• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.91-94
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• 2002

The conditions of zone-melting method such as a sample travel speed in a furnace, content of Nd422, control of melting temperature, and heat-treatment with/without Ar gas for $NdBa_{2}Cu_{3}O_{7-\delta}$ superconductor was optimized, As a results, a $NdBa_{2}Cu_{3}O_{7-\delta}$ sample with a surface area of $25mm^{2}$ showed a good superconducting properties when its travel speed was 6 mm/h, The improvement of superconductivity added with 10~20 wt% of Nd422 phase increasing pinning effect was also shown. The critical current density, $J_{c}$ was remarkable affected by the condition of heat-treatment temperature of $NdBa_{2}Cu_{3}O_{7-\delta}$superconductor with/without Ar ambient gas.

• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.21-24
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• 2002

Two kinds of $Nd_{1+X}Ba_{2-X}Cu_3O_{7-{\delta}}$, the sintering samples and zone melting samples, were heat-treated under pure Ar at 950$^{circ}C$. The substitution of Nd ion for Ba ion in the $Nd_{1+X}Ba_{2-X}Cu_3O_{7-{\delta}}$ before and after the heat treatment was investigated by XRD. In order to confirm the effects of the heat treatment, the Tc and Jc of samples with/without the heat treatment under Ar were comparatively studied. $Nd_{1+X}Ba_{2-X}Cu_3O_{7-{\delta}}$ samples were oxygenated under pure oxygen at $300^{circ}C$. From the XRD pattern it was found that the sample with x<0.4 was transferred from tetragonal phase to orthorhombic phase after the oxygenation, while the sample with x>0.4 did not show the phase transition even after a long time oxygenation. Therefore, the low oxygen partial pressure (Ar+1 % O$_2$) was used for the ambient atmosphere of the zone-melting samples, which could reduce the melting temperature and depress the substitution of Nd for Ba. After the improvement in the zone-melting process, the Jc value was increased to 2 x $10^4$A/$cm^2$ (0 T, 78 K). The particle orientation and the structure of zone-melted NdBaCuO were studied by the XRD and SEM analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.624-627
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• 2001

Two kinds of Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{7-{\delta}}$, the sintering samples and zone melting samples, were heat treated under pure Ar at 95$0^{\circ}C$. The substitution of Nd ion for Ba ion in the Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{7-{\delta}}$ before and after the heat treatment were investigated by XRD. In order to know the effects of the heat treatment, the T$_{c}$ and J$_{c}$ of samples with the heat treatment and those without the heat treatment by Ar were comparatively studied. The results show that the substitution of Nd for Ba decreased, T$_{c}$, and J$_{c}$ increased after the treatment under Ar at 95$0^{\circ}C$. The Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{7-{\delta}}$ samples were oxygenated under pure oxygen at 30$0^{\circ}C$. From the XRD pattern it was found that the sample with x< 0.4 could transfer from tetragonal phase to orthorhombic phase after the oxygenation, but the sample with x>0.4 could not make the phase transition even after a long time oxygenation.ion even after a long time oxygenation.ation.n.ation.ation.

• Progress in Superconductivity and Cryogenics
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• v.6 no.4
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• pp.9-12
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• 2004

We report a successful fabrication of high-$J_C$ $NdBa_2Cu_3O_{7-{\delta}}$ (NdBCO) films on (100) $SrTiO_3$ substrates by pulsed laser deposition (PLD) in high oxygen pressures ranging from 400 to 800 mTorr. Fabricated NdBCO films exhibited only c-axis orientation, good out-of-plane and in-plane textures, and also excellent superconducting properties, including critical temperature ($T_C$) and critical current density ($J_C$) of above 90 K and the highest of $3.1MA/cm^2$ at 77 K in self-field, implying that NdBCO is a perspective alternative to YBCO for coated conductor. In low oxygen pressures ranging from 100 to 200 mTorr, however, the films showed a-, c-mixed orientation and degraded $T_{C,zero}$ values due to the formation of $Nd_{1+x}Ba_{2-x}Cu_3O_{7-{\delta}}$-type solid solutions with an excessive substitution of $Nd^{3+}$ ions for the $Ba^{2+}$ sites.

• Progress in Superconductivity and Cryogenics
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• v.11 no.2
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• pp.1-6
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• 2009

We report a successful fabrication of $high-J_c\;NdBa_2Cu_3O_{7-{\delta}}$ (NdBCO) films on $SrTiO_3$(STO) (100) substrates by pulsed laser deposition (PLD) in a relatively wide processing window. Under various oxygen pressures controlled by either 1%$O_2$/Ar mixture gas or pure $O_2$ gas, strongly c-axis oriented NdBCO films were grown at the substrate temperature $(T_s)\;of\;800^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas and also in 400 and 800 mTorr with pure $O_2$ gas. These samples exhibited $T_c$ values over 90K and $J_c$ values of $2.8-3.5MA/cm^2$ at 77K in self-field (77K, sf). On the other hand, $J_c$ values over $1A/cm^2$ were obtained at the temperature regions of $700-830^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas at those of $750-830^{\circ}C$ in 800 mTorr with pure $O_2$ gas. Unlike previous reports, resent results support that the PLD processing window for high-Jc NdBCO films is not narrow.

• 한국초전도학회:학술대회논문집
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• v.13
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• pp.34-34
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• 2003

• Progress in Superconductivity
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• v.10 no.2
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• pp.133-138
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• 2009

The $Nd_{1+x}Ba_{2-x}Cu_3O_{7-{\delta}}$(Nd123) superconductor exhibits high performance in high magnetic field and high temperature. We have studied phase stability for Nd123 under reduced oxygen partial pressure and various heat-treatment conditions. The main phase is Nd123 and some samples contain small amounts of Nd422 depending on the temperature and oxygen partial pressure. The decomposition temperature decreases with decreasing oxygen partial pressure from $1052^{\circ}C(P(O_2)$=150 Torr) to about $845^{\circ}C(P(O_2)$=0.1 Torr). The liquidus line was steeper temperature with decreasing oxygen partial pressure. In same condition of oxygen partial pressure, the region of stable Nd123 phase was formed at slightly higher temperature than the region of stable YBCO phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.05a
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• pp.3-3
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• 2009

In order to investigate the possibility of using mixed rare earth $(Nd_{1/3}Eu_{1/3}Gd_{1/3})Ba_2Cu_3O_{7-x}$ (NEG123) as the superconducting layer of the HTS coated conductor, the NEG123 thin film was deposited epitaxialy on LAO(100) single crystal and IBAD_YSZ metal templates by pulsed laser deposition. Systematic studies were carried out to investigate the influences of deposition parameters of PLD on the micro structure, texture and superconducting properties of NEG-123 coated conductor. Deposition at oxygen partial pressure of 600 mTorr was needed to routinely obtain high quality NEG123 films with $J_c$'s (77K) over 2 MA/$cm^2$ and Tc's over 90K (${\Delta}T{\sim}2\;K$). We verified from magnetization study that the NEG123 has an improved in-field Jc as the field increases at temperatures between 10 K and 77 K compared with Gd123. The $J_c$ (77K, self field) and the value of onset $T_c$ of NEG123 thin film on LAO substrate was $4.0MA/cm^2$ and 92K, respectively. This is the first report, to the best of our knowledge, of coated conductors with NEG123 film as the superconducting layer which have Ic and Jc over 40 A/cm-width and 1.6 MA/$cm^2$ at 77K, self field. This study shows the possibility of using NEG123 film as the superconducting layer of the HTS coated conductor which can be used in high magnetic field power electric devices.

• Progress in Superconductivity and Cryogenics
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• v.13 no.1
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• pp.1-5
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• 2011

[ $CeO_2$ ]has been widely used for single buffer layer of coated conductor because of superior chemical and structural compatibility with $ReBa_2Cu_3O_{7-{\delta}}$(Re=Y, Nd, Sm, Gd, Dy, Ho, etc.). But, the surface of $CeO_2$ layer showed cracks because of the large difference in thermal expansion coefficient between metal substrate and deposited $CeO_2$ layer, when thickness of $CeO_2$ layer exceeds 100 nm on the biaxially textured Ni-3%W substrate. The deposition rate has been limited to be less than 6 $\AA$/sec in order to get a good epitaxy. In this research, we deposited $CeO_2$ single buffer layers on biaxially textured Ni-3%W substrate with 2-step process such as thin nucleation layer(>10 nm) with low deposition rate(3 $\AA$/sec) and thick homo epitaxial layer(>240 nm) with high deposition rate(30 $\AA$/sec). Effect of deposition temperature on degree of texture development was tested. Thick homo epitaxial $CeO_2$ layer with good texture without crack was obtained at $600^{\circ}C$, which has ${\Delta}{\phi}$ value of $6.2^{\circ}$, ${\Delta}{\omega}$ value of $4.3^{\circ}$ and average surface roughness(Ra) of 7.2 nm within $10{\mu}m{\times}10{\mu}m$ area. This result shows the possibility of preparing advanced Ni substrate with simplified architecture of single $CeO_2$ layer for low cost coated conductor.