• Korean Chemical Engineering Research
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• v.51 no.4
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• pp.518-522
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• 2013

Cyclohexanone is important intermediate for the manufacture of caprolactam which is monomer of nylron. Cyclohexanone is generally produced by dehydrogenation reaction of cyclohexanol. In this study, highly mesoporous metal oxides such as meso-$WO_3$, meso-$TiO_2$, meso-$Fe_2O_3$, meso-CuO, meso-$SnO_2$ and meso-NiO were synthesized using mesoporous silica KIT-6 as a hard template via nano-replication method for dehydrogenation of cyclohexanol. The overall conversion of cyclohexanol followed a general order: meso-$WO_3$ >> meso-$Fe_2O_3$ > meso-$SnO_2$ > meso-$TiO_2$ > meso-NiO > meso-CuO. In particular, meso-$WO_3$ significantly showed higher activity than the other mesoporous metal oxides. Therefore, the meso-$WO_3$ has wide range of application possibilities for dehydrogenation of cyclohexanol.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.91-91
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• 2012

We aim in synthesizing various functional thin films thinner than ~ 10 nm for environmental applications and photovoltaic devices. Atomic layer deposition is used for synthesizing inorganic thin films with a precise control of the film thickness. Several examples about application of our thin films for removing volatile organic compounds (VOC) will be highlighted, which are summarized in the below. 1) $TiO_2$ thin films prepared by ALD at low temperature ($<100^{\circ}C$) show high adsorption capacity for toluene. In combination with nanostructured templates, $TiO_2$ thin films can be used as building-block of high-performing VOC filter. 2) $TiO_2$ thin films on carbon fibers and nanodiamonds annealed at high temperatures are active for photocatalytic oxidation of VOCs, i.e. photocatalytic filter can be created by atomic layer deposition. 3) NiO can catalyze oxidation of toluene to $CO_2$ and $H_2O$ at $<300^{\circ}C$. $TiO_2$ thin films on NiO can reduce poisoning of NiO surfaces by reaction intermediates below $200^{\circ}C$. We also fabricated inverted organic solar cell based on ZnO electron collecting layers on ITO. $TiO_2$ thin films with a mean diameter less than 3 nm on ZnO can enhance photovoltaic performance by reducing electron-hole recombination on ZnO surfaces.

• Korean Journal of Materials Research
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• v.11 no.1
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• pp.44-47
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• 2001

Effects of $Er_2O_3$ addition on the dielectric properties of non-reducible $BaTi_3$-based X7R dielectrics with Ni electrode have been studied in reducing atmosphere. X7R with moderate temperature-dependence was developed after addition of $Er_2O_3$ with $MnO_2-MgO$; room-temperature dielectric constant and dissipation factor were >2900 and < 1.0%, respectively. The addition of $Er_2O_3$ greater than 3.0 mol% improved the temperature dependence of dielectric properties, but a significant decrease of the dielectric constant at room-temperature was observed. The TCC curves rebated clockwise with increasing MnO$_2$ content at a given additive system, 1.5 mol% $Er_2O_3$ and 2.0 mol% MgO.

• The Journal of the Acoustical Society of Korea
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• v.6 no.4
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• pp.55-63
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• 1987

Modified $PbTiO_3$ piezoelectric ceramics added with 0.2, 0.25, 0.3 mol of $CaCO_3$ and 0.04 mol of $(Co_{\frac{1}{2}}W_{\frac{1}{2}})$ and 0.05 mol of $MnO_2$ and NiO have been fabricated. These ceramics can be poled sufficiently within 10 minutes at $100^{\circ}C$ under about d.c. field of 40 kv/cm. Detailed measurement was performed on dielectric constants, cutie temperatures, elastic and piezoelectric properties and coupling factors for the fabricated ceramics. The most value of the piezoelectric coupling factors was coupling factor of thickness mode kt and its value for 0.25 mol of Ca was about $45\%$. Dielectric constants of $\varepsilon_{33}^T$ and $\varepsilon_{11}^T$ for 0.25 mol of Ca were 242 and 260, and coupling factor ratio (kt/Kp) and Qm were 6 and 357 respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.330-330
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• 2008

$Fe_2O_3$ added Pb$(Ni_{1/3}Nb_{2/3})O_3-PbTiO_3-PbZrO_3 $ (PNN-PT-PZ) ceramics were produced in order to use them as a bimoph acturator for energy harvesting. Especially, the 0.25 wt% $Fe_2O_3$ added 0.4PNN-0.357PT-0.243PZ, having the composition of morphotropic phase boundary, showed good piezoelectric properties of $d_{33}$ of 810 pC/N, $k_p$ of 77% and $Q_m$ of 55 along with a high Curie temperature of $210^{\circ}C$. A bimorph actuator, composed of the two piezoelectric layers bonded together with a phosphorous bronze layer as a central metallic electrode, was successfully fabricated. The bimorph actuator, vibrated with a 1.3 mm amplitude at 68 Hz, produced high electric power of approximately 60 mW.

• Journal of the Korean Electrochemical Society
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• v.24 no.4
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• pp.120-132
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• 2021

Although the development of high-Nickel is being actively carried out to solve the capacity limitation and the high price of raw cobalt due to the limitation of high voltage use of the existing LiCoO₂, the deterioration of the battery characteristics due to the decrease in structural stability and increase of the Ni content. It is an important cause of delaying commercialization. Therefore, in order to increase the high stability of the Ni-rich ternary cathod material LiNi_0.6Co_0.2Mn_0.2O₂, precursor Ni_0.6Co_0.2Mn_0.2-x(OH)₂/xTiO₂ was prepared using a nanosized TiO₂ suspension type source for uniform Ti substitution in the precursor. It was mixed with Li₂CO₃, and after heating, the cathode active material LiNi_0.6Co_0.2Mn_0.2-xTi_xO₂ was synthesized, and the physical properties according to the Ti content were compared. Through FE-SEM and EDS mapping analysis, it was confirmed that a positive electrode active material having a uniform particle size was prepared through Ti-substituted spherical precursor and Particle Size Analyzer and internal density and strength were increased, XRD structure analysis and ICP-MS quantitative analysis confirmed that the capacity was effectively maintained even when the Ti-substituted positive electrode active material was manufactured and charging and discharging were continued at high temperature and high voltage.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.75-78
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• 2004

$Bi_{3.25}Eu_{0.75}Ti_3O_{12}$ (BET) thin films were deposited on the $LaNiO_3$ (LNO (100))/Si and Pt/Ti/$SiO_2$/Si substrates by the metal-organic decomposition method. Structural and dielectric properties of BLT thin films for the applications in nonvolatile ferroelectric random access memories were investigated. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures $650^{\circ}C$, the BET thinfilms were successfully deposited on LNO bottom electrode and exhibited (001) and (117) orientation. Compared with the Pt electrode films, the BET thin films on the LNO electrode annealed at $650^{\circ}C$ showed better dielectric constantsand remanent polarization. The BET thin films on the LNO electrode for the annealing temperature of $650^{\circ}C$, the remanent polarization Pr and coercive field were $45.6\;C/cm^2$ and 171 kV/cm, respectively.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.134-140
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• 1997

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.193-195
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• 1994

In this study, the structural, dielectric and piezoelectrical properties of $xPb(Mg_{1/2}W_{1/2})O_3-(1-x)[0.41Pb(Ni_{1/3}Nb_{2/3})O_3-0.36PbTiO_3-0.23P Zr)_3]$ (x=0, 0.01, 0.02, 0.03, 0.04, 0.05) system ceramics were investigated. The dielectric constant ${\varepsilon_{33}}^{\tau}$ at loon temperature increased up to 3mol% PMW and decreased with further PMW content. The specimen with 1mol% $Pb(Mg_{1/2}W_{1/2})O_3$, which has the ${\varepsilon_{33}}^{\tau}=5509$, kp=59[%] and $d_{33}=758{\times}10^{-12}[C/N]$, exhibits good characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.65-67
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• 1990

In this study, (0.80-x)Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-$PbTiO_3$-Pb($Ni_\frac{1}{2}W_\frac{1}{2}$)$O_3$ 0.05$\leq$x$\leq$0.20) ceramics were fabricated by the mixed oxide method, the sintering temperature and time were 950∼1200[$^{\circ}C$], 2[hr], respectively. The dielectric and structural properties with composition and sintering temperature were investigated for the application as multilayer ceramic capacitors. Dielectric constant of 0.70PMN-0.2PT-0.10PNW composition with repeated calcination was increased rapidly. Increasing the Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-$PbTiO_3$-Pb($Ni_\frac{1}{2}W_\frac{1}{2}$)$O_3$ contents from 0.05 to 0.20 [mol], phase transition temperature was shifted from 68 to 2[$^{\circ}C$] and dielectric constant was decreased while sintered density was increased. In the specimens containing 0.10, 0.15[mol] of PNW, dielectri constants at room temperature were exhibited the highest values 11199, 10114, respectively. Resistivity of specimens were $10^{10}$ ∼ $10^{12}$($\Omega$.m) and there was no dependence on sintering temperature and composition.