• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.98-104
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• 2002

CeO$_2$ and NiO buffers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition(MOCVD) and the deposition behavior were investigated. The degree of texture of deposited CeO$_2$ and NiO films was strongly dependent on the deposition temperature(T$\sub$d/) and oxygen partial pressure(P$\sub$O$_2$/). ($\ell$00) textured films were well deposited at specific deposition temperatures and oxygen partial pressures. The in-plane and out of plane textures estimated form the full width half maximum of the pole figure peaks were less than 10$^{\circ}$. The surface morphology showed that the CeO$_2$ films consisted of columnar grains grown normal to the Ni substrates, while NiO films were slate and clean like a mirror. The surface roughness of both films estimated by atomic force microscopy(AFM) were as smooth as 3-10 m. The growth rate of the films is much faster than that of other physical deposition methods.

• 한국세라믹학회지
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• 제32권2호
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• pp.234-238
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• 1995

MgFe2O4 formation, grain growth in Fe2O3, Fe solid-solution limit in MgO for MgO-Fe2O3 mixture were studied by means of investigating the distribution of phases and compositions in reaction area between MgO and Fe2O3. The reaction area at equlibrium was composed with MgO-FexO matrix and MgFe2O4 precipitation, MgFe2O4 was formed by precipitating from MgO-FexO matrix dependent on oxygen partial pressure. Fe contents was exponentially decreased with diffusion distance in MgO single crystal, and thus Fe solid-solution limitation in MgO was about 4mol%. The grain growth rate in Fe2O3 base was increased with Mg contents diffused from MgO single crystal.

• 한국광학회:학술대회논문집
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• 한국광학회 2009년도 동계학술발표회 논문집
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• pp.231-232
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• 2009

• 한국세라믹학회지
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• 제28권12호
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• pp.989-995
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• 1991

By means of the secondary ion mass spectrometer, the tracer diffusion of oxygen in rutile single crystal was measured as function of temperature and oxygen partial pressure. The tracer diffusivity was determined from the depth profile of 18O. The Po2 dependence of D suggests that the dominant defects in TiO2-y are oxygen vacancies (V{{{{ { ‥} atop { o} }}) and interstitial titanium ions (Ti{{{{ {‥‥} atop {i} }}). The doubly ionized oxygen vacancies are prominent at low temperature and Po2. However, the tetravalent interstitial titanium ions predominate at teperature above 120$0^{\circ}C$.

• 대한전자공학회논문지
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• 제27권6호
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• pp.886-894
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• 1990

Sinterbility, microstructure, mechenical and electrical properties of yttriastabilized zirkconiz (92 mole % ZrO2 + 8 mole % Y2O3) doped with 0.5 mole % SiO2 and 0-2.O mole% Al2O3 were studied as a functin of Al2O3 addition. Sintered density increased with increasing Al2O3 addition up to o.5 mole%but decreased up to 1.0mole% Al2O3. Vickers hardness is proportional to sintered density. The specimen added 0.5mole% Al2O3 and 0.5mole% SiO2 exhibited a maximum conductivity. And the specimen added 0.5 mole % Al2O3 and 0.5 mole% SiO2 was measured a maximum electromotive force for a characteristics of oxyzen partial pressure.

• 한국세라믹학회지
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• 제43권12호
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• pp.805-811
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• 2006

The microstructural changes in Ni/YSZ anode substrate and crack formation during Ni oxidation were investigated. The composition of as-sintered anodes was 56 wt% NiO+44 wt% YSZ and that of electrolyte was 8 mol% yttria. After complete reduction, specimens were oxidized in $N_2$ + air at $600\sim800^{\circ}C$. Oxygen partial pressure was controlled in between 0.05 atm and 0.2 atm $O_2$. When the anode was oxidized, at higher than $690^{\circ}C$, three layers were formed in the specimens. The first was fully oxidized layer(NiO/YSZ), the second was a mixed layer and the third, near-intact layer. Under $640^{\circ}C$ such distinctive layers were not observed. Cracks formed at electrolyte layer when weight gain attained at $65\sim75%$ of the total gain due to complete oxidation despite of different oxidation temperature and oxygen partial pressure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.52-53
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• 2005

$Y_2O_3$ film was directly deposited on Ni-3at%W substrate using DC reactive sputtering technique. Metallic yttrium was used for DC sputtering target and water vapor was used for oxidizing the deposited metallic Yttrium atoms on the substrate. The window of the water vapor turned out to be broad. The minimum partial pressure of water vapor was determined by sufficient oxidation of the $Y_2O_3$ film, and the maximum partial pressure of water vapor was determined by the non-oxidation of the target surface. As the sputtering power was increased, The deposition rate increased without narrowing the window. The fabricated $Y_2O_3$ films showed good texture qualities and surface morphologies. The YBCO film deposited directly on the $Y_2O_3$ buffered Ni-3at%W substrate showed $T_c$, $I_c$ (77 K, self field), and $J_c$ (77 K, self field) of 89 K, 64 A/cm and 1.l $MA/cm^2$, respectively.

• 대한화학회지
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• 제29권6호
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• pp.608-614
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• 1985

$ZrO_2$가 10, 20, 30, 40, 그리고 50 mol% 포함된 $ZrO_2-Sm_2O_3$계의 전기전도도를 500 ~ 1000$^{\circ}C$와 $10^{-5}~10^{-1}Po_2$ atm에서 측정하였다. 전기전도도를 온도의 함수로 도시한 결과 650$^{\circ}C$ 근처에서 온도의존성이 큰 고온영역과 적은 저온영역으로 구분되었으며 두 개의 각기 다른 결함구조를 보여 주었다. 전기전도도가 산소분압의 증가에 따라 증가하므로 P형의 전자성 반도체이며 고온영역에서 산소압력의존성은 ${\sigma}{\propto}Po_2^{1/5.3}$, 저온영역에서 ${\sigma}{\propto}Po_2^{1/6}$에 가까운 값을 나타냈다. ${\sigma}{\propto}Po_2^{1/5.3}$인 영역에서의 defect는 Oi"이며 ${\sigma}{\propto}Po_2^{1/6}$인 영역에서의 defect는 $Vs_m$"'이다. 고온영역에서 carrier type은 electron hole이며 저온영역에서는 이온성의 기여도가 있다. 이러한 이온성의 기여는 dopant의 양이 증가할 수록 커진다. 60mol% 가 포함된 $ZrO_2-Sm_2O_3$계에서는 전기전도도는 산소압력이 감소함에 따라 증가하였다.

• 한국세라믹학회지
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• 제34권12호
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• pp.1221-1226
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• 1997

The effects of sintering atmosphere and dopant addition on the behavior of densification and grain growth of SnO2 ceramics were investigated with consideration of defect chemistry. CoO and Nb2O5 were chosen as dopants, and oxygen and nitrogen were used for controlling of sintering atmospheres. With the decrease of oxygen partial pressure, densification was depressed due to evaporation of SnO2 ceramics. In the case of SnO2 sintering, the addition of CoO, which produced oxygen vacancy in SnO2 ceramics, led to acceleration of densification and grain growth. On the contrary, when Nb2O5 as a dopant producing Sn vacancy was added to SnO2 ceramics, densification and grain growth were simultaneously retarded. As results, it was conformed that diffusion of oxygen ions was rate determinant in densification and grain growth of SnO2 ceramics.

• The Korean Journal of Ceramics
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• 제4권2호
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• pp.151-155
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• 1998

The total electrical conductivity, ionic conductivity, and nonstoichimetry of a new cathode material $Y_{1-x}Ca_xFeO_{3-\delta}$ (x=0.1) were measured as functions of temperature ($900\leqT/^{\circ}C\leq1100$) and oxygen partial pressure $(10^{-6}\leqPo_2/atm\leq0.21$). Isothermal variations of these properties with $Po_2$ support that the majority type of ionic defects are anti-Frenkel disorder which, however, has seldom been considered for perovskite-based oxides. The results are discussed in comparison with those reported on similar oxides.