB-FHH method. The surface area of pores form oxygen adsorption/desorption isotherm was higher than that from the nitrogen adsorption/desorption isotherm by the Brunauer-Emmett-Teller(BET) method, which were respectively $612.7m^2/g$, and $573.3m^2/g$. X-ray diffraction(XRD) patterns and TEM analyses showed that the mesoporous materials possess well-ordered hexagonal arrays.

• Nuclear Engineering and Technology
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• v.16 no.2
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• pp.58-63
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• 1984

Paper electrophoretic separation of octahedrally bonded (Ruc $l_{6}$ )$^{3-}$ has been carried out by using the specially designed migration apparatus. The supporting electrolyte solutions are as follows: 0.1M-HCl $O_4$, 0.05 M-HCl+0.09M-KCl, 0.1M-HCl, 5$\times$10$^{-3}$ M-NTA, 0.01M-HCl, 0.01M-HCl $O_4$, 0.01M-citric acid, 0.01M-K $H_2$P $O_4$+0.01M-N $a_2$HP $O_4$, 0.05M-borax, 0.025M-N $a_2$C $O_3$+0.025M-NaHC $O_3$, 0.01M-N $a_3$P $O_4$, 0.01M-NaOH and 0.1 M-NaOH. The (Ruc $l_{6}$ )$^{3-}$ appears in 2 to 4 peaks and is found in several chemical species such as (RuCl ($H_2O$)$_{5}$ )$^{2+}$, cis and trans (RuC $l_2$($H_2O$)$_4$)$^{1+}$, (RuC $l_3$($H_2O$)$_3$)$^{0}$ , (RuC $l_4$($H_2O$)$_2$)$^{1-}$, (RuC $l_{5}$ ($H_2O$))$^{2-}$ and (RuC $l_{6}$ )$^{3-}$. The retention value has been found to be highest in the 0.025M-N $a_2$C $O_3$+0.025M-NaHC $O_3$ electrolyte solution.n.

• Journal of Magnetics
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• v.18 no.1
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• pp.39-42
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• 2013

We studied the structural and electrical properties of $SrRuO_3$ thin films grown on $SrTiO_3$ (110) substrate. High resolution X-ray diffraction measurement of the grown film showed 1) very sharp peaks for $SrRuO_3$ film with a very narrow rocking curve with FWHM = $0.045^{\circ}$ and 2) coherent growth behavior having the same in-plane lattice constants of the film as those of the substrate. The resisitivity data showed good metallic behavior; ${\rho}$ = 63(205) ${\mu}{\Omega}{\cdot}cm$ at 5 (300) K with a residual resistivity ratio of ~3. The observed kink at ${\rho}(T)$ showed that the ferromagnetic transition temperature was ~10 K higher than that of $SrRuO_3$ thin film grown on $SrTiO_3$ (001) substrate. The observed rather lower RRR value could be partially due to a very small amount of Ru vacancy generally observed in $SrRuO_3$ thin films grown by PLD method and is evident in the larger unit-cell volume compared to that of stoichiometric thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.58-62
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• 2002

Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ (PZT) thin films deposited on the Pt/Ti and Ru/$RuO_2$ bottom electrode by rf magnetron sputtering methode. Ru/$RuO_2$ bottom electrode deposited on the p-type wafer as Ru thickness by in-situ process. Our results show that all PZT films indicated perovskite polycrystalline structure with perferred orientation (110) and no pyrochlore phase is observed. A well-fabricated $RuO_2$/PZT/Ru(100nm)/$RUO_2$ capacitor showed a leakage current density in the order of $2.13{\times}10^{-7}A/cm^2$ as 100 kV/cm, a remanent polarization of 7.20 ${\mu}C/cm^2$, and a coercive field of 58.37 kV/cm. The results show that the new Ru/$RuO_2$ bottom electrodes are expected to reduce the degradation ferroelectric fatigue and excellent ferroelectric properties.

• Korean Journal of Materials Research
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• v.22 no.3
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• pp.118-122
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• 2012

We synthesized porous $Co_3O_4/RuO_2$ composite using the soft template method. Cetyl trimethyl ammonium bromide (CTAB) was used to make micell as a cation surfactant. The precipitation of cobalt ion and ruthenium ion for making porosity in particles was induced by $OH^-$ ion. The porous $Co_3O_4/RuO_2$ composite was completely synthesiszed after anealing until $250^{\circ}C$ at $3^{\circ}C$/min. From the XRD ananysis, we were able to determine that the porous $Co_3O_4$/RuO2 composite was comprised of nanoparticles with low crystallinity. The shape or structure of the porous $Co_3O_4/RuO_2$ composite was studied by FE-SEM and FE-TEM. The size of the porous $Co_3O_4/RuO_2$ composite was 20~40 nm. From the FE-TEM, we were able to determine that porous cavities were formed in the composite particles. The electrochemical performance of the porous $Co_3O_4/RuO_2$ composite was measured by CV and charge-discharge methods. The specific capacitances, determined through cyclic voltammetry (CV) measurement, were ~51, ~47, ~42, and ~33 F/g at 5, 10, 20, and 50 mV/sec scan rates, respectively. The specific capacitance through charge-discharge measurement was ~63 F/g in the range of 0.0~1.0 V cutoff voltage and 50 mAh/g current density.