• E2M - 전기 전자와 첨단 소재
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• 제9권9호
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• pp.906-910
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• 1996

Ferroxplana N $i_{2}$Y(B $a_{2}$N $i_{2}$F $e_{12}$ $O_{22}$ ) magnetic particles, which is one of the hexagonal ferrite were synthesized by a coprecipitation method. The coprecipitates were prepared by adding aqueous solution of BaC $I_{2}$ - 2 $H_{2}$O, NiC $I_{2}$ - 6 $H_{2}$O and FeC $I_{3}$ - 6 $H_{2}$O(of which the mole ratio is $Ba^{+2}$ : N $i^{+2}$ : F $e^{3+}$= 1 : 1 : 6) to a mixture of NaOH and N $a_{2}$C $O_{3}$. The shape of Ferroxplana N $i_{2}$Y magnetic particles obtained at 1, 100(.deg. C) was hexagonal plate-like, average particle size and aspect ratio were 2(.mu.m) and 7, respectively.y.

• 정보관리학회지
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• 제6권1호
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• pp.15-36
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• 1989

마이크로 컴퓨터의 급속한 성장에 따라 그 이용 범위 또한 넓어지게 되었다. 본고에 서는 이러한 마이크로 컴퓨터를 이용해 원자력 정책 자료 검색 시스템을 설계하였다.

• Journal of Plant Biology
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• 제29권1호
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• pp.53-65
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• 1986

The montane forests of Ulreung Island, Korea, were investigated by the ZM school method. By comparing the montane forests of this island with those of Korean Peninsula and of Japan, a new order, F a g e t a l i a m u l t i n e r v i s, a new alliance, F a l g i o n m u l t i n e r v i s, a new association, H e p a t i c o-F a g e t u m m u l t i n e r v i s and Rhododendron brachycarpum-Pinus parviflora community were recognized. The H e p a t i c o - F a g e t u m m u l t i n e r v i s was further subdivided into four subassociations; Subass. of Sasa kurilensis, Subass. of Rumohra standishii, Subass. of Rhododendron brachycarpum and Subass. of typicum. Each community was described in terms of floristic, structural and environmental features.

• 한국전기전자재료학회논문지
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• 제23권5호
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• pp.368-373
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• 2010

In this study, we have investigated the effects of Cr dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;{\varepsilon}^*$, and $tan{\delta}$). Admittance spectra show more than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states in ZnO-$Bi_2O_3-Cr_2O_3$ (ZBCr) system. Three kinds of temperature-dependant activation energies ($E_{bt}'s$) were calculated as 0.11~0.14 eV of attractive coulombic center, 0.16~0.17 eV of $Zn_{\ddot{i}}$, and 0.33 eV of $V_o^{\cdot}$ as dominant bulk defects. The grain boundaries of ZBCr could be electrochemically divided into two types as a sensitive to ambient oxygen i.e. electrically active one and an oxygen-insensitive i.e. electrically inactive one. The grain boundaries were electrically single type under 460 K (equivalent circuit as parallel $R_{gb1}C_{gb1}$) but separated as double one ($R_{gb1}C_{gb1}-R_{gb2}C_{gb2}$) over 480 K. It is revealed that the dielectric functions are very useful tool to separate the overlapped bulk defect levels and to characterize the electrical properties of grain boundaries.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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• pp.265-268
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• 1991

In the study, PPTMDSO(plasma-polymerized tetramethyldisiloxane) films were deposited on on glass substrate in a paralled plate reactor. As the function of RF power increased from 20 W to 110 W, and the substrate temperature increased from $25^{\circ}C$ to $100^{\circ}C$, the deposit ion rate, increased. When oxygen was intentionally added in monomer vapor, the concentration of Si-O-Si bonds increased while C-H, Si-H, -CH3, Si(CH3)x, -CH3, and Si-C bonds decreased in IR spectra. Thermal stability of PPTMSDO film were investigated and weight loss at $800^{\circ}C$ was 7.3 %.

• 한국자기학회지
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• 제13권3호
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• pp.121-126
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• 2003

(N $i_{0.2}$C $u_{0.2}$Z $n_{0.6}$)$_{1.085}$(F $e_2$ $O_3$)$_{0.915}$의 기본 조성에 첨가제 Sn $O_2$, CaO 첨가량과 ferrite의 공정을 변화시켜 시편의 전자기적 특성 및 미세구조를 조사하였다. 첨가제에 따른 입자크기의 변화는 거의 없었다. (N $i_{0.2}$C $u_{0.2}$Z $n_{0.6}$)$_{1.085}$(F $e_2$ $O_3$)$_{0.915}$을 소결시 1300 $^{\circ}C$에서 소결하는 것보다 1150 $^{\circ}C$에서 소결한 소결체의 손실이 더욱 적었다. CaO만 첨가할 때 0.2 wt%가 소결밀도를 크게하여 손실을 줄여주는 첨가제로 사용 가능함을 확인하였다 Sn $O_2$차 Ca $O_2$함께 첨가시 SnO2$_2$ 0.06 wt%, CaO 0.4 wt%가 손실을 크게 줄여 주는 것으로 조사되었다.

• 한국재료학회지
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• 제5권5호
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• pp.583-597
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• 1995

We investigated the effect of the oxygne partial pressure on the phase stability of B $i_{2}$S $r_{2}$Ca C $u_{2}$ $O_{8+x}$ and B $i_{2}$S $r_{2}$C $a_{2}$C $u_{3}$ $O_{10+x}$ at 82$0^{\circ}C$. As the oxygen pressure decreased, B $i_{2}$Sr/sb 2/CaC $u_{2}$ $O_{8+x}$ melted at 2.2$\times$10$^{-3}$ atm $O_{2}$. In the case of the B $i_{1.7}$P $b_{0.4}$S $r_{2}$C $a_{2}$ $O_{10+x}$, it started to decompose into theree phases of B $i_{2}$S $r_{2}$Cu $O_{6+y}$, $Ca_{2}$Cu $O_{3}$ and C $u_{4}$ $O_{3}$ and C $u_{4}$ $O_{3}$ at 8.0$\times$10$^{-3}$ atm $O_{2}$ and was completely decomposed at 4.3$\times$10$^{-3}$ atm $O_{2}$ B $i_{2}$S $r_{2}$C $a_{2}$C $u_{3}$ $O_{10+x}$ phase was not formed by the solid state reaction from the mixutre of $i_{2}$S $r_{2}$CaCu.sub 2/ $O_{8+x}$, $Ca_{2}$Cu $O_{3}$ and CuO down to 2.2$\times$10.sub -3/ atm O.sub 2/ but formed by the solidifciation of the formed from the mixture of the intermediate compounds in the Bi-Sr-Ca-Cu-O system and the fromation temperature of Bi.sub 2/S $r_{2}$C $a_{2}$Cu.$_{3}$ $O_{10+x}$ can be lowered by reducing oxygen partial pressure.e.e.ure.e.e.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• 한국지역지리학회지
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• 제18권3호
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• pp.336-350
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• 2012

본 연구는 보존가치가 있는 금오도 지역의 지형 지질 경관자원에 관한 전문적인 지식을 기반으로 생태 역사 문화적 요소를 포함하여 금오도의 지역성을 경험할 수 있도록 지오싸이트(geosite)를 발굴하고 해설하는 데 초점을 맞추었다. 지형 지질 경관자원으로서 서부 해안에 위치한 '미역널방' 신선대의 해식애, 직포 사빈, '갈바람통'의 해식애와 해식동, 충산의 육계사주와 육계도, 장지 암설 역빈과 동부 해안에 위치한 여천 대유의 응회암, 연목 '검바위' 우학리의 안산암 분포지를 지오싸이트로 선정하였다. 전반적으로 중생대 퇴적층과 화산암으로 이뤄진 지형들이 발달하였다. 탐방경로는 금오도의 북서쪽 함구미 선착장에서 남동쪽 장지 마을로 이어지는 '비렁길'루트와 동부해안도로를 따라 구성하였으며, 암설지대가 나타나는 장지를 사례로 관광해설표지판을 예시해 보았다.

• 한국전자파학회논문지
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• 제15권7호
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• pp.730-735
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• 2004

본 논문에서는 WCDMA단말기 직접변환 수신기에서 DC 오프셋 발생원인과 DC 오프셋에 의한 시스템 성능열화에 대해 언급하고, QPSK(Quadrature Phase Shift Keying)변조 방식에서 DC오프셋 값에 의한 성능 열화를 시뮬레이션을 통해 확률 오류에 대한 $E_{b}/N_{o}$ 값으로 나타내었다. DC 오프셋 제어 회로를 추가한 단말기 직접변환 RF 트랜시버 보드를 구현하여 WCDMA(Wideband Code Division Multiple Access) 테스트 베드를 구축하고, DC 오프셋 변화량에 따른 복조기 수신 성능을 $E_{c}/I_{o}$ 값을 이용하여 평가 및 분석하였다. 분석 및 시스템 시험 결과를 통해 시스템 성능열화 방지를 위한 DC 오프셋 관련 최소 성능 요구규격을 제시하였다.