• Journal of Sensor Science and Technology
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• v.6 no.3
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• pp.200-206
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• 1997

Using $SiCl_{2}H_{2}$, $NH_{3}$ and $N_{2}O$, we have fabricated silicon oxynitride ($Si_{x}O_{y}N_{z}$) layers on thermally oxidized silicon wafer by low pressure chemical vapor deposition. Three different compositions were achieved by controlling gas flow ratios($NH_{3}/N_{2}O$)) to 0.2, 0.5 and 2 with fixed gas flow of $SiCl_{2}H_{2}$. Ellipsometry and high frequency capacitance-voltage(HFCV) measurements were adapted to investigate the difference of the refractive index, dielectric constant, and composition, respectively. Regardless of nitride content, silicon oxynitrides had similar stability to silicon nitrides. The relative standing of alkali ion sensitivity in silicon oxynitride layers was influenced by nitride content. The better alkali ion-sensitivity was achieved by increasing oxide content in bulk of silicon oxynitrides.

• Journal of Sensor Science and Technology
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• v.27 no.5
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• pp.345-351
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• 2018

We employed an unprecedented technique to synthesize porous $WO_3@SnO_2$ nanofibers exhibiting core-shell and fiber-in-tube configurations. Firstly, 2-methylimidazole was uniformly incorporated in as-spun nanofibers containing ammonium metatungstate hydrate and the sacrificial polymer (polyacrylonitrile). Secondly, the 2-methylimidazole on the surfaces of nanofibers was complexed with tin(II) chloride ($SnCl_2$) via simple impregnation of the as-spun nanofibers in ethanol containing tin(II) chloride dihydrate ($SnCl_2{\cdot}2H_2O$). The presence of vacant p-orbitals in tin (Sn) and the nucleophilic nitrogen on the imidazole ring allowed for the reaction between $SnCl_2$ and 2-methylimidazole, forming adducts on the surfaces of the as-spun nanofibers. The calcination of these nanofibers resulted in porous $WO_3@SnO_2$ nanofibers with a higher surface area ($55.3m^2{\cdot}g^{-1}$) and a better response to 1-5 ppm of acetone than pristine $SnO_2$ NFs synthesized using a similar method. An improved response to acetone was achieved upon functionalization of the $WO_3@SnO_2$ nanofibers with catalytic palladium nanoparticles. This work demonstrates the potential application of $WO_3@SnO_2$ nanofibers as sensing layers for chemiresistive sensory devices for the detection of acetone in exhaled breath.

• Korean Journal of Materials Research
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• v.16 no.8
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• pp.503-510
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• 2006

The measurement of specific gases is based on the reversible conductivity change of sensing materials in semiconductor type gas sensors. For an application as gas sensors of high sensitivity, porous $SnO_2$ films have been fabricated by anodizing of pure Sn foil in oxalic acid and characteristics of anodic tin oxide films have been investigated. Pore diameter and distribution were dependent on process conditions such as electrolyte concentration, applied voltage, anodizing temperature, and time. Characteristics of anodic films were explained with current density-time curves.

• Journal of Sensor Science and Technology
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• v.14 no.3
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• pp.160-168
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• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_{2}O_{3}$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_{2}O_{3}$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}1016cm^{-3}$ and $299cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=3.3973 eV-($2.69{\times}10^{-4}$ eV/K)$T^{2}$/(T+463K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{6}$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n = 1.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.7-13
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• 1995

A new FET type semiconductor pressure sensor (PSFET : pressure sensitive field effect transistor) was fabricated and its operational characteristics were investigated. A ZnO thin film as a piezoelectric layer, $5000{\AA}$ thick, was deposited on a gate oxide of FET by RF magnetron sputtering. The deposition conditions to obtain a c-axis poling structure were substrate temperature of $300^{\circ}C$, RF power of 140watt, and working pressure of 5mtorr in Ar ambience. The fabricated PSFET device showed good linearity and stability in the applied pressure range($1{\times}10^{5}\;Pa{\sim}4{\times}10^{5}\;Pa$).

• Journal of Korean Society of Water and Wastewater
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• v.31 no.5
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• pp.373-381
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• 2017

$RuO_2$ is a common active component of Dimensionally Stable Anodes (DSAs) for chlorine evolution that can be used in wastewater treatment systems. The recent improvement of chlorine evolution using nanostructures of $RuO_2$ electrodes to increase the treatment efficiency and reduce the energy consumption of this process has received much attention. In this study, $RuO_2$ nanorod and nanosheet electrodes were simply fabricated using the sol-gel method with organic surfactants as the templates. The obtained $RuO_2$ nanorod and nanosheet electrodes exhibit enhanced electrocatalytic activities for chlorine evolution possibly due to the active surface areas, especially the outer active surface areas, which are attributed to the increase in mass transfers compared with a conventional nanograin electrode. The electrocatalytic activities for chlorine evolution were increased up to 20 % in the case of the nanorod electrode and 35% in the case of the nanosheet electrode compared with the nanograin electrode. The $RuO_2$ nanorod 80 nm in length and 20-30 nm in width and the $RuO_2$ nanosheet 40-60 nm in length and 40 nm in width are formed on the surface of Ti substrates. These results support that the templated $RuO_2$ nanorod and nanosheet electrodes are promising anode materials for chlorine evolution in future applications.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.45-50
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• 1995

The excellent c-axis oriented zinc oxide thin films were prepared by the RF magnetron sputtering method on glass substrates. Optimum fabrication conditions of the ZnO films were such that RF power, substrate temperature, and gas pressure of mixture Ar(50%):$O_{2}$(50%) were 150 W, $200^{\circ}C$, and 5 mTorr, respectively. In these conditions, the deposition rate was $310\;{\AA}/min$, and the resistivity of the film was $1{\times}10^6\;{\Omega}{\cdot}cm$. The ZnO film also showed high c-axis orientation and crystalinity according to XRD pattern and SEM photograph. A fabricated interdigital transducer generated 1st mode surface acoustic wave at 46.6 MHz and 2nd mode surface acoustic wave at 52.5 MHz. At the 1st mode, the phase velocity of surface acoustic wave and the electromechanical coupling coefficient were 2795 m/sec and 0.031 %, respectivly. At the 2nd mode, they were 3149 m/sec and 0.019 %. respectivly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.337-337
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• 2008

Acoustic emission(AE) 센서의 감도개선을 위해 적합한 압전소자의 특성향상에 대해 연구하였다. AE 센서기술은 재료 내부에 마이크로크랙에 의해 변형과 손상이 생길 때 발생하는 기계적인 진동을 고감도 압전소자를 통해 전기적인 신호로 변환해 재료의 이상 유무를 알 수 있는 유용한 방법이다. AE 센서는 압전소자와 구리 캡 그리고 구리와 황동재질의 떨림판으로 구성되어 있다. 재료의 손상을 알기위한 변위가 낮을 경우 약한 AE 신호가 발생하며 검출하기가 어렵다. 미세변위에 의한 AE신호를 검출하기 위해서는 우수한 전기기계결합계수 (kp)와 압전상수($d_{33}$)를 갖는 압전소자가 필요하다. 이에 본 연구에서는 Pb$(Zr_{0.54}Ti_{0.46})O_3$ + x wt%$Cr_2O_3$ + y wt%$Nb_2O_5$ 조성에서 $Cr_2O_3$, $Nb_2O_5$ 첨가량 x, y 변화에 따른 압전특성과 AE센서특성을 고찰하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.389.2-389.2
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• 2016

The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

• Journal of Sensor Science and Technology
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• v.31 no.2
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• pp.125-130
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• 2022

We describe the importance of zinc oxide nanoparticle (ZnO NP) concentration in the enhancement of electrical properties in a lead sulfide quantum dot (PbS QD)-based shortwave infrared (SWIR) photodetector. ZnO NPs were synthesized using the sol-gel method. The concentration of the ZnO NPs was controlled as 20, 30 and 40 mg/mL in this study. Note that the ZnO NPs layer is commonly used as an electron transport layer in PbS QDs SWIR photodetectors. The photo-to-dark ratio, which is an important parameter of a photodetector, was intensively examined to evaluate the electrical performance. The 20 mg/mL condition of ZnO NPs exhibited the highest photo-to-dark ratio value of 5 at -1 V, compared with 1.8 and 0.4 for 30 mg/mL and 40 mg/mL, respectively. This resulted because the electron mobility decreased when the concentration of ZnO NPs was higher than the optimized value. Based on our results, the concentration of ZnO NPs was observed to play an important role in the electrical performance of the PbS QDs SWIR photodetector.